Infineon Technologies S26HS02GTFPBHB040

Overview

S26HS02GTFPBHB040 from Infineon is a 2 Gb (256 MB) automotive-grade SEMPER™ NOR Flash memory with HYPERBUS™ DDR interface, 1.8 V core supply (HS-T), AEC-Q100 Grade 2 (–40 °C to +105 °C), 24-ball BGA package, and ISO 26262 ASIL-B compliant functional safety architecture. It delivers up to 332 MBps read throughput, supports 256 KB/4 KB hybrid sector erase, and integrates on-die SECDED ECC, interface CRC, and SafeBoot recovery for ADAS and domain controller boot storage.

For engineers reviewing the S26HS02GTFPBHB040 datasheet, S26HS02GTFPBHB040 pinout, S26HS02GTFPBHB040 application, or S26HS02GTFPBHB040 equivalent, key selection criteria include HYPERBUS™ DDR timing compliance, ASIL-B safety certification status, 24-ball BGA layout constraints, 256 KB vs. 4 KB sector erase flexibility, and dual-voltage (1.8 V/3.0 V) interface compatibility with host controllers.

Technical Context

This device implements Infineon's 45-nm MIRRORBIT™ technology with two bits per cell and uses a multi-chip package (DDP: 2 × 1 Gb dies). It supports both legacy SPI (×1, SDR, up to 20.75 MBps) and HYPERBUS™ (×8, DDR, up to 332 MBps), with programmable page buffer (256/512 bytes) and configurable hybrid sector architecture (top/bottom 4 KB sectors + uniform 256 KB).

The interface includes differential clock inputs (CK/CK#), read data strobe (DS), and open-drain interrupt/reset outputs (INT#/RSTO#). Internal safety mechanisms include interface CRC, array data integrity CRC, SafeBoot initialization reporting, and hardware reset via RESET# or CS# signaling - all aligned to ISO 26262 ASIL-B requirements for automotive boot code storage.

Key Specifications

Pinout & Package

Package: 24-ball BGA, 8 mm × 8 mm, 0.8 mm pitch, ball layout per JEDEC MO-279AB. Compatible with standard reflow profiles; ultrasonic cleaning prohibited.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NOR flash memory applications.

Compared with S26HS02GTFPBHB040, the S26KS512SDPBHB020 reduces memory capacity and peak bandwidth but lowers cost and power; the S26HL02GTFFBHB020 maintains density but mandates higher VCCQ, limiting use in 1.8 V–optimized automotive designs.

Availability

S26HS02GTFPBHB040 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, central gateway ECUs, and autonomous driving compute modules requiring stable component supply, long-term lifecycle assurance, and ASIL-B safety certification.

Supply support for S26HS02GTFPBHB040 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and safety-certified memory solutions.

The SEMPER™ Flash product line targets functional-safety-critical automotive applications, delivering high-reliability NOR flash with integrated ISO 26262-aligned safety mechanisms and HYPERBUS™-accelerated performance for next-generation E/E architectures.

FAQ

Is S26HS02GTFPBHB040 pin-compatible with other SEMPER™ Flash devices in the 24-ball BGA package?

Yes - all S26HS/S26HL series devices in the FBGA24 (8 mm × 8 mm) package share identical pinout, including CS#, CK/CK#, DS, DQ[7:0], RESET#, RSTO#, INT#, VCC/VCCQ, and VSS/VSSQ. This enables drop-in replacement within the same voltage grade (HS-T or HL-T) and density class (2 Gb DDP), provided timing and safety configuration match system requirements.

Does S26HS02GTFPBHB040 require external termination resistors for HYPERBUS™ DDR operation?

Yes - the HYPERBUS™ interface requires controlled-impedance routing and on-die or external parallel termination (typically 50 Ω) on CK, CK#, DS, and DQ[7:0] lines to maintain signal integrity at 166 MHz DDR. The datasheet specifies that CK/CK# are complementary (not true differential), so system-level termination must be designed per Infineon's layout guidelines to avoid timing skew and data eye closure.

Can the OTP Secure Silicon Region (SSR) be reprogrammed after initial programming?

No - the 1024-byte SSR is one-time-programmable using dedicated command sequences. Once a byte is programmed from FFh to any non-FFh value, it cannot be reverted. Programming is irreversible and requires elevated voltage (VPP) and specific unlock sequences; it is intended for immutable security assets like root keys, certificates, or calibration constants.

What happens during power loss in the middle of a 256 KB sector erase operation?

The device detects power loss via internal brown-out circuitry and halts the erase. Upon power restoration, SafeBoot reports the incomplete erase in status registers and sets the sector erase status indicator bit. The affected sector remains in an undefined state until explicitly verified and re-erased - preventing corrupted firmware execution and enabling host-initiated recovery before reboot.