Infineon Technologies S25FL064LABMFM001

Overview

S25FL064LABMFM001 from Infineon is a 64 Mb (8 MB) serial NOR flash memory IC using 65-nm floating gate technology, operating from 2.7 V to 3.6 V, supporting SPI multi-I/O (SIO/DIO/QIO/QPI), DDR read modes, and uniform 4 KB/32 KB/64 KB erase sectors. It enables XIP execution and code shadowing in space-constrained embedded systems such as industrial controllers and automotive infotainment head units.

For engineers reviewing the S25FL064LABMFM001 datasheet, S25FL064LABMFM001 pinout, S25FL064LABMFM001 application, or S25FL064LABMFM001 equivalent, key selection criteria include Quad I/O read bandwidth up to 54 MBps, 100,000 program-erase cycles, 20-year data retention, industrial temperature grade (–40°C to +85°C), and SOIC-16 package compatibility with legacy S25FL-A/S25FL1-K families.

Technical Context

The S25FL064LABMFM001 implements a serial peripheral interface with configurable clock polarity/phase (modes 0 and 3), supports both SDR and DDR command protocols for QIO and QPI, and uses Serial Flash Discoverable Parameters (SFDP) for automatic configuration. Its architecture includes a 256-byte page programming buffer and supports suspend/resume during program and erase operations.

It features four dedicated 256-byte Security Regions outside the main array, with non-volatile pointer region control, volatile individual sector lock, and power supply lock-down or password protection for Security Regions 2 and 3. Erase granularity is uniform across 4 KB sectors, 32 KB half-blocks, and 64 KB blocks.

Key Specifications

Pinout & Package

Package: 16-lead SOIC 300 mil (SO3016), Pb-free, RoHS-compliant, body size 10.16 mm × 7.49 mm × 2.34 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial NOR flash applications.

Compared with S25FL064LABMFM001, the S25FL128SAGMFI001 offers scalable capacity with identical interface behavior, while the MX25L6433FZNI-10G sacrifices QPI/DDR capability for lower unit cost-making it suitable only where high-speed serial access is not critical.

Availability

S25FL064LABMFM001 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ADAS boot memory, and medical imaging UI storage requiring stable component supply across extended product lifecycles.

Supply support for S25FL064LABMFM001 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and non-volatile memory solutions, with global R&D and manufacturing infrastructure.

The FL-L family targets high-reliability embedded systems needing SPI flash with enhanced bandwidth, security, and endurance-designed specifically for automotive, industrial, and medical applications demanding AEC-Q100 or extended temperature operation.

FAQ

Is S25FL064LABMFM001 pin-compatible with earlier S25FL-A series devices?

Yes, it is footprint-compatible with S25FL-A, S25FL1-K, S25FL-P, S25FL-S, and S25FS-S families in SOIC-16 packages. Pin assignments, voltage levels, and basic SPI command sets match, enabling drop-in replacement where QPI/DDR features are not utilized. However, new security and pointer region registers require updated driver initialization.

What is the maximum clock frequency supported in QPI DDR mode?

The S25FL064LABMFM001 supports DDR Quad Read at up to 54 MHz, delivering 54 MBps effective throughput. This is specified in Table 2 of the datasheet and requires proper PCB layout for signal integrity, including matched trace lengths and controlled impedance routing for all four I/O lines and SCK.

Does this device support hardware write protection for specific memory regions?

Yes, it provides multiple hardware-based protection mechanisms: WP# pin locks top/bottom sectors, Status Register Protect bits (SRP1/SRP0) enable volatile/non-volatile register locking, and four dedicated Security Regions support password-protected, power-supply lock-down, or permanent protection independent of main array contents.

Can the device operate in deep power-down mode while retaining stored data?

Yes, deep power-down mode draws only 2 µA typical current and preserves all stored data. Exit requires CS# deassertion followed by a WAKE-UP command (0xAB); data retention remains guaranteed for 20 years at industrial temperature range, unaffected by power state transitions.