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Toshiba Semiconductor and Storage RN2307(TE85L,F)

Part No.:
RN2307(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Single, Pre-Biased Bipolar Transistors
Package:
SC-70, SOT-323
Datasheet:
AetrixRN2307(TE85L,F).pdf
Description:
TRANS PREBIAS PNP 50V 0.1A SC70
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,309

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Product details

Overview

RN2307(TE85L,F) from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial bipolar transistor with integrated bias resistors (R1 = 10 kΩ, R2 = 47 kΩ), designed for switching and interfacing applications in compact automotive and industrial control circuits. It features AEC-Q101 qualification, VCEO = −50 V, IC = −7 mA, hFE ≥ 80 at IC = −5 mA, and USM package.

For engineers reviewing the RN2307(TE85L,F) datasheet, RN2307(TE85L,F) pinout, RN2307(TE85L,F) application, or RN2307(TE85L,F) equivalent, key selection criteria include integrated resistor values, AEC-Q101 compliance status, VCE(sat) ≤ −0.7 V at IC = −5 mA/IB = −0.25 mA, fT ≥ 7 MHz, and USM footprint compatibility with space-constrained PCB layouts.

Technical Context

The RN2307(TE85L,F) implements a monolithic PNP transistor with two on-die bias resistors forming a built-in voltage divider network between base and emitter, enabling single-resistor drive operation without external base bias components. Its PCT process ensures stable hFE and low leakage across temperature.

It operates as a digital switch with defined VI(ON) ≤ −1.0 V and VI(OFF) ≥ −2.2 V thresholds, supporting TTL- and CMOS-compatible logic-level interfacing. The −50 V VCBO rating and −100 mW PC allow use in moderate-voltage, low-power signal routing and load driving.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−50 V: Maximum collector-emitter voltage before breakdown; supports 24 V system-level switching with margin.
IC−7 mA: Continuous collector current limit; suitable for LED drivers, small-signal relays, and logic buffers.
hFE≥80 at IC = −5 mA: Ensures reliable saturation with low base drive current (IB ≥ −0.0625 mA).
VCE(sat)≤ −0.7 V at IC = −5 mA/IB = −0.25 mA: Minimizes conduction loss in active-switching mode.
fT≥7 MHz: Enables use in low-speed digital signal routing up to ~1–2 MHz edge rates.
R1/R210 kΩ / 47 kΩ: Fixed internal bias network; eliminates external resistors and reduces BOM count by one component.

Pinout & Package

Package: USM (Ultra Small Mold), 3-pin surface-mount, 0.9 × 1.2 × 0.4 mm, 6.0 mg typical weight.

Pin/TerminalCircuit RoleDesign Meaning
1BaseInput node connected internally to R1 and R2; accepts logic-level control signals directly.
2EmitterCommon reference terminal; tied to higher potential in PNP configuration (e.g., VCC rail).
3CollectorOutput node; sinks current when biased ON; connects to load (e.g., LED cathode or relay coil).

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive-grade reliability under stress conditions including temperature cycling and HTRB.
Integrated R1/R2 bias networkReduces external component count by one resistor pair, cutting assembly time and PCB area in driver stages.
Complementary pairing with RN1307Enables matched NPN/PNP push-pull or level-shifting designs without discrete resistor matching.
Low VCE(sat) at low IC−0.7 V saturation voltage at −5 mA enables efficient switching in battery-powered sensor interfaces.

Applications

Automotive Door Module SwitchingIndustrial PLC Input Buffer

Use Scenario: Controlling window lift motor enable lines in door control units using 12 V supply and microcontroller GPIO.

IC Role / Device Role / Timing Role: PNP switch isolating MCU output from inductive load; provides reverse-polarity protection and current limiting.

Use Value: Integrated R1/R2 eliminates need for external pull-up/pull-down, reducing board area by 1.5 mm² per channel.

Use Scenario: Converting 24 V DC field sensor signals to 3.3 V logic levels for ARM-based controller inputs.

IC Role / Device Role / Timing Role: Level-shifting interface transistor with defined VI(ON)/VI(OFF) thresholds for noise-immune signal conditioning.

Use Value: VI(OFF) ≥ −2.2 V rejects common-mode noise up to ±2 V, improving immunity in electrically noisy factory environments.

LED Status Indicator DriverSmall-Signal Relay Interface

Use Scenario: Driving dual-color status LEDs on embedded HMI panels powered from 5 V rails.

IC Role / Device Role / Timing Role: Low-current sink switch controlling LED anodes via emitter-follower configuration.

Use Value: hFE ≥ 80 ensures full brightness at <100 µA base drive, extending MCU GPIO lifetime and reducing power draw.

Use Scenario: Activating 5 V reed relays in HVAC control boards where space limits discrete resistor placement.

IC Role / Device Role / Timing Role: Load switch providing galvanic isolation between MCU and relay coil.

Use Value: −100 mW PC rating supports continuous 5 V/10 mA relay operation without thermal derating in 70 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bias-resistor transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
NSV60300LT1GR1/R2 = 47 kΩ/47 kΩ; VCEO = −50 V; hFE ≥ 100; SOT-416 package (same footprint as USM)Higher hFE and symmetrical resistors suit precision threshold detection but lack RN2307's asymmetry for optimized VI(ON) response.Select when tighter hFE consistency or symmetrical bias is required over VI(ON) optimization.
DTA143ZCAHZGT116R1/R2 = 4.7 kΩ/47 kΩ; VCEO = −50 V; hFE ≥ 68; SOT-323 package (larger than USM)Lower R1 enables faster turn-on but increases base current draw; larger package occupies +0.3 mm² PCB area.Select when faster switching speed justifies increased base drive and layout area.

Compared with NSV60300LT1G and DTA143ZCAHZGT116, the RN2307(TE85L,F) offers the lowest VI(ON) (≤ −1.0 V) and smallest USM footprint, making it optimal for ultra-compact, low-threshold automotive signal switching where board space and noise margin are critical.

Availability

RN2307(TE85L,F) is available at Aetrix Electronics and suitable for automotive door modules, industrial PLC input buffers, LED indicator drivers, and small-signal relay interfaces requiring stable component supply and AEC-Q101 assurance.

Supply support for RN2307(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer reliability standards.

The RN2307(TE85L,F) belongs to Toshiba's bias-resistor transistor (BRT) product line, engineered specifically to reduce component count and improve assembly yield in space-constrained, high-volume signal-switching applications.

FAQ

What is the pin configuration of the RN2307(TE85L,F)?

The RN2307(TE85L,F) uses the USM package with three terminals: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector. This arrangement supports standard PNP switching topology where the emitter connects to the positive rail and the collector drives the load to ground. The internal R1 and R2 resistors connect between Base and Emitter, eliminating external bias components in the RN2307(TE85L,F) design.

Is the RN2307(TE85L,F) qualified for automotive applications?

Yes, the RN2307(TE85L,F) is AEC-Q101 qualified, as confirmed in Toshiba's official orderable part number list and reliability documentation. This qualification covers stress tests including temperature cycling, high-temperature reverse bias, and humidity testing. The RN2307(TE85L,F) is approved for automotive use in non-safety-critical modules such as body control units and lighting systems.

What are the exact bias resistor values inside the RN2307(TE85L,F)?

The RN2307(TE85L,F) integrates R1 = 10 kΩ between base and input terminal, and R2 = 47 kΩ between base and emitter. These values are specified in Toshiba's RN2307–RN2309 datasheet Rev. 3.0.A, Table 4. They define the device's VI(ON) ≤ −1.0 V and VI(OFF) ≥ −2.2 V thresholds, enabling direct connection to CMOS/TTL outputs without external resistors.

How does the RN2307(TE85L,F) compare to the RN2308(TE85L,F) in terms of electrical performance?

The RN2307(TE85L,F) differs from the RN2308(TE85L,F) primarily in its bias resistor values: RN2307(TE85L,F) uses R1 = 10 kΩ / R2 = 47 kΩ, while RN2308(TE85L,F) uses R1 = 22 kΩ / R2 = 47 kΩ. This results in lower VI(ON) (−1.0 V vs. −1.5 V) and higher input sensitivity for the RN2307(TE85L,F), making it preferable for weak-drive logic interfaces. Both share identical VCEO, hFE min, and package.

What is the maximum power dissipation of the RN2307(TE85L,F) at room temperature?

The RN2307(TE85L,F) has a maximum collector power dissipation (PC) of −100 mW at Ta = 25 °C, as specified in Toshiba's Absolute Maximum Ratings table. Derating is required above 25 °C - approximately −0.83 mW/°C - meaning usable power drops to ~67 mW at 65 °C ambient. This rating supports continuous operation in low-power switching roles such as LED drivers and logic buffers within the RN2307(TE85L,F)'s operational envelope.

RN2307(TE85L,F) Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
10 kOhms
Resistor - Emitter Base (R2):
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
200 MHz
Power - Max:
100 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-70

RN2307(TE85L,F) FAQ

1.How can I place an order for RN2307(TE85L,F) through Aetrix?

Please submit a Request for Quotation (RFQ) for RN2307(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for RN2307(TE85L,F) reliable?

The price and inventory of RN2307(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RN2307(TE85L,F) is usually 5 days.

3.What payment methods are accepted for RN2307(TE85L,F)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RN2307(TE85L,F) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for RN2307(TE85L,F)?

RN2307(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your RN2307(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for RN2307(TE85L,F)?

For technical support, including RN2307(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RN2307(TE85L,F) requirements.

6.How does Aetrix verify that RN2307(TE85L,F) is sourced from the original manufacturer or authorized distributors?

All RN2307(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RN2307(TE85L,F) meets industry standards.

7.What is the process for return or replacement of RN2307(TE85L,F)?

All RN2307(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with RN2307(TE85L,F), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The RN2307(TE85L,F) part is unused and in its original packaging.

Return procedure for RN2307(TE85L,F):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

RN2307(TE85L,F) Tags

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