Infineon Technologies S26HS02GTFPBHB050

Overview

S26HS02GTFPBHB050 from Infineon is a 2 Gb (256 MB) automotive-grade SEMPER™ NOR Flash memory with HYPERBUS™ DDR interface, 1.8 V core supply (HS-T), and AEC-Q100 Grade 2 qualification (-40 °C to +105 °C). It implements 45-nm MIRRORBIT™ technology in a dual-die package (DDP), supports 332 MBps read throughput via DDR HYPERBUS™ at 166 MHz, includes SECDED ECC, and features ISO 26262 ASIL-B compliance with ASIL-D readiness for safety-critical automotive applications including ADAS domain controllers and infotainment boot storage.

For engineers reviewing the S26HS02GTFPBHB050 datasheet, S26HS02GTFPBHB050 pinout, S26HS02GTFPBHB050 application, or S26HS02GTFPBHB050 equivalent, key selection criteria include HYPERBUS™ vs. legacy SPI interface mode support, 24-ball BGA package compatibility, 4 KB/256 KB hybrid sector architecture flexibility, OTP secure silicon region (1024-byte SSR), and functional safety features including SafeBoot, interface CRC, and data integrity CRC.

Technical Context

This device integrates two 1 Gb MIRRORBIT™ NOR dies in a monolithic 24-ball BGA package, sharing common control signals (CS#, CK/CK#, DS, RESET#, INT#, RSTO#) while operating as a single logical 2 Gb address space. Its HYPERBUS™ interface uses differential clocking (CK/CK#) and data strobe (DS) to enable edge-aligned DDR reads at up to 332 MBps, with command/address latched on clock crossings and output data synchronized to DS transitions.

The flash supports configurable page programming buffers (256 B or 512 B), three sector architecture modes (uniform 256 KB, hybrid top/bottom 4 KB groups, or split 4 KB top+bottom), and dual-voltage operation: 1.7–2.0 V (HS-T) for core and 2.7–3.6 V (HL-T) for I/O. Built-in safety mechanisms include SafeBoot initialization reporting, sector erase status indicator for power-loss recovery, and hardware reset via CS# or dedicated RESET# pin.

Key Specifications

Pinout & Package

Package: 24-ball BGA, 8 mm × 8 mm, 0.8 mm pitch, RoHS-compliant, with VCC/VSS (core) and VCCQ/VSSQ (I/O) power/ground separation for noise isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-reliability automotive NOR flash applications.

Compared with S26HL02GTABHI010 and MX25L25645G, the S26HS02GTFPBHB050 uniquely delivers ASIL-B certification, 1.8 V core operation, and 332 MBps HYPERBUS™ DDR performance in a drop-in-compatible 24-ball BGA - making it the sole option for next-generation automotive SoC boot memory requiring functional safety and high bandwidth.

Availability

S26HS02GTFPBHB050 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, electric vehicle battery management systems, infotainment head-units, and gateway ECUs requiring stable component supply with full AEC-Q100 Grade 2 traceability and long-term lifecycle support.

Supply support for S26HS02GTFPBHB050 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in functional safety and high-reliability memory solutions.

The SEMPER™ Flash product line was developed specifically for automotive and industrial applications demanding ISO 26262 compliance, high endurance, and high-speed serial interfaces - targeting boot code, firmware, and configuration storage in safety-critical systems.

FAQ

Does S26HS02GTFPBHB050 support both HYPERBUS™ and legacy SPI interfaces simultaneously?

No - the device operates in either HYPERBUS™ (×8 DDR) or legacy SPI (×1 SDR) mode, selected at power-on via SFDP configuration or hardware strapping. Mode switching requires reset; concurrent operation is not supported. Default boot is configurable to SPI for backward compatibility, but HYPERBUS™ must be enabled explicitly for high-speed access.

What is the function of the RSTO# pin, and how does it differ from RESET#?

RSTO# is an open-drain output that signals internal power-on reset (POR) activity - it goes LOW during POR and releases to high-impedance after timeout, allowing external pull-up to assert system reset. RESET# is an input that triggers POR when driven LOW. RSTO# enables synchronous system-level reset coordination; RESET# provides manual or watchdog-initiated reset initiation.

How is the 4 KB sector architecture implemented, and can it be reconfigured in-field?

The device supports three fixed sector configurations (uniform, hybrid top/bottom, split top+bottom) defined at manufacturing via one-time programmable fuses. Configuration is immutable after shipment - no in-field reconfiguration. However, software can dynamically protect/unprotect individual 4 KB or 256 KB sectors using command sequences, enabling flexible OTA update partitioning.

Is the OTP Secure Silicon Region (SSR) accessible via standard SPI or HYPERBUS™ commands?

Yes - the 1024-byte SSR is mapped into the main address space and accessed using standard read/write/erase commands, but with additional lock bits. Once locked (via dedicated command), SSR contents become read-only and immune to accidental overwrite. Access requires elevated privilege level; standard firmware cannot modify locked SSR without hardware reset and unlock sequence.