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Toshiba Semiconductor and Storage RN2305,LF

Part No.:
RN2305,LF
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Single, Pre-Biased Bipolar Transistors
Package:
SC-70, SOT-323
Datasheet:
AetrixRN2305,LF.pdf
Description:
TRANS PREBIAS PNP 50V 0.1A SC70
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:265

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Product details

Overview

RN2305,LF from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial bipolar transistor with integrated bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ), designed for switching and interfacing applications in compact DC-DC converters, LED drivers, and logic-level translators. It operates with VCEO = −50 V, IC = −5 mA max, and hFE = 80 min at IC = −5 mA, IB = −0.25 mA.

For engineers reviewing the RN2305,LF datasheet, RN2305,LF pinout, RN2305,LF application, or RN2305,LF equivalent, this part supports AEC-Q101-qualified automotive subsystems, low-power logic interface circuits, and space-constrained driver stages where resistor-integrated transistors reduce BOM count and PCB footprint.

Technical Context

The RN2305,LF implements a monolithic PNP transistor with two on-die bias resistors forming a fixed-base bias network-R1 connected between base and emitter, R2 between base and collector-enabling single-resistor external drive and stable saturation under varying load conditions. Its USM package supports high-density mounting in portable and automotive control modules.

It shares the same absolute maximum ratings as the RN2301–RN2304 group for VCBO and VCEO (−50 V), but differs in bias resistor values and input voltage thresholds: VI(ON) = −0.6 V typ., VI(OFF) = −1.0 V typ., ensuring reliable turn-on/turn-off margins in 3.3 V and 5 V logic systems.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−50 V: Maximum allowable collector-emitter voltage before breakdown; enables use in 24 V automotive supply rails with margin.
hFE80 min at IC = −5 mA, IB = −0.25 mA: Ensures sufficient current gain for low-drive digital outputs to fully saturate the transistor.
R1 / R22.2 kΩ / 47 kΩ: Fixed internal bias network optimized for fast switching with low input current demand and stable OFF-state leakage.
VCE(sat)−0.6 V max at IC = −5 mA, IB = −0.25 mA: Low saturation voltage minimizes power loss in high-duty-cycle switching applications.
fT15.4 MHz typ.: Supports switching frequencies up to ~1–2 MHz in small-signal amplifier or pulse generator roles.
PackageUSM (SOT-323): 1.3 × 1.7 × 0.9 mm surface-mount package with 6.0 mg mass; compatible with standard reflow profiles and AOI inspection.

Pinout & Package

Package: USM (SOT-323), 3-pin ultra-small molded plastic case with gull-wing leads. Dimensions: 1.3 mm × 1.7 mm × 0.9 mm (L × W × H), weight 6.0 mg (typ.).

Pin/TerminalCircuit RoleDesign Meaning
1BaseInternal connection to both R1 (to emitter) and R2 (to collector); accepts single external drive signal without discrete biasing components.
2EmitterCommon reference terminal; tied to R1 and serves as current sink output node in PNP configuration.
3CollectorMain output terminal; connects internally to R2 and carries switched load current with low saturation voltage.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD22 standards.
Integrated R1/R2 bias networkEliminates two external resistors, reducing component count by ≥2 and PCB area by ~1.5 mm² per device.
Low VI(ON) threshold−0.6 V typical ensures compatibility with 3.3 V CMOS and TTL logic families without level-shifting circuitry.
Complementary pairingDesigned as PNP counterpart to RN1305 series NPN devices, enabling matched push-pull or totem-pole driver designs.

Applications

Automotive Door Module SwitchingIndustrial PLC Input Interface

Use Scenario: Controlling window lift motors and mirror actuators in 12 V vehicle door modules using microcontroller GPIOs.

IC Role / Device Role / Timing Role: PNP switch providing high-side current sinking for relay coils and small solenoids.

Use Value: Integrated R1/R2 eliminates external biasing, enabling direct MCU drive while maintaining AEC-Q101 compliance and thermal stability over −40 °C to +125 °C.

Use Scenario: Converting 24 V industrial field signals into 3.3 V logic-compatible inputs for ARM-based PLC controllers.

IC Role / Device Role / Timing Role: Level translator and current limiter protecting FPGA I/O banks from overvoltage transients.

Use Value: VI(ON) = −0.6 V and VI(OFF) = −1.0 V provide clean 24 V → 3.3 V translation with noise immunity and no external pull-up required.

LED Driver for Smart LightingUSB-C Power Path Control

Use Scenario: Driving RGB LED strings in battery-powered smart bulbs with PWM dimming via low-voltage MCUs.

IC Role / Device Role / Timing Role: Constant-current switch regulating LED anode current in common-cathode topology.

Use Value: VCE(sat) ≤ −0.6 V at −5 mA ensures < 3 mW conduction loss per channel, extending battery life in portable lighting systems.

Use Scenario: Enabling/disabling 5 V USB-C VBUS paths in portable power banks based on system state and fault detection.

IC Role / Device Role / Timing Role: High-side enable switch controlling PMIC-controlled power FET gate drive signals.

Use Value: Fast turn-on (fT = 15.4 MHz) and low input capacitance support sub-microsecond response to fault interrupts without added gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bias-resistor transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
NSV2305LT1GR1 = 2.2 kΩ, R2 = 47 kΩ, same USM package, but hFE = 60–120 (vs. RN2305,LF min 80), fT = 10 MHz typ.Lower fT limits use in >500 kHz PWM; tighter hFE binning supports analog gain-critical designs.Select when tighter hFE distribution or ON-semiconductor's extended automotive qualification (AEC-Q101 Rev. D) is prioritized.
DXT3051P-7R1 = 2.2 kΩ, R2 = 47 kΩ, SOT-323 package, but VCEO = −40 V (vs. −50 V), IC = −100 mA max (vs. −5 mA).Higher current rating suits higher-power loads, but reduced voltage margin restricts use in 24 V+ systems.Select when driving >50 mA loads is required and system voltage remains ≤ 18 V nominal.

Compared with NSV2305LT1G and DXT3051P-7, the RN2305,LF delivers superior voltage margin (−50 V VCEO), guaranteed minimum hFE (80), and tighter VI(ON)/VI(OFF) specs-making it optimal for safety-critical 24 V automotive interfaces where consistent turn-on behavior across temperature is essential.

Availability

RN2305,LF is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor interfaces, and portable LED lighting systems requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.

Supply support for RN2305,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer reliability standards.

The RN2305,LF belongs to Toshiba's RN23xx family of bias-resistor built-in transistors (BRTs), engineered specifically for reducing external component count in logic-level switching and interface circuits across automotive and industrial control applications.

FAQ

What is the maximum operating junction temperature for RN2305,LF?

The RN2305,LF has a maximum junction temperature (Tj) rating of 150 °C, as specified in Toshiba's Absolute Maximum Ratings table. This allows continuous operation in under-hood automotive environments and industrial enclosures with adequate board-level thermal design. Derating guidelines in the Toshiba Semiconductor Reliability Handbook should be applied when ambient temperatures exceed 85 °C or power dissipation exceeds 50 mW.

Is RN2305,LF RoHS compliant and lead-free?

Yes, RN2305,LF is RoHS compliant and lead-free, as confirmed by Toshiba's product documentation and marking specifications. The ",LF" suffix explicitly denotes lead-free plating and halogen-free molding compound. Full compliance data-including substance declarations and test reports-is available through Toshiba's environmental portal and authorized distributors like Digi-Key and Mouser.

Does RN2305,LF require external bias resistors for basic switching operation?

No, RN2305,LF does not require external bias resistors for basic switching operation. It integrates R1 = 2.2 kΩ and R2 = 47 kΩ internally, enabling direct connection of a single control signal to the base (Pin 1) while emitter (Pin 2) and collector (Pin 3) interface with the load. This eliminates two external resistors and simplifies layout in space-constrained designs.

What is the typical transition frequency (fT) of RN2305,LF and how does it affect switching speed?

The typical transition frequency (fT) of RN2305,LF is 15.4 MHz, measured at VCE = −10 V, IC = −5 mA. This fT supports rise/fall times under 25 ns in optimized layouts, making the RN2305,LF suitable for PWM dimming up to 2 MHz and digital signal buffering in sub-100 ns timing-critical paths.

How does RN2305,LF differ from RN2301,LF in terms of bias resistor values and application suitability?

RN2305,LF uses R1 = 2.2 kΩ and R2 = 47 kΩ, whereas RN2301,LF uses R1 = R2 = 4.7 kΩ. This makes RN2305,LF better suited for low-input-current drive scenarios (e.g., weak GPIOs or high-impedance sources) and applications requiring deeper saturation at lower base currents, such as battery-powered logic interfaces. RN2301,LF offers faster switching in moderate-load, higher-drive applications.

RN2305,LF Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
2.2 kOhms
Resistor - Emitter Base (R2):
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
200 MHz
Power - Max:
100 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-70

RN2305,LF FAQ

1.How can I place an order for RN2305,LF through Aetrix?

Please submit a Request for Quotation (RFQ) for RN2305,LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RN2305,LF reliable?

The price and inventory of RN2305,LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RN2305,LF is usually 5 days.

3.What payment methods are accepted for RN2305,LF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RN2305,LF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RN2305,LF?

RN2305,LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RN2305,LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RN2305,LF?

For technical support, including RN2305,LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RN2305,LF requirements.

6.How does Aetrix verify that RN2305,LF is sourced from the original manufacturer or authorized distributors?

All RN2305,LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RN2305,LF meets industry standards.

7.What is the process for return or replacement of RN2305,LF?

All RN2305,LF units undergo pre-shipment inspection (PSI). If there is an issue with RN2305,LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RN2305,LF part is unused and in its original packaging.

Return procedure for RN2305,LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RN2305,LF Tags

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