Infineon Technologies S25FL064LABNFB011

Overview

S25FL064LABNFB011 from Infineon is a 64 Mb (8 MB) serial NOR flash memory IC using 65-nm floating gate technology, operating from 2.7 V to 3.6 V, supporting SPI multi-I/O (SIO/DIO/QIO/QPI), DDR read modes, and uniform 4 KB/32 KB/64 KB erase sectors. It enables XIP execution and code shadowing in space-constrained embedded systems such as industrial controllers and automotive infotainment head units.

For engineers reviewing the S25FL064LABNFB011 datasheet, S25FL064LABNFB011 pinout, S25FL064LABNFB011 application, or S25FL064LABNFB011 equivalent, key selection criteria include Quad I/O read bandwidth up to 54 MBps, 100,000 program-erase cycles, 20-year data retention, industrial temperature grade (–40°C to +85°C), and BGA-24 6 × 8 mm package with FAB024 footprint.

Technical Context

The S25FL064LABNFB011 implements a serial flash architecture with configurable addressing (24-/32-bit), SFDP-compliant parameter discovery, and dual-mode SPI clock polarity/phase (CPOL=0/1, CPHA=0/1). Its command set supports suspend/resume for both program and erase operations, enabling real-time system responsiveness during background memory updates.

It integrates four 256-byte Security Regions outside the main array, with non-volatile pointer region control, volatile individual sector lock, and power supply lock-down or password protection for Regions 2 and 3 - delivering hardware-enforced isolation for firmware update partitions and secure boot assets.

Key Specifications

Pinout & Package

Package: BGA-24, 6 × 8 mm, FAB024 footprint (5 × 5 ball array), Pb-free, industrial temperature grade (–40°C to +85°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial NOR flash memory applications.

Compared with S25FL064LABNFB011, the S25FL128SAGMFV000 offers scalable capacity within identical architecture, while the MX25L6433FZNI-10G trades security, DDR, and package size for lower cost and simpler integration - making it suitable only for non-critical, volume-driven designs.

Availability

S25FL064LABNFB011 is available at Aetrix Electronics and suitable for industrial PLCs, automotive ADAS modules, medical imaging devices, and smart energy meters requiring stable component supply, long-term lifecycle assurance, and qualified BGA packaging.

Supply support for S25FL064LABNFB011 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for industrial, automotive, and IoT applications.

The FL-L flash product line delivers high-performance, secure serial NOR memory optimized for code execution, firmware updates, and trusted storage in safety- and reliability-critical systems.

FAQ

Is S25FL064LABNFB011 pin-compatible with earlier S25FL-A series devices?

No. While command-set and footprint are compatible with S25FL-P/S25FL-S/S25FS-S families, S25FL064LABNFB011 uses a BGA-24 package (FAB024), whereas most S25FL-A devices use SOIC-8 or USON packages. Physical pin mapping differs entirely due to package type and I/O count expansion.

Does this device support execute-in-place (XIP) mode with cache coherency?

Yes. The device supports continuous burst read and wrap modes required for XIP operation. Cache coherency depends on host processor implementation - the flash itself provides deterministic read latency and supports QPI/DDR modes to minimize bus contention during instruction fetch.

What is the purpose of the "Pointer Region" in the Security Regions architecture?

The Pointer Region is a non-volatile 256-byte area that stores start/end addresses defining protected ranges within the main flash array. It enables dynamic, firmware-controlled locking of arbitrary sector groups without modifying status registers or requiring full chip reprogramming.

Can the deep power-down mode be exited using only the CS# signal?

No. Deep power-down exit requires both CS# deassertion and a specific 0xAB command issued on the SPI bus. This two-step wake-up prevents spurious exits due to noise on CS#, ensuring reliable low-power state management in battery-operated systems.