Infineon Technologies S26HS02GTFPBHB043

Overview

S26HS02GTFPBHB043 from Infineon is a 2 Gb (256 MB) SEMPER™ NOR Flash memory with HYPERBUS™ DDR interface, 1.8 V core supply (HS-T grade), 24-ball BGA package, and ISO 26262 ASIL-B compliance. It delivers up to 332 MBps read throughput, supports 256 KB and 4 KB sector erase, includes 1024-byte OTP secure silicon region, and operates across -40 °C to +105 °C for industrial-plus applications.

For engineers reviewing the S26HS02GTFPBHB043 datasheet, S26HS02GTFPBHB043 pinout, S26HS02GTFPBHB043 application, or S26HS02GTFPBHB043 equivalent, key selection criteria include HYPERBUS™ DDR timing alignment with DS strobe, dual-die package thermal behavior, sector protection granularity, SECDED ECC coverage, and boot interface mode configuration (SPI vs. HYPERBUS™).

Technical Context

This device implements Infineon's 45-nm MIRRORBIT™ architecture with two bits per cell and integrates dual 1 Gb dies in a single 24-ball BGA. It supports both legacy ×1 SPI (SDR, up to 20.75 MBps) and HYPERBUS™ ×8 DDR (up to 332 MBps), with command/address/data transferred in DDR fashion over DQ[7:0] and synchronized via CK/CK# and DS.

The interface uses JEDEC JESD251-compliant eXpanded SPI (xSPI) protocol, enabling configurable burst modes (linear/wrapped), page-aligned 32-byte reads, and automatic next-page prefetch during linear bursts. Safety features include interface CRC, data integrity CRC, SafeBoot initialization reporting, and hardware reset via RESET# and RSTO# signals.

Key Specifications

Pinout & Package

24-ball BGA package (8 mm × 8 mm, 0.8 mm pitch) with VCC/VSS core power and VCCQ/VSSQ I/O power domains. Pin functions validated per Infineon Summary Datasheet 002-34696 Rev. **, pages 5–7.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability NOR flash applications.

Compared with S26HS02GTFPBHB043, the S26KS512SDPBHV020 offers lower cost and footprint compatibility but omits safety mechanisms essential for ASIL-B systems, while the S26HS04GTFPBHB043 provides seamless scalability to 4 Gb without interface or software changes-critical for platform reuse across product tiers.

Availability

S26HS02GTFPBHB043 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, and medical imaging system boot memory requiring stable component supply, long-term lifecycle support, and ASIL-B-certified flash.

Supply support for S26HS02GTFPBHB043 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and safety-certified memory solutions, with global manufacturing and quality systems aligned to IATF 16949.

The SEMPER™ Flash product line targets functional-safety-critical applications including automotive ECUs, industrial automation, and medical devices, combining high-speed HYPERBUS™ access with ISO 26262-compliant reliability architecture.

FAQ

Does S26HS02GTFPBHB043 support both SPI and HYPERBUS™ interfaces simultaneously?

No. The device boots in either legacy ×1 SPI or HYPERBUS™ ×8 mode, selected via hardware strapping or SFDP configuration. Both interfaces share the same DQ[7:0] pins and CS#/CK/DS signals, but operate under mutually exclusive protocols-switching requires reset and reinitialization. The default boot interface is configurable in the SFDP register.

What is the purpose of the RSTO# pin, and how does it differ from RESET#?

RSTO# is an open-drain output that signals internal power-on reset (POR) status, transitioning from LOW to high-impedance after timeout to indicate readiness. RESET# is an input that triggers POR when pulled LOW. RSTO# blocks all transactions while asserted, whereas RESET# forces immediate initialization and places DQ/DS in high-Z-making RSTO# suitable for cascaded system reset sequencing and RESET# for emergency recovery.

How does the 4 KB sector erase endurance compare to the main array, and why is it lower?

The 4 KB sectors are rated for 300,000 program-erase cycles versus 2,560,000 for 256 KB sectors. This reflects physical wear leveling constraints: smaller sectors undergo more frequent updates (e.g., configuration storage), so the lower endurance is a design trade-off to maintain consistent cell stress distribution and ensure predictable lifetime in mixed-use applications.

Can the OTP Secure Silicon Region (SSR) be reprogrammed after initial write?

No. The 1024-byte SSR is one-time programmable using dedicated commands (0x42/0x44). Once written, bits can only be changed from 1 to 0, and no erase mechanism exists. This immutability ensures cryptographic keys or boot code hashes remain tamper-evident and resistant to overwrite attacks-critical for root-of-trust implementation.