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Toshiba Semiconductor and Storage RN1109MFV,L3F
- Part No.:
- RN1109MFV,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SOT-723
- Datasheet:
-
RN1109MFV,L3F.pdf
- Description:
- TRANS PREBIAS NPN 50V 0.1A VESM
- Quantity:
- Payment:
- Shipping:
Inventory:6,153
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Product details
Overview
RN1109MFV from Toshiba Electronic Devices & Storage Corporation is a silicon NPN epitaxial bipolar transistor with built-in bias resistors (R1 = 47 kΩ, R2 = 22 kΩ), designed for compact switching and interfacing applications. It operates with VCEO = 50 V, IC = 7 mA maximum, PC = 100 mW, and hFE ≥ 70 at IC = 5 mA, IB = 0.5 mA, and is housed in the ultra-small VESM package.
For engineers reviewing the RN1109MFV datasheet, RN1109MFV pinout, RN1109MFV application, or RN1109MFV equivalent, key selection considerations include its integrated resistor ratio (R1/R2 = 2.14), low VCE(sat) ≤ 0.3 V at IC = 5 mA, VI(ON) ≤ 2.2 V, VI(OFF) ≥ 0.5 V, and suitability for high-density driver circuits requiring minimal external components.
Technical Context
The RN1109MFV implements a PCT-process NPN transistor with monolithically integrated base bias network-R1 connected between base and input, R2 between base and emitter-enabling single-resistor control of turn-on/turn-off thresholds. Its electrical behavior is defined by fixed resistor values (R1 = 47 kΩ, R2 = 22 kΩ) and guaranteed hFE ≥ 70 under standard test conditions (IC = 5 mA, IB = 0.5 mA).
It delivers VCE(sat) ≤ 0.3 V at IC = 5 mA and IB = 0.5 mA, supports VI(ON) up to 2.2 V and VI(OFF) down to 0.5 V, and exhibits Cob ≤ 5.8 pF at VCB = 10 V, f = 1 MHz-making it suitable for low-power digital interface and level-shifting functions where predictable threshold control and fast switching are required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - Maximum collector-emitter voltage before breakdown; defines safe operating range in switching applications. |
| IC max | 7 mA - Absolute maximum continuous collector current; sets upper limit for load-driving capability. |
| hFE min | 70 - Minimum DC current gain at IC = 5 mA, IB = 0.5 mA; ensures reliable transistor action with low drive current. |
| R1 / R2 | 47 kΩ / 22 kΩ - Fixed internal bias resistors; determines input threshold and reduces need for external components. |
| VCE(sat) max | 0.3 V - Maximum saturation voltage at IC = 5 mA, IB = 0.5 mA; minimizes power loss during on-state operation. |
| Cob max | 5.8 pF - Collector-base output capacitance at VCB = 10 V, 1 MHz; impacts high-frequency response and switching speed. |
Pinout & Package
Package: VESM - ultra-small surface-mount package (1.2 × 0.8 × 0.37 mm, 1.5 mg typical weight), optimized for high-density PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal connected internally to R1 and R2; accepts logic-level input for switching control. |
| 2 | Emitter | Reference node for bias network (R2 tied here); typically grounded or connected to low-side return path. |
| 3 | Collector | Output terminal delivering switched current to load; connects to positive rail or active pull-up. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bias network | R1 = 47 kΩ, R2 = 22 kΩ - eliminates two external resistors, reducing BOM count and layout area. |
| Ultra-compact footprint | VESM package (1.2 × 0.8 mm) - enables placement in space-constrained modules like wearables and sensor nodes. |
| PCT process technology | Silicon NPN epitaxial structure - ensures stable hFE and low leakage (ICBO ≤ 0.15 nA) across temperature. |
| Complementary pairing | Matched with RN2109MFV (PNP counterpart) - simplifies push-pull and H-bridge driver design without discrete matching. |
Applications
| LED Driver Circuits | Microcontroller Interface |
|---|---|
Use Scenario: Driving low-current indicator LEDs from 3.3 V or 5 V MCU GPIO pins. IC Role / Device Role / Timing Role: Single-transistor switch with built-in biasing, replacing discrete BJT + two resistors. Use Value: Reduces component count by 2 parts per channel and occupies <1 mm² PCB area in VESM footprint. | Use Scenario: Level translation and signal conditioning between mixed-voltage logic domains (e.g., 1.8 V FPGA to 5 V peripheral). IC Role / Device Role / Timing Role: Digital buffer/switch with defined VI(ON)/VI(OFF) thresholds (2.2 V / 0.5 V). Use Value: Ensures clean logic transitions without external resistor dividers or Schmitt triggers. |
| Inverter Circuits | Low-Power Sensor Signal Switching |
Use Scenario: Compact inverters in battery-powered IoT edge nodes for signal polarity reversal. IC Role / Device Role / Timing Role: Active inverter stage using common-emitter configuration with fixed bias. Use Value: Achieves propagation delay <100 ns and consumes <100 µA quiescent current in off-state. | Use Scenario: Enabling/disabling analog sensor outputs (e.g., thermistors, photodiodes) to minimize standby power. IC Role / Device Role / Timing Role: Low-leakage analog switch controlled by digital enable line. Use Value: ICEO ≤ 0.145 mA and ICBO ≤ 0.15 nA ensure sub-µA off-state current, extending battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bipolar switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RN1108MFV | R1 = 22 kΩ, R2 = 47 kΩ; higher VI(OFF) (0.6 V), lower hFE min (80 vs. 70) | Better noise immunity in noisy environments due to higher turn-off threshold | Select when higher VI(OFF) improves robustness against false triggering |
| EMH11T2R | Same VESM package; R1 = 47 kΩ, R2 = 22 kΩ; hFE min = 60; VCEO = 50 V; PC = 100 mW | Near-identical bias network but slightly lower gain margin | Valid alternative where hFE ≥ 60 suffices and second-source assurance is required |
Compared with RN1108MFV and EMH11T2R, the RN1109MFV offers the highest R1/R2 ratio (2.14) among its family, enabling sharper ON/OFF transition control in marginal-input applications, while maintaining identical thermal and mechanical compatibility with VESM-layout designs.
Availability
RN1109MFV is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller interface modules, and low-power sensor switching applications requiring stable component supply and long-term industrial availability.
Supply support for RN1109MFV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors and power devices, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.
The RN1109MFV belongs to Toshiba's RN11xxMFV bias-resistor-equipped transistor (BRT) product line, engineered specifically for space-constrained digital switching and interfacing in consumer, industrial, and automotive-qualified systems.
FAQ
What is the function of the built-in resistors in RN1109MFV?
The RN1109MFV integrates two precision resistors: R1 (47 kΩ) connects the input to the base, and R2 (22 kΩ) connects the base to the emitter. This configuration forms a self-biasing network that replaces external base resistors, allowing direct connection to logic outputs. It ensures stable turn-on at VI(ON) ≤ 2.2 V and reliable turn-off at VI(OFF) ≥ 0.5 V, simplifying circuit design for the RN1109MFV in digital switching roles.
What is the maximum power dissipation rating for RN1109MFV?
The RN1109MFV has a maximum collector power dissipation (PC) of 100 mW when mounted on a standard FR4 board (25.4 mm × 25.4 mm × 1.6 mm). This rating applies at Ta = 25 °C and must be derated linearly above 25 °C per the datasheet's thermal resistance curve. Exceeding this limit risks junction overheating and long-term reliability degradation in the RN1109MFV.
Is RN1109MFV pin-compatible with other VESM-packaged transistors?
Yes, the RN1109MFV uses the standardized VESM package with fixed 3-pin assignment (1: Base, 2: Emitter, 3: Collector), matching industry-standard footprints for similar small-signal BRTs. This allows direct PCB footprint reuse with parts like RN1107MFV and RN1108MFV, though resistor values and gain differ-so functional compatibility requires verification per circuit requirements for the RN1109MFV.
What is the typical junction-to-ambient thermal resistance (RθJA) for RN1109MFV?
The RN1109MFV does not specify RθJA explicitly in its datasheet, but its absolute maximum ratings assume mounting on a 25.4 mm × 25.4 mm × 1.6 mm FR4 board. Based on package size and construction, typical RθJA is estimated at ~450 °C/W. For accurate thermal design with the RN1109MFV, refer to Toshiba's published thermal simulation data or perform board-specific measurements under actual layout conditions.
Does RN1109MFV meet RoHS and lead-free requirements?
Yes, the RN1109MFV is RoHS-compliant and lead-free, as confirmed by Toshiba's environmental compliance documentation. It adheres to EU Directive 2011/65/EU and subsequent amendments, with homogeneous material analysis verifying Pb content < 0.1 wt%. Full substance declarations and test reports for the RN1109MFV are available upon request from Aetrix Electronics or directly via Toshiba's compliance portal.
RN1109MFV,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOT-723
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 47 kOhms
- Resistor - Emitter Base (R2):
- 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max):
- 500nA
- Frequency - Transition:
- -
- Power - Max:
- 150 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- VESM
RN1109MFV,L3F FAQ
1.How can I place an order for RN1109MFV,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for RN1109MFV,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RN1109MFV,L3F reliable?
The price and inventory of RN1109MFV,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RN1109MFV,L3F is usually 5 days.
3.What payment methods are accepted for RN1109MFV,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RN1109MFV,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RN1109MFV,L3F?
RN1109MFV,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RN1109MFV,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RN1109MFV,L3F?
For technical support, including RN1109MFV,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RN1109MFV,L3F requirements.
6.How does Aetrix verify that RN1109MFV,L3F is sourced from the original manufacturer or authorized distributors?
All RN1109MFV,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RN1109MFV,L3F meets industry standards.
7.What is the process for return or replacement of RN1109MFV,L3F?
All RN1109MFV,L3F units undergo pre-shipment inspection (PSI). If there is an issue with RN1109MFV,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RN1109MFV,L3F part is unused and in its original packaging.
Return procedure for RN1109MFV,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
RN1109MFV,L3F Tags
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MUN5211T1G
onsemi
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DTC043ZEBTL
Rohm Semiconductor
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DTC114EKAT146
Rohm Semiconductor
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DDTD113ZC-7-F
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DRDNB16W-7
Diodes Incorporated
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PDTC114ET,215
Nexperia USA Inc.
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PDTC143ZT,215
Nexperia USA Inc.
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PDTC143ET,215
Nexperia USA Inc.
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PDTC143XT,215
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MMUN2211LT1G
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PDTC124ET,215
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