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Infineon Technologies S26HS02GTFPBHM053

Part No.:
S26HS02GTFPBHM053
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
24-VBGA
Datasheet:
AetrixS26HS02GTFPBHM053.pdf
Description:
IC FLASH 2GBIT HYPERBUS 24FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,533

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Product details

Overview

S26HS02GTFPBHM053 from Infineon is a 2 Gb (256 MB) automotive-grade SEMPER™ NOR Flash memory with HYPERBUS™ DDR interface, 1.8 V core supply (HS-T), 24-ball BGA package, and ISO 26262 ASIL-B compliance. It delivers up to 332 MBps read throughput, supports 256 KB and 4 KB sector erase, includes 1024-byte OTP secure silicon region, and operates across –40 °C to +125 °C (AEC-Q100 Grade 1).

For engineers reviewing the S26HS02GTFPBHM053 datasheet, S26HS02GTFPBHM053 pinout, S26HS02GTFPBHM053 application, or S26HS02GTFPBHM053 equivalent, key selection criteria include HYPERBUS™ DDR timing alignment with DS strobe, dual-die package integration, sector protection granularity, functional safety boot reporting (SafeBoot), and ECC-protected 2.56M-cycle endurance in main array.

Technical Context

This device implements Infineon's 45-nm MIRRORBIT™ architecture with two bits per cell and integrates dual 1 Gb dies in a single 24-ball BGA. It natively supports both legacy ×1 SPI (SDR, up to 21 MBps) and HYPERBUS™ ×8 DDR (up to 332 MBps), with command/address/data transferred in DDR fashion over DQ[7:0] and synchronized by CK/CK# and DS.

The interface uses JEDEC JESD251-compliant eXpanded SPI (xSPI) protocol and enables burst-oriented linear or wrapped reads. Internal page programming buffer is configurable to 256 or 512 bytes; sector erase supports uniform (all 256 KB), hybrid top/bottom (32 × 4 KB + rest 256 KB), or split (32 × 4 KB top + 32 × 4 KB bottom) configurations.

Key Specifications

Parameter Value and Actual Design Meaning
Memory density 2 Gb (256 MB) total capacity, implemented as dual 1 Gb die in MCP DDP configuration
Interface mode HYPERTBUS™ DDR (×8) with data strobe (DS); also supports legacy ×1 SPI SDR
Max read throughput 332 MBps at 166 MHz DDR clock (HS-T), enabling real-time code execution from flash in ADAS ECUs
Endurance & retention 2,560,000 program-erase cycles (main array), 300,000 cycles (4 KB sectors), 25-year data retention
Voltage range 1.7–2.0 V core (HS-T), 1.7–2.0 V I/O (VCCQ), compliant with automotive low-voltage rail requirements
Functional safety ISO 26262 ASIL-B certified, ASIL-D ready; includes SafeBoot, interface CRC, data integrity CRC, SECDED ECC
Operating temperature AEC-Q100 Grade 1: –40 °C to +125 °C, qualified for powertrain and safety-critical ECU use

Pinout & Package

Package: 24-ball BGA, 8 mm × 8 mm, 0.8 mm pitch, RoHS-compliant. Pin assignment validated per Infineon Summary Datasheet 002-34696 Rev. **, pages 5–7.

Pin/Terminal Circuit Role Design Meaning
CS# Chip Select input Active-low enable signal; all transactions begin with HIGH→LOW transition; drives outputs to high-Z when HIGH
CK / CK# Differential clock inputs Non-inverting/inverting clock pair; used for DDR timing capture; CK# is complement (not true differential)
DS Data strobe output Open-drain output toggling during HYPERBUS™ reads to indicate valid DQ[7:0] data edges; critical for timing margin
DQ[7:0] Bidirectional data bus 8-bit serial bus for command/address/data in HYPERBUS™ mode; DQ0/DQ1 only used as SI/SO in legacy SPI
RESET# Hardware reset input Optional active-low reset with internal weak pull-up; forces POR and places DQ/DS in high-Z state
RSTO# Reset output Open-drain POR indicator; blocks all transactions while LOW; synchronizes system-level reset sequencing
VCC / VSS Core power / ground 1.7–2.0 V core supply (HS-T); separate VCCQ/VSSQ required for I/O domain to isolate noise

Key Features

Feature Design Value
HYPERBUS™ DDR + DS strobe Enables deterministic read capture at 332 MBps without complex FPGA timing closure; DS edge-aligns DQ data
ASIL-B certified SafeBoot Detects configuration corruption and reports initialization failures, enabling fail-safe boot path selection in AUTOSAR MCAL
Flexible sector architecture Supports hybrid split (top + bottom 4 KB sectors) for bootloader + parameter storage, preserving 256 KB sector efficiency for firmware
OTP Secure Silicon Region (SSR) 1024-byte one-time-programmable area for cryptographic keys or calibration data, isolated from main array erase cycles
Endurance Flex architecture Separates high-endurance (300k-cycle) 4 KB sectors from standard (2.56M-cycle) main array, optimizing wear leveling for OTA update partitions

Applications

ADAS Domain Controller Boot Memory Automotive Powertrain ECU Firmware Storage

Use Scenario: Storing boot ROM, safety monitor firmware, and diagnostic code in radar/EPS ECUs requiring AEC-Q100 Grade 1 operation.

IC Role / Device Role / Timing Role: Primary nonvolatile code storage with SafeBoot validation and SECDED ECC correction during fetch.

Use Value: Enables deterministic <100 ms boot time via linear burst reads at 332 MBps, meeting ISO 26262 startup timing constraints.

Use Scenario: Holding calibrated engine control maps and real-time update partitions in gasoline/diesel ECUs exposed to under-hood thermal stress.

IC Role / Device Role / Timing Role: High-reliability firmware repository with hybrid sector architecture isolating 4 KB calibration tables from 256 KB main image.

Use Value: Achieves 25-year data retention at +125 °C and 300k-cycle endurance for frequent map updates without compromising main firmware longevity.

Central Gateway Secure Boot Image Electric Vehicle Battery Management System (BMS)

Use Scenario: Storing signed boot images and root-of-trust keys in vehicle gateways where secure boot chain integrity is mandated.

IC Role / Device Role / Timing Role: Trusted execution environment anchor with OTP SSR for immutable key storage and interface CRC for bus tamper detection.

Use Value: Prevents unauthorized firmware injection via hardware-enforced CRC on all host-to-flash commands, satisfying UNECE R155 CSMS requirements.

Use Scenario: Retaining cell balancing algorithms and fault logs in high-voltage BMS modules operating across wide ambient ranges.

IC Role / Device Role / Timing Role: Radiation-tolerant, high-temp nonvolatile memory supporting ASIL-D software partitioning with ECC-protected runtime data logging.

Use Value: Delivers 2.56M-cycle endurance and 25-year retention even after repeated thermal cycling between –40 °C and +105 °C in battery pack environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NOR flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
Cypress S26HL02GTFAFII100 Same 2 Gb DDP architecture, but HL-T (3.0 V) supply; no ASIL-B certification; lower max read rate (266 MBps) Limited to industrial (-40 °C to +105 °C), not AEC-Q100 qualified; lacks SafeBoot and interface CRC Select only for cost-sensitive non-automotive designs where 3.0 V rails and absence of functional safety features are acceptable
Winbond W25Q80EW 8 Mb SPI NOR (not HYPERBUS™); no DDR interface; no ASIL support; 100k-cycle endurance; 1.8 V only Targeted at microcontroller boot loaders, not high-bandwidth ECU firmware; no sector protection flexibility Use only for simple MCU-based systems with minimal code size and no functional safety or high-speed read requirements

Compared with S26HS02GTFPBHM053, the Cypress alternative trades ASIL-B compliance and 332 MBps performance for broader voltage tolerance, while Winbond offers low-cost simplicity at the expense of scalability, safety, and bandwidth-making S26HS02GTFPBHM053 the sole fit for ASIL-B automotive firmware storage.

Availability

S26HS02GTFPBHM053 is available at Aetrix Electronics and suitable for ADAS domain controllers, automotive powertrain ECUs, central gateway modules, and electric vehicle BMS requiring stable component supply with full AEC-Q100 Grade 1 qualification and ISO 26262 traceability.

Supply support for S26HS02GTFPBHM053 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and quality certifications including IATF 16949.

The SEMPER™ Flash product line targets functional safety-critical automotive applications, delivering high-reliability NOR flash with integrated safety mechanisms, optimized for code execution and secure firmware updates in ASIL-B and ASIL-D systems.

FAQ

Does S26HS02GTFPBHM053 support both HYPERBUS™ and SPI interfaces simultaneously?

No. The device defaults to legacy ×1 SPI on power-up but can be configured to operate exclusively in HYPERBUS™ mode via status register settings. Both interfaces share the same DQ[7:0], CS#, CK/CK#, and DS pins, so hardware design must route for HYPERBUS™-capable layout (e.g., matched trace lengths, DS routing). Switching modes requires issuing specific unlock and configuration commands.

What is the purpose of the RSTO# pin, and how does it differ from RESET#?

RSTO# is an open-drain output that signals internal power-on reset (POR) completion, allowing synchronization of system-level reset sequencing. RESET# is an input that triggers a hardware-initiated POR. While RESET# forces immediate initialization, RSTO# asserts LOW during POR and releases to high-Z afterward-enabling external logic to delay host processor release until flash is fully ready, preventing premature access.

How does the 4 KB sector architecture benefit OTA firmware updates?

The 32 × 4 KB sectors-configurable at top/bottom or both-provide dedicated, fast-erasing regions for version metadata, signature verification keys, and rollback counters. With 300,000 program-erase cycles and sub-100 ms erase time, they enable robust dual-bank OTA schemes without wearing out the main 256 KB firmware sectors, extending overall flash lifetime in field-deployed vehicles.

Is the OTP Secure Silicon Region (SSR) accessible after final programming?

Yes, the 1024-byte SSR is readable at any time but programmable only once per byte. Once written, bits cannot be reprogrammed (no erase function), making it suitable for immutable keys or calibration constants. Access requires unlocking via specific command sequences and is protected by hardware write-protection fuses, preventing accidental or malicious overwrite during normal operation.

S26HS02GTFPBHM053 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SEMPER™
Package/Case:
24-VBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NOR (SLC)
Memory Size:
2Gbit
Memory Organization:
256M x 8
Memory Interface:
HyperBus
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 2V
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-FBGA (8x8)

S26HS02GTFPBHM053 FAQ

1.How can I place an order for S26HS02GTFPBHM053 through Aetrix?

Please submit a Request for Quotation (RFQ) for S26HS02GTFPBHM053 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S26HS02GTFPBHM053 reliable?

The price and inventory of S26HS02GTFPBHM053 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26HS02GTFPBHM053 is usually 5 days.

3.What payment methods are accepted for S26HS02GTFPBHM053?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26HS02GTFPBHM053 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S26HS02GTFPBHM053?

S26HS02GTFPBHM053 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S26HS02GTFPBHM053 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S26HS02GTFPBHM053?

For technical support, including S26HS02GTFPBHM053 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26HS02GTFPBHM053 requirements.

6.How does Aetrix verify that S26HS02GTFPBHM053 is sourced from the original manufacturer or authorized distributors?

All S26HS02GTFPBHM053 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26HS02GTFPBHM053 meets industry standards.

7.What is the process for return or replacement of S26HS02GTFPBHM053?

All S26HS02GTFPBHM053 units undergo pre-shipment inspection (PSI). If there is an issue with S26HS02GTFPBHM053, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S26HS02GTFPBHM053 part is unused and in its original packaging.

Return procedure for S26HS02GTFPBHM053:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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