Infineon Technologies S25FL512SAGBHVD13

Overview

S25FL512SAGBHVD13 from Infineon is a 512 Mb (64 MB) serial NOR flash memory IC with SPI Multi-I/O interface, 3.0 V core supply, uniform 256-KB sectors, Quad Read up to 52 MBps, and integrated hardware ECC for single-bit error correction. It operates across industrial (–40°C to +85°C) and automotive AEC-Q100 Grade 2 (–40°C to +105°C) temperature ranges and is used in boot code storage for microcontroller-based edge gateways.

For engineers reviewing the S25FL512SAGBHVD13 datasheet, S25FL512SAGBHVD13 pinout, S25FL512SAGBHVD13 application, or S25FL512SAGBHVD13 equivalent, key selection criteria include Quad DDR read performance (80 MBps), OTP security array size (1024 bytes), sector protection granularity (256 KB), and compatibility with S25FL-P family footprints.

Technical Context

This device implements Infineon's 65 nm MIRRORBIT™ technology with Eclipse™ architecture, enabling high-density nonvolatile storage with deterministic timing and low-power operation. Its dual-voltage design supports independent core (2.7–3.6 V) and I/O (1.65–3.6 V) supplies, allowing interoperability with 1.8 V and 3.3 V host controllers.

The command set includes standard SPI modes 0/3, DDR-capable read protocols, AutoBoot functionality for configurable power-up execution, and Common Flash Interface (CFI) metadata for runtime configuration discovery. Sector erase and page programming are fully hardware-managed with internal ECC generation and verification.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (FAB024, 6 × 8 mm, 0.8 mm pitch), Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial NOR flash memory applications.

Compared with S25FL512SAGBHVD13, the SOIC variant offers identical functionality in legacy-compatible packaging, while the Winbond part trades security and qualification for lower unit cost - making it viable only in non-safety, non-automotive contexts.

Availability

S25FL512SAGBHVD13 is available at Aetrix Electronics and suitable for industrial PLCs, automotive ADAS modules, and edge gateway OTA storage requiring stable component supply, long-term lifecycle support, and AEC-Q100 Grade 2 qualification.

Supply support for S25FL512SAGBHVD13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensing, and memory solutions for industrial, automotive, and IoT markets.

The S25FL-S series targets high-reliability embedded systems requiring secure, fast, and long-life nonvolatile storage - especially where AEC-Q100 qualification, hardware ECC, and uniform sector erase are mandatory.

FAQ

What is the maximum clock frequency supported for Quad DDR read operations?

The S25FL512SAGBHVD13 supports Quad DDR read at up to 80 MHz, delivering 80 MBps throughput when VIO = VCC = 3.0–3.6 V. This requires strict adherence to DDR timing parameters including tDSH, tDHD, and tDQMH as specified in Section 5.5 of the datasheet. The device automatically configures DDR mode upon receipt of the Fast Read DDR command (0x0D) after proper register setup.

Does this part support hardware write protection without software intervention?

Yes - the WP#/IO2 pin provides hardware-level write protection. When driven low, it disables all program and erase commands across the entire memory array, regardless of status register settings. This function remains active even during power transitions and does not require SPI communication or register writes to engage, making it suitable for fail-safe lock-down in safety-critical systems.

How is the 1024-byte OTP array accessed and protected?

The OTP array is accessed via dedicated One-Time-Program commands (0x4B, 0x42) and resides at fixed address 0x00000000 in its own address space. Once programmed, bits cannot be reset. Protection is enforced by Status Register Lock Bit (SRP) and hardware fuse; writing to OTP requires prior Write Enable (0x06) and confirmation via SRP=1 and WEL=1, preventing accidental overwrite during normal operation.

Can this device operate with a 1.8 V I/O supply while maintaining full read performance?

At VIO = 1.65–2.7 V, Quad Read speed drops to 33 MBps (66 MHz clock), versus 52 MBps at 3.0–3.6 V. All other features remain functional, including AutoBoot, ECC, and ASP. However, DDR modes are disabled below 2.7 V I/O, and Fast Read DDR (0x0D) is not supported - limiting maximum throughput in 1.8 V systems to 8.25 MBps (Fast Read) or 33 MBps (Quad Read).