Infineon Technologies S25FL512SAGBHI213

Overview

S25FL512SAGBHI213 from Infineon is a 512 Mb (64 MB) serial NOR flash memory with SPI Multi-I/O interface, designed for boot code and firmware storage in embedded systems. It supports Quad Read up to 52 MBps, uniform 256-KB sector erase, 100,000 program-erase cycles, and operates across –40°C to +105°C (Industrial Plus grade) in a 24-ball FBGA package.

For engineers reviewing the S25FL512SAGBHI213 datasheet, S25FL512SAGBHI213 pinout, S25FL512SAGBHI213 application, or S25FL512SAGBHI213 equivalent, key selection criteria include Quad DDR read performance (80 MBps), integrated ECC, AEC-Q100 Grade 2 qualification, and compatibility with S25FL-P family footprints.

Technical Context

This device implements Infineon's 65 nm MIRRORBIT™ technology with Eclipse™ architecture, enabling high-density nonvolatile storage with deterministic timing and low-latency boot execution. Its dual-voltage I/O (VIO = 1.65–3.6 V) and core supply (VCC = 2.7–3.6 V) support mixed-signal SoC interfacing while maintaining signal integrity at up to 133 MHz SDR clock rates.

The logic block integrates SRAM latches, X/Y decoders, and configurable control logic supporting SPI modes 0/3, DDR command execution, AutoBoot from preselected address, and Common Flash Interface (CFI) for runtime configuration discovery. Sector protection is enforced via status register bits and Advanced Sector Protection (ASP) with password- or boot-code-controlled locking.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (FAC024 footprint, 4 × 6 ball array, 0.8 mm pitch, Pb-free).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial NOR flash memory applications.

Compared with S25FL512SAGBHI213, the SOIC variant trades mechanical ruggedness for ease of hand-soldering, while the Winbond part sacrifices voltage flexibility and temperature rating for lower unit cost-neither matches the combined AEC-Q100 Grade 2, dual-voltage I/O, and 80 MBps DDR read capability of the original.

Availability

S25FL512SAGBHI213 is available at Aetrix Electronics and suitable for automotive powertrain modules, industrial PLCs, medical imaging subsystems, and avionics displays requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S25FL512SAGBHI213 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, and security solutions for automotive, industrial, and communications markets.

The FL-S family targets high-reliability embedded systems needing fast, secure, and long-life serial NOR flash-designed specifically for automotive ECU boot, industrial control firmware, and safety-certified applications.

FAQ

What is the maximum clock frequency supported in DDR mode?

The S25FL512SAGBHI213 supports Fast Read DDR, Dual Read DDR, and Quad Read DDR at up to 80 MHz clock frequency, delivering 20 MBps, 40 MBps, and 80 MBps respectively when VIO = VCC = 3.0–3.6 V. This is confirmed in the Performance Summary table on page 3 of the official datasheet (Rev. *U).

Does this part include hardware-based write protection?

Yes. The device provides dual-layer hardware write protection: WP# pin assertion disables all program/erase commands, and status register bits (SRWD, SEC, TB, BP[2:0]) enable sector-level lock-down. These features are fully documented in Section 8.3 (Block Protection) of the datasheet.

Is the 24-ball FBGA package lead-free and RoHS compliant?

Yes. All packages for the S25FL512SAGBHI213-including the FAC024 FBGA-are Pb-free and RoHS compliant, as explicitly stated in the "Packages (all Pb-free)" section on page 2 of the datasheet and verified in Infineon's official material declarations.

Can this flash be used with a 1.8 V microcontroller interface?

Yes. The device supports VIO from 1.65 V to 3.6 V independently of VCC (2.7–3.6 V), allowing direct connection to 1.8 V hosts. However, maximum read speeds are reduced at lower VIO (e.g., Quad Read drops to 33 MBps at 66 MHz when VIO = 1.65–2.7 V), as specified in the Performance Summary table.