Infineon Technologies S25FL512SAGBHVA10

Overview

S25FL512SAGBHVA10 from Infineon is a 512 Mb (64 MB) serial NOR flash memory with SPI Multi-I/O interface, 3.0 V core supply, uniform 256-KB sectors, Quad Read up to 52 MBps, and integrated hardware ECC for single-bit error correction. It supports AutoBoot, CFI, and DDR read modes, and is qualified for Industrial Plus (–40°C to +105°C) operation in FBGA package.

For engineers reviewing the S25FL512SAGBHVA10 datasheet, S25FL512SAGBHVA10 pinout, S25FL512SAGBHVA10 application, or S25FL512SAGBHVA10 equivalent, key selection factors include Quad/DDR read bandwidth, 100,000 program-erase cycles, OTP security, sector protection granularity, and AEC-Q100 Grade 2 qualification for extended-temperature embedded systems.

Technical Context

This device implements Infineon's 65 nm MIRRORBIT™ technology with Eclipse™ architecture, enabling high-density nonvolatile storage with deterministic timing and low-latency command execution. Its dual-voltage I/O (VIO = 1.65–3.6 V) decouples interface signaling from core logic, supporting mixed-voltage host designs.

The SPI interface supports all four clock polarity/phase modes (CPOL/CPHA 0/0, 0/1, 1/0, 1/1), plus DDR mode at up to 80 MHz, and features a 512-byte page programming buffer with Quad-Input Page Programming (QPP) for low-clock-rate systems. The CFI and SFDP tables provide standardized configuration discovery.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (FAB024 footprint, 6 × 8 mm, 0.8 mm pitch), Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial NOR flash applications.

Compared with S25FL512SAGBHVA10, the SOIC variant trades package ruggedness for ease of hand-soldering, while the Winbond alternative sacrifices voltage flexibility and DDR performance for lower cost in 1.8 V-only designs - neither matches the combined Industrial Plus rating, 256-KB uniform erase, and hardware ECC of the FBGA version.

Availability

S25FL512SAGBHVA10 is available at Aetrix Electronics and suitable for automotive ECU boot storage, industrial PLC firmware, medical imaging system code storage, and 5G baseband radio firmware requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S25FL512SAGBHVA10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and communications markets.

The S25FL-S family delivers high-reliability serial NOR flash optimized for mission-critical embedded systems requiring AEC-Q100 qualification, extended data retention, and hardware-based security features.

FAQ

What is the maximum clock frequency supported in DDR mode?

The S25FL512SAGBHVA10 supports Fast Read DDR, Dual Read DDR, and Quad Read DDR at up to 80 MHz clock frequency when VIO = VCC = 3.0–3.6 V, delivering up to 80 MBps read bandwidth in Quad DDR mode. This is specified in the AC characteristics section of the datasheet under DDR timing parameters.

Does this part support 32-bit addressing in standard SPI mode?

Yes - the device implements Extended Addressing with 32-bit address support across all read, program, and erase commands, enabled via Bank Address Register (BAR) or 4-byte address instruction (0x13). This is required to access the full 512 Mb density beyond the 16 MB limit of 24-bit addressing.

How is the 1024-byte OTP array accessed and protected?

The OTP array is accessed via dedicated One-Time-Program commands (0x4B, 0x42) and locked permanently after first write. Protection is enforced by Status Register bit SRP0/SRP1 and hardware WP# assertion; once programmed, OTP contents cannot be erased or rewritten, even with RESET#.

Can the device operate with VIO = 1.8 V while VCC = 3.3 V?

Yes - the device supports independent VIO (1.65–3.6 V) and VCC (2.7–3.6 V) supplies. At VIO = 1.8 V and VCC = 3.3 V, it operates in SDR mode up to 66 MHz with reduced read bandwidth (e.g., 33 MBps Quad Read), as defined in the performance summary table for low-VIO conditions.