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Toshiba Semiconductor and Storage RN2313(TE85L,F)
- Part No.:
- RN2313(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SC-70, SOT-323
- Datasheet:
-
RN2313(TE85L,F).pdf
- Description:
- TRANS PREBIAS PNP 50V 0.1A SC70
- Quantity:
- Payment:
- Shipping:
Inventory:5,824
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Product details
Overview
RN2313(TE85L,F) from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial transistor with integrated bias resistors, designed for switching and interface applications in compact DC-DC converters, LED drivers, and logic-level translation circuits. It features VCEO = −50 V, IC = −100 mA, hFE = 120–400, R1 = 32.9–61.1 kΩ, and operates up to 150°C junction temperature.
For engineers reviewing the RN2313(TE85L,F) datasheet, RN2313(TE85L,F) pinout, RN2313(TE85L,F) application, or RN2313(TE85L,F) equivalent, key selection criteria include built-in resistor tolerance (±15%), saturation voltage (−0.1 to −0.3 V), transition frequency (200 MHz typ.), SC-70 package compatibility, and complementary pairing with RN1313.
Technical Context
This PNP digital transistor integrates two on-die resistors (R1 and R2) forming a single-input inverter switch with fixed base biasing. Its PCT process ensures stable hFE across temperature and consistent VCE(sat) under −5 mA/−0.25 mA drive conditions.
The device supports high-speed switching up to 200 MHz (fT) while maintaining low Cob (3–6 pF) and tight leakage control (ICBO ≤ −100 nA at −50 V). It is optimized for low-voltage, low-power interface roles where discrete resistor networks would increase board area and assembly cost.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum safe collector-emitter reverse voltage before breakdown in switching mode |
| IC | −100 mA: Continuous collector current rating defining load-driving capability |
| hFE | 120–400: DC current gain range enabling predictable switching thresholds across production lots |
| R1 | 32.9–61.1 kΩ: Integrated input resistor value determining base current and logic-level compatibility |
| VCE(sat) | −0.1 to −0.3 V: Low saturation voltage minimizing conduction loss in power-efficient switching |
| fT | 200 MHz (typ.): Transition frequency supporting reliable operation in high-speed digital interfaces |
| Cob | 3–6 pF: Collector-base capacitance affecting switching speed and noise immunity in RF-adjacent layouts |
Pinout & Package
Package: SC-70 (TOSHIBA 2-2E1A), surface-mount, 3-terminal plastic package weighing 0.006 g (typ.).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter (E) | Current sink terminal | Connected to ground or low-side reference; defines polarity and current direction in PNP configuration |
| Base (B) | Control input node | Internally connected to R1 and R2; accepts TTL/CMOS-compatible logic signals without external bias network |
| Collector (C) | Switched output terminal | Drives loads referenced to positive supply; configured as common-emitter switch in standard applications |
Key Features
| Feature | Design Value |
|---|---|
| Built-in bias resistors | Eliminates need for two external resistors, reducing BOM count and PCB footprint by ≥3 components per switch |
| Complementary pairing | Designed as PNP counterpart to NPN RN1313, enabling matched push-pull or inverter stages |
| High fT / low Cob | 200 MHz fT with only 3–6 pF Cob enables clean edge transitions in >10 MHz digital signal routing |
| JEITA-compliant SC-70 | Standardized 2-2E1A footprint ensures compatibility with automated SMT placement and reflow profiles |
| 150°C junction rating | Supports operation in thermally constrained environments such as enclosed power modules or automotive under-hood ECUs |
Applications
| LED Driver Circuit | Logic-Level Translator |
|---|---|
Use Scenario: Driving 20 mA indicator LEDs from 3.3 V microcontroller GPIO pins with minimal external components. IC Role / Device Role / Timing Role: PNP switch controlling LED anode connection to VCC; acts as active-high level shifter. Use Value: Built-in R1/R2 enable direct GPIO interfacing without pull-up/pull-down resistors, reducing layout area by 2.1 mm² per channel. | Use Scenario: Translating 1.8 V I²C signals to 5 V bus levels in mixed-voltage sensor subsystems. IC Role / Device Role / Timing Role: Bidirectional level-shifting element in open-drain configuration with controlled rise/fall times. Use Value: Low VCE(sat) (−0.1 V) and 200 MHz fT preserve signal integrity up to 400 kHz I²C clock rates without added delay. |
| DC-DC Converter Enable | Microcontroller Peripheral Interface |
Use Scenario: Enabling/disabling buck converter ICs via microcontroller output in portable battery-powered devices. IC Role / Device Role / Timing Role: High-side enable switch isolating converter IC's EN pin from MCU rail during sleep states. Use Value: −50 V VCEO rating provides margin against voltage spikes during converter startup/shutdown transients. | Use Scenario: Isolating legacy 5 V peripherals (e.g., UART transceivers) from modern 3.3 V microcontrollers. IC Role / Device Role / Timing Role: Single-transistor interface buffer preventing back-drive damage and ensuring logic compatibility. Use Value: hFE range (120–400) guarantees reliable turn-on with ≤0.25 mA base drive, compatible with most MCU GPIO current limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSV1313MUT1G | R1 = 47 kΩ (fixed), VCEO = −50 V, hFE = 100–300, SC-70 package | Narrower hFE range and no R1 tolerance spec; lower fT (100 MHz) | Acceptable where tighter hFE consistency is prioritized over speed; verify Cob impact in fast-switching layouts |
| EMH12T2R | R1 = 47 kΩ (typ.), VCEO = −50 V, hFE = 82–250, SOT-323 package | Different footprint (SOT-323 vs SC-70); slightly lower max hFE and no fT spec | Use only if SC-70 footprint is not required; requires PCB redesign due to different land pattern and thermal pad |
Compared with RN2313(TE85L,F), NSV1313MUT1G offers tighter R1 tolerance but reduced bandwidth, while EMH12T2R trades package compatibility for broader availability-neither is pin-compatible, and both require validation of switching timing and thermal performance in target layouts.
Availability
RN2313(TE85L,F) is available at Aetrix Electronics and suitable for LED driver circuits, logic-level translation, DC-DC converter enable functions, and microcontroller peripheral interfaces requiring stable component supply and long-term industrial availability.
Supply support for RN2313(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, miniaturization, and energy efficiency.
RN2313(TE85L,F) belongs to Toshiba's RN-series digital transistor family, engineered specifically to replace discrete BJT + resistor combinations in space-constrained consumer, industrial, and automotive interface applications.
FAQ
What is the exact package type and footprint for RN2313(TE85L,F)?
RN2313(TE85L,F) uses the JEITA-standard SC-70 package, designated by Toshiba as 2-2E1A. It is a 3-pin surface-mount device with 0.65 mm pin pitch and 2.0 × 1.25 mm body dimensions. The marking "RN2313" appears on the top surface, and the device weighs 0.006 g (typical). This footprint is not interchangeable with SOT-323 or SOT-23 without PCB revision.
Does RN2313(TE85L,F) have a specified R1 tolerance, and how does it affect circuit design?
Yes, RN2313(TE85L,F) specifies R1 as 32.9–61.1 kΩ, indicating a ±15% tolerance band. This directly impacts base current calculation and switching threshold predictability. Designers must verify worst-case turn-on/off behavior across this range-especially in low-current drive scenarios-and may need hFE derating margins when using minimum R1 values.
Is RN2313(TE85L,F) RoHS compliant and lead-free?
Yes, RN2313(TE85L,F) is RoHS compliant and lead-free per Toshiba's environmental documentation. It meets EU Directive 2011/65/EU requirements and contains no intentionally added lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE. Full compliance data is available in Toshiba's official product environmental reports.
Can RN2313(TE85L,F) be used as a direct replacement for RN2312 in existing designs?
No-RN2313(TE85L,F) is not a drop-in replacement for RN2312. While both share the same SC-70 package and absolute ratings, RN2313 has higher R1 (32.9–61.1 kΩ vs. 15.4–28.6 kΩ), resulting in ~2× lower base current. Substituting without recalculating drive conditions may cause slow turn-on or incomplete saturation in high-speed or high-load applications.
What is the maximum operating frequency supported by RN2313(TE85L,F) in switching applications?
RN2313(TE85L,F) has a typical transition frequency (fT) of 200 MHz, but its practical maximum switching frequency depends on load, drive strength, and layout. In standard 5 mA/0.25 mA test conditions, it reliably switches at ≤10 MHz with <10% duty-cycle distortion. For >1 MHz operation, designers must minimize trace inductance and ensure adequate base drive slew rate to avoid storage-time delays.
RN2313(TE85L,F) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Cut Tape (CT)
- Product Status:
- Active
- Transistor Type:
- PNP - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 47 kOhms
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- Frequency - Transition:
- 200 MHz
- Power - Max:
- 100 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70
RN2313(TE85L,F) FAQ
1.How can I place an order for RN2313(TE85L,F) through Aetrix?
Please submit a Request for Quotation (RFQ) for RN2313(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for RN2313(TE85L,F) reliable?
The price and inventory of RN2313(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for RN2313(TE85L,F) is usually 5 days.
3.What payment methods are accepted for RN2313(TE85L,F)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for RN2313(TE85L,F) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for RN2313(TE85L,F)?
RN2313(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your RN2313(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for RN2313(TE85L,F)?
For technical support, including RN2313(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your RN2313(TE85L,F) requirements.
6.How does Aetrix verify that RN2313(TE85L,F) is sourced from the original manufacturer or authorized distributors?
All RN2313(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that RN2313(TE85L,F) meets industry standards.
7.What is the process for return or replacement of RN2313(TE85L,F)?
All RN2313(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with RN2313(TE85L,F), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The RN2313(TE85L,F) part is unused and in its original packaging.
Return procedure for RN2313(TE85L,F):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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