Toshiba Semiconductor and Storage RN2308,LF

Overview

RN2308,LF from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial bipolar transistor with built-in bias resistors (R1 = 22 kΩ, R2 = 47 kΩ), designed for switching and interfacing in compact low-power circuits. It features VCEO = −50 V, IC = −100 mA, hFE = 80 (min), VCE(sat) = −0.7 V (max at IC = −5 mA, IB = −0.25 mA), and operates in USM package. It is AEC-Q101 qualified for automotive use.

For engineers reviewing the RN2308,LF datasheet, RN2308,LF pinout, RN2308,LF application, or RN2308,LF equivalent, key selection criteria include integrated resistor values, saturation voltage under defined drive conditions, DC current gain at −5 mA collector current, thermal limits (Tj = 150 °C), and compatibility with PNP BRT-based logic-level interface designs.

Technical Context

The RN2308,LF implements a monolithic PNP transistor with two laser-trimmed on-chip resistors forming a fixed-base-bias network. Its internal R1–R2 configuration enables direct connection to digital logic outputs without external pull-up/down components.

It operates as a single-stage saturated switch with guaranteed hFE ≥ 80 at IC = −5 mA and IB = −0.25 mA, and exhibits VI(ON) ≤ −1.0 V and VI(OFF) ≥ −2.2 V - enabling reliable turn-on/turn-off control from 3.3 V or 5 V CMOS/TTL sources.

Key Specifications

Pinout & Package

Package: USM (Ultra Small Mold), SOT-323, 3-pin surface-mount package; dimensions 2.0 × 2.1 × 0.9 mm (L × W × H); weight 6.0 mg (typical).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bias-resistor transistor applications.

Compared with NSV2308LT1G and DTA124EUBTL, the RN2308,LF delivers higher guaranteed hFE and automotive qualification - making it the preferred choice for reliability-critical, low-drive, and thermally demanding implementations where consistent saturation and long-term stability are required.

Availability

RN2308,LF is available at Aetrix Electronics and suitable for automotive lighting control, industrial PLC output stages, consumer appliance backlight management, and IoT sensor node power switching requiring stable component supply and long lifecycle support.

Supply support for RN2308,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and discrete components for automotive, industrial, and consumer markets.

The RN2307 to RN2309 series was developed to provide AEC-Q101-qualified, space-saving PNP BRTs for automotive body electronics and industrial control systems requiring simplified, reliable switching with minimal external components.

FAQ

What is the maximum collector-emitter voltage rating for RN2308,LF?

The RN2308,LF has a maximum collector-emitter voltage (VCEO) rating of −50 V. This specification defines the highest reverse voltage that can be applied between collector and emitter while keeping the base open, ensuring safe operation in 24 V and 48 V automotive and industrial systems. Exceeding this value risks avalanche breakdown and permanent damage to the RN2308,LF.

Does RN2308,LF require external bias resistors for basic switching operation?

No, the RN2308,LF does not require external bias resistors. It integrates R1 = 22 kΩ and R2 = 47 kΩ internally, forming a complete base bias network. This allows direct connection to logic-level inputs such as MCU GPIO pins, eliminating two discrete resistors and simplifying layout. The internal resistors are laser-trimmed for consistency, and their values are confirmed in the official RN2308,LF datasheet.

Is RN2308,LF qualified for automotive applications?

Yes, RN2308,LF is AEC-Q101 qualified, as explicitly stated in the Toshiba orderable part number table and product documentation. This qualification covers stress tests including temperature cycling, highly accelerated life testing (HALT), and electrostatic discharge (ESD) immunity. The RN2308,LF is approved for automotive use cases such as interior lighting control and body electronics - provided design guidelines in the Toshiba Semiconductor Reliability Handbook are followed.

What is the typical transition frequency (fT) of RN2308,LF and its practical implication?

The typical transition frequency (fT) of RN2308,LF is 15.4 MHz. This indicates the frequency at which current gain drops to unity under specified test conditions (VCB = −10 V, IE = 0 mA, f = 1 MHz). In practice, this supports reliable switching up to ~1–2 MHz - sufficient for PWM dimming of LEDs, digital signal buffering, and moderate-speed logic interfacing, but not intended for RF or high-frequency amplifier applications.

How does the saturation voltage VCE(sat) of RN2308,LF affect power dissipation in a 5 mA load application?

At IC = −5 mA and IB = −0.25 mA, the RN2308,LF guarantees VCE(sat) ≤ −0.7 V. Power dissipation in saturation is calculated as |VCE(sat) × IC| = 0.7 V × 5 mA = 3.5 mW. This low dissipation enables use in thermally constrained spaces and supports high-density layouts without forced cooling - a key advantage of the RN2308,LF over standard transistors requiring higher base drive and exhibiting higher VCE(sat).