Infineon Technologies S25FL512SAGBHB213

Overview

S25FL512SAGBHB213 from Infineon is a 512 Mb (64 MB) serial NOR flash memory with SPI Multi-I/O interface, designed for high-reliability embedded boot and code storage in industrial and automotive systems. It supports Quad Read up to 52 MBps, uniform 256-KB sector erase, 100,000 program-erase cycles, 20-year data retention, and operates across –40°C to +105°C (Industrial Plus grade).

For engineers reviewing the S25FL512SAGBHB213 datasheet, S25FL512SAGBHB213 pinout, S25FL512SAGBHB213 application, or S25FL512SAGBHB213 equivalent, this device delivers deterministic boot timing via AutoBoot, hardware-assisted ECC, OTP security, and dual-voltage I/O (VIO = 1.65–3.6 V) for flexible host interface integration.

Technical Context

This FL-S series flash implements Infineon's 65 nm MIRRORBIT™ technology with Eclipse™ architecture, enabling true single-bit ECC correction in hardware without firmware overhead. Its command set is fully compatible with S25FL-A/K/P families and supports both SDR and DDR SPI modes, including Fast, Dual, and Quad variants with 32-bit extended addressing.

The device integrates dedicated control logic for AutoBoot execution at power-up/reset, configurable block protection via status register bits, and Advanced Sector Protection (ASP) with password- or boot-code–controlled individual sector locking - all operating within a single 2.7–3.6 V core supply and independent 1.65–3.6 V I/O rail.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (FAB024, 6 × 8 mm, 0.8 mm pitch), Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial NOR flash applications.

Compared with S25FL512SAGBHB213, the SO16 alternative trades package ruggedness for assembly flexibility, while the Winbond part omits critical automotive-grade features - making the Infineon device the sole choice for safety-critical, long-lifecycle deployments requiring hardware-enforced data integrity.

Availability

S25FL512SAGBHB213 is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ADAS boot memory, and medical imaging system code storage requiring stable component supply across extended product lifecycles.

Supply support for S25FL512SAGBHB213 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensing, and memory solutions for industrial, automotive, and renewable energy markets.

The FL-S flash product line targets high-reliability embedded systems demanding deterministic boot, long-term data integrity, and AEC-Q100-compliant nonvolatile storage - especially where firmware security and thermal resilience are mandatory.

FAQ

Does S25FL512SAGBHB213 support DDR SPI mode?

Yes, it supports Fast Read DDR, Dual Read DDR, and Quad Read DDR commands at up to 80 MHz clock rate, delivering up to 80 MBps read throughput when VIO = VCC = 3.0–3.6 V. DDR mode requires precise setup/hold timing per AC specifications in Section 5.5 of the datasheet and is enabled via configuration register bit CR[3].

What is the function of the HOLD# pin during active read operations?

HOLD# pauses ongoing SPI transactions without resetting internal state - allowing the host to temporarily suspend data streaming (e.g., to service higher-priority interrupts). When asserted low, IO0–IO3 enter high-impedance state and SCK is ignored until HOLD# is deasserted, after which the transaction resumes from the exact bit position.

How is the 1024-byte OTP array accessed and protected?

The OTP array is accessed via dedicated One-Time Program commands (0x4B, 0x42) and resides at fixed address 0x00000000. Once programmed, bits cannot be reset. Protection is enforced by Status Register Lock Bit (SR[7]) and requires Write Enable before any OTP write - preventing accidental overwrite during normal flash operations.

Can S25FL512SAGBHB213 operate with VIO = 1.8 V while VCC = 3.3 V?

Yes, it supports independent I/O and core supplies: VIO may be set from 1.65 V to 2.7 V (e.g., 1.8 V) while VCC remains within 2.7–3.6 V (e.g., 3.3 V). This allows direct interfacing with 1.8 V microcontrollers without level shifters, provided timing margins are verified per Section 4.5 DC characteristics and Section 5.2 AC test conditions.