Infineon Technologies S25FS064SAGNFM030

Overview

S25FS064SAGNFM030 from Infineon Technologies is a 64 Mb (8 MB) serial NOR flash memory with SPI Multi-I/O interface, operating at 1.8 V supply. It supports DDR Quad I/O read up to 80 MBps, features hardware ECC for single-bit error correction, and offers hybrid sector erase (eight 4 KB + one 32 KB sectors) plus uniform 64 KB/256 KB block erase options. Used in industrial microcontroller boot code storage requiring AEC-Q100 Grade 2 qualification (–40°C to +105°C).

For engineers reviewing the S25FS064SAGNFM030 datasheet, S25FS064SAGNFM030 pinout, S25FS064SAGNFM030 application, or S25FS064SAGNFM030 equivalent, key selection criteria include SPI-MIO command compatibility with S25FL-S family, SFDP/CFI support for auto-configuration, OTP array size (1024 bytes), and deep power-down current (6 µA).

Technical Context

This device implements Infineon's 65-nm MIRRORBIT™ technology with ECLIPSE architecture, enabling high-density, low-voltage operation across extended temperature ranges. Its dual-mode SPI interface supports both legacy single-data-rate (SDR) and double-data-rate (DDR) protocols, with QPI mode for quad-parallel instruction execution.

The internal control logic integrates automatic ECC generation, program/erase suspend-resume capability, and configurable sector protection via status register bits, hardware WP#, and advanced sector protection (ASP) with password-controlled read access - all managed through standard SPI command subsets compatible with S25FL1-K/S25FL-P families.

Key Specifications

Pinout & Package

Package: 8-lead SOIC 208 mil (SOC008), Pb-free, industrial-grade body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial NOR flash applications.

Compared with S25FS064SAGNFM020, this part adds AEC-Q100 Grade 2 qualification and extended temperature support; versus S25FL132K0XMFI010, it delivers double density, 1.8 V operation, DDR bandwidth, and built-in ECC - making it suitable for next-generation automotive and industrial edge controllers.

Availability

S25FS064SAGNFM030 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLCs, medical diagnostic UIs, and smart energy meters requiring stable component supply across extended temperature and qualification requirements.

Supply support for S25FS064SAGNFM030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and IoT markets.

The FS-S Flash product line targets high-reliability embedded systems needing fast, secure, and qualified nonvolatile memory with advanced features like hardware ECC and ASP - specifically engineered for automotive ADAS, industrial control, and medical equipment.

FAQ

What is the maximum DDR Quad I/O read speed supported by S25FS064SAGNFM030?

The device achieves 80 MBps DDR Quad I/O read throughput at 80 MHz clock frequency, as specified in Table 1 of the datasheet. This performance requires proper impedance-matched PCB routing, controlled slew rate on SCK, and correct QPI mode entry sequence prior to read commands.

Does S25FS064SAGNFM030 support execute-in-place (XIP) operation?

Yes, it supports Continuous Read mode for XIP execution, allowing microcontrollers to fetch instructions directly from flash without loading into RAM. This mode is enabled via specific command sequences and requires stable VCC and proper timing margins per AC specifications in Section 5.4.

How is the 1024-byte OTP array accessed and programmed?

The OTP array is accessed using dedicated SPI commands (0x4B for read, 0x42 for program) after unlocking via status register write. Programming is irreversible and requires VPP voltage (if externally supplied) or internal charge pump; each byte can be set only once, and verification is performed automatically post-write.

Can S25FS064SAGNFM030 be used in place of S25FL1-K series devices?

Yes, it maintains command subset and footprint compatibility with S25FL1-K, S25FL-P, and S25FL-S families, including identical pinout for SOIC and LGA packages. However, DDR mode, SFDP version, and ASP implementation differ - firmware drivers must be updated to leverage new features or maintain backward compatibility.