Infineon Technologies S26HS02GTFPBHM050

Overview

S26HS02GTFPBHM050 from Infineon is a 2 Gb (256 MB) automotive-grade SEMPER™ NOR Flash memory with HYPERBUS™ DDR interface, 1.8 V core supply, 24-ball BGA (8 × 8 mm), supporting up to 332 MBps read throughput, ISO 26262 ASIL-B compliant functional safety, and dual-die package (DDP) architecture.

For engineers reviewing the S26HS02GTFPBHM050 datasheet, S26HS02GTFPBHM050 pinout, S26HS02GTFPBHM050 application, or S26HS02GTFPBHM050 equivalent, key selection criteria include HYPERBUS™ vs. legacy SPI interface mode support, 4 KB/256 KB hybrid sector configuration, built-in SECDED ECC, and AEC-Q100 Grade 2 (–40 °C to +105 °C) qualification for ADAS and domain controller boot storage.

Technical Context

This device implements Infineon's 45-nm MIRRORBIT™ technology with two bits per cell and integrates dual 1 Gb dies in a single 24-ball BGA package. It supports both HYPERBUS™ DDR (166 MHz, 332 MBps) and legacy ×1 SPI (166 MHz, 20.75 MBps) interfaces, with configurable initial access latency (14 cycles in DDR HS-T mode) and programmable page buffer (256/512 bytes).

Functional safety is embedded at silicon level: on-chip ECC corrects single-bit errors and detects double-bit errors, interface CRC validates host-to-flash communication, Data Integrity CRC checks array contents, and SafeBoot monitors initialization integrity and enables recovery from configuration corruption - all aligned to ISO 26262 ASIL-B compliance and ASIL-D readiness.

Key Specifications

Pinout & Package

Package: 24-ball BGA, 8 mm × 8 mm, 0.8 mm pitch, RoHS-compliant. Ball layout optimized for signal integrity in high-speed DDR read operations with dedicated VCCQ/VSSQ rails and differential clock pair (CK/CK#).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NOR flash memory applications.

Compared with S26HS02GTFPBHM050, the S26KS512SDPBHV020 offers lower density and no functional safety features, while the S26HL02GTFFBHM020 maintains safety compliance but requires higher core voltage - making the original part optimal for new 1.8 V automotive ADAS platforms demanding ASIL-B boot integrity.

Availability

S26HS02GTFPBHM050 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, and medical imaging system boot applications requiring stable component supply, long-term lifecycle support, and AEC-Q100 qualified flash memory.

Supply support for S26HS02GTFPBHM050 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and safety-certified memory solutions.

The SEMPER™ Flash product line is engineered for functional safety-critical systems, delivering high-speed, reliable NOR flash with integrated ISO 26262-aligned features for automotive, industrial, and medical boot and code storage.

FAQ

What interface modes does S26HS02GTFPBHM050 support?

S26HS02GTFPBHM050 supports two primary interface modes: HYPERBUS™ DDR (×8) at up to 332 MBps and legacy ×1 SPI (SDR) at up to 20.75 MBps. The device boots by default in legacy SPI mode but can be configured to initialize in HYPERBUS™ mode via SFDP or hardware strapping. Both modes share the same DQ[7:0] pins, with CK/CK# used for timing in HYPERBUS™ and CK only in SPI.

How is functional safety implemented in this device?

Functional safety is implemented through multiple hardware-enforced mechanisms: ISO 26262 ASIL-B compliance validated by TÜV SÜD, on-chip SECDED ECC for memory array data, interface CRC for command/address/data integrity, Data Integrity CRC for stored content verification, SafeBoot for initialization failure detection and recovery, and a dedicated OTP secure silicon region for cryptographic key storage.

Can S26HS02GTFPBHM050 be used in 1.8 V-only systems without level shifters?

Yes - S26HS02GTFPBHM050 operates with a 1.7–2.0 V core supply (HS-T grade) and separate 2.7–3.6 V I/O supply (VCCQ). In 1.8 V systems, VCC must be supplied at 1.8 V, while VCCQ must be provided at ≥2.7 V. This requires external I/O voltage translation or a dual-rail power supply; it cannot operate with VCCQ tied to 1.8 V.

What sector erase options are available and how are they configured?

The device supports uniform (all 256 KB), hybrid grouped (32 × 4 KB at top or bottom), and hybrid split (32 × 4 KB at both top and bottom) sector configurations. Configuration is set via status register bits (SR[15:14]) and locked using write protection. Sector protection is independent per sector and enforced by hardware, preventing accidental erase or program operations without explicit unlock sequences.