Infineon Technologies S25FL512SAGBHID10

Overview

S25FL512SAGBHID10 from Infineon is a 512 Mb (64 MB) serial NOR flash memory IC with SPI Multi-I/O interface, 3.0 V core supply, uniform 256-KB sectors, Quad-Input Page Programming, and hardware ECC. It supports Fast/Quad/DDR read modes up to 80 MHz DDR clock (80 MBps Quad Read DDR), operates from –40°C to +105°C (Industrial Plus), and is used in boot code storage for embedded microcontrollers.

For engineers reviewing the S25FL512SAGBHID10 datasheet, S25FL512SAGBHID10 pinout, S25FL512SAGBHID10 application, or S25FL512SAGBHID10 equivalent, key selection criteria include SPI Multi-I/O timing compliance, 256-KB uniform sector erase granularity, OTP-based secure boot configuration, AEC-Q100 Grade 2 qualification, and VIO voltage flexibility (1.65–3.6 V).

Technical Context

This device implements Infineon's 65 nm MIRRORBIT™ technology with Eclipse™ architecture, enabling single-bit error correction via on-die hardware ECC and supporting both standard SPI (modes 0/3) and DDR-capable command protocols. Its CFI-compliant register set and JEDEC JESD216 SFDP table allow automatic configuration by host boot loaders.

The logic block diagram confirms dual-supply operation: VCC (2.7–3.6 V) powers the core and array, while VIO (1.65–3.6 V) independently supplies I/O drivers-enabling interoperability with 1.8 V or 3.3 V host controllers without level shifters.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (FAB024 footprint, 6 × 8 mm, 0.8 mm pitch), Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial NOR flash applications.

Compared with S25FL512SAGBHID10, the SO16 variant offers identical functionality in through-hole-compatible packaging, while the Winbond alternative trades DDR capability, ECC, and temperature range for lower static power-making it viable only in non-safety-critical, 1.8 V–only systems.

Availability

S25FL512SAGBHID10 is available at Aetrix Electronics and suitable for automotive ECU design, industrial PLC firmware storage, and medical imaging system boot code deployment requiring stable component supply across multi-year production cycles.

Supply support for S25FL512SAGBHID10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and secure embedded solutions, with global R&D and manufacturing infrastructure.

The FL-S family targets high-reliability embedded systems requiring fast, secure, and long-life nonvolatile storage-designed specifically for automotive, industrial, and medical applications demanding AEC-Q100 qualification and 20-year data retention.

FAQ

What is the maximum supported clock frequency for Quad Read DDR mode?

The S25FL512SAGBHID10 supports Quad Read DDR at up to 80 MHz clock frequency, delivering 80 MBps effective throughput when VIO = VCC = 3.0–3.6 V. This is confirmed in the Performance Summary table (Datasheet Rev. *U, page 3) and requires proper DDR timing setup per Section 5.5. The device does not support DDR above 80 MHz, even with tighter voltage margins.

Does this part support hardware reset via the RESET# pin, and what is its behavior?

Yes, the RESET# pin provides asynchronous hardware reset: asserting it low clears internal command state, resets the address counter, and places the device in standby mode. After release, the flash enters ready state within 20 μs (max) and retains all configuration register settings. This function is fully documented in Section 2.3 and validated per AEC-Q100 stress testing.

Is the 1024-byte OTP array one-time programmable only, or can it be erased?

The 1024-byte OTP (One-Time Programmable) array is permanently programmable-bits can be changed from '1' to '0', but cannot be reverted. Erase operations are not supported. This is specified in Section 8.1 and enforced by hardware fuses; attempting to reprogram locked OTP bytes results in command rejection with status register error flag set.

How does Advanced Sector Protection (ASP) differ from standard block protection?

Standard block protection uses status register bits to lock contiguous sector ranges globally, while ASP enables per-sector locking via password or boot code authentication-allowing dynamic, fine-grained protection without affecting adjacent sectors. ASP is implemented in silicon (Section 8.4) and requires dedicated commands (e.g., 0x42/0x44); it is not emulated in firmware.