Infineon Technologies S26HS02GTFPBHM040

Overview

S26HS02GTFPBHM040 from Infineon is a 2 Gb (256 MB) automotive-grade SEMPER™ NOR Flash memory with HYPERBUS™ DDR interface, 1.8 V core supply, and AEC-Q100 Grade 2 qualification (–40 °C to +105 °C). It uses 45-nm MIRRORBIT™ technology in a dual-die package (DDP), supports 332 MBps read throughput via DDR HYPERBUS™ at 166 MHz, and integrates SECDED ECC, interface/data integrity CRC, and SafeBoot for functional safety-critical boot and code storage.

For engineers reviewing the S26HS02GTFPBHM040 datasheet, S26HS02GTFPBHM040 pinout, S26HS02GTFPBHM040 application, or S26HS02GTFPBHM040 equivalent, key selection criteria include ASIL-B compliance, HYPERBUS™ vs. legacy SPI interface mode support, 256 KB/4 KB hybrid sector architecture, OTP secure silicon region (1024 bytes), and 24-ball 8 mm × 8 mm BGA package compatibility with high-speed PCB layout constraints.

Technical Context

This device implements a dual-die MCP architecture with shared control signals across two 1 Gb dies, enabling uniform address mapping and concurrent access handling. Its HYPERBUS™ interface operates in DDR mode with differential clock (CK/CK#) or single-ended CK, using DS strobe for precise read-data capture and DQ[7:0] for bidirectional 8-bit DDR transfers.

The memory supports configurable page programming buffers (256 B or 512 B), three sector architecture modes (uniform, hybrid grouped, hybrid split), and dedicated hardware reset (RESET#) plus reset output (RSTO#) for system-level POR coordination. Safety features include SafeBoot initialization reporting, configuration corruption detection, and built-in ECC that corrects single-bit errors and detects double-bit errors in the main array.

Key Specifications

Pinout & Package

Package: 24-ball BGA, 8 mm × 8 mm, 0.8 mm pitch, ball layout per JEDEC MO-270AB. Compatible with standard reflow profiles; ultrasonic cleaning prohibited.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NOR flash boot memory applications.

Compared with S26HS02GTFPBHM040, the Cypress alternative offers lower density and no safety certification-limiting use to non-automotive contexts-while the Infineon HL-T variant demands full 3.0 V rail redesign, making the HS-T version uniquely suitable for modern low-voltage automotive SoCs with integrated 1.8 V I/O domains.

Availability

S26HS02GTFPBHM040 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLCs, medical imaging subsystems, and avionics display units requiring stable component supply, long-lifecycle support, and functional safety certification.

Supply support for S26HS02GTFPBHM040 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and safety-certified memory solutions, with global R&D centers and ISO/TS 16949-certified manufacturing.

The SEMPER™ Flash product line targets functional safety–critical applications in automotive, industrial, and medical systems, delivering certified NOR flash with integrated error detection, secure boot, and high-speed HYPERBUS™ interfaces for next-generation deterministic embedded systems.

FAQ

What interface modes does S26HS02GTFPBHM040 support, and how are they selected?

S26HS02GTFPBHM040 supports both HYPERBUS™ DDR (×8) and legacy SPI (×1) modes. Interface selection is determined at power-on via the SFDP (Serial Flash Discoverable Parameters) register and can be reconfigured dynamically through command sequences. Default boot occurs in legacy SPI unless overridden by host controller initialization flow. No hardware strapping pins are used-mode is software-configurable and persistent across resets.

Does S26HS02GTFPBHM040 require external ECC circuitry?

No. The device includes on-die SECDED (Single Error Correction, Double Error Detection) logic that automatically corrects single-bit errors and detects double-bit errors in the main memory array during read operations. This eliminates the need for external ECC engines or software-based correction routines, reducing host processor overhead and simplifying system-level safety certification.

How is the 4 KB sector architecture implemented, and what is its endurance rating?

The device supports hybrid sector configurations with thirty-two 4 KB sectors located either at the top, bottom, or both ends of the address space. These sectors are physically distinct from the 256 KB main array and rated for 300,000 program-erase cycles-optimized for frequent firmware parameter updates while preserving the 2,560,000-cycle endurance of the larger sectors used for static code storage.

What is the role of RSTO# and how does it differ from RESET#?

RSTO# is an open-drain output that signals internal power-on reset (POR) activity, transitioning LOW during POR and releasing to high-impedance upon completion. Unlike RESET#, which is an input that forces device reset, RSTO# enables system-level synchronization-allowing other components to hold off initialization until flash is fully ready. It is not a direct inversion of RESET# and has a user-configurable timeout before release.