Nexperia USA Inc. S26KL128SDABHA030

Overview

S26KL128SDABHA030 from Infineon is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S26KL128SDABHA030 datasheet, S26KL128SDABHA030 pinout, S26KL128SDABHA030 application, or S26KL128SDABHA030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access, 118 ns CS# to first word), RWDS-synchronized DDR read alignment, configurable burst modes (16/32/64-byte wrapped or linear), low-power deep power-down (4 µA), and AEC-Q100 grade 3 qualification for automotive boot code storage.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS timing alignment, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ technology for high-density NOR storage and supports both volatile and non-volatile sector protection schemes.

HYPERBUS™ protocol enables command/address/data multiplexing over the same 8-bit DQ bus using DDR edge-aligned transfers. Read operations use center-aligned clock edges for command/address and edge-aligned RWDS transitions for data capture, enabling deterministic 5–16 clock-cycle initial latency and continuous burst streaming with automatic page prefetch during linear mode.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial NOR flash applications.

Compared with S26KS128SDABHA020, the S26KL128SDABHA030 adds AEC-Q100 Grade 3 qualification and tighter industrial temp limits; versus W25Q128JVSIM, it provides 2.5× higher read bandwidth, integrated ECC, and deterministic timing essential for real-time XIP execution.

Availability

S26KL128SDABHA030 is available at Aetrix Electronics and suitable for automotive ADAS modules, industrial PLCs, medical imaging subsystems, and 5G radio units requiring stable component supply across extended product lifecycles.

Supply support for S26KL128SDABHA030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing infrastructure.

This part belongs to the HYPERFLASH™ family, designed specifically to replace parallel NOR and legacy serial flash in high-performance embedded systems requiring XIP, low latency, and automotive-grade reliability.

FAQ

What is the minimum wake-up time from Deep Power-Down mode?

The S26KL128SDABHA030 requires 300 µs to exit Deep Power-Down mode and become ready for read operations. This value is fixed and independent of temperature or voltage within specified operating ranges. The device asserts RSTO# during wake-up if configured, and INT# remains inactive until the first valid read completes. No host-side delay calibration is needed-the timing is guaranteed per datasheet Table 3.

Does this device support true XIP (eXecute-In-Place) operation?

Yes, the S26KL128SDABHA030 supports deterministic XIP via its HYPERBUS™ DDR interface and DCARS timing. Its 96 ns random access time and 333 MBps sustained read rate enable direct CPU instruction fetch without intermediate buffering. The RWDS-synchronized data capture eliminates timing uncertainty, making it suitable for ARM Cortex-R and MIPS-based real-time controllers where cache misses must resolve within strict deadlines.

How is sector protection configured-via hardware pins or software commands?

Sector protection is configured exclusively via software commands written to the device's address space, using volatile lock bits (cleared on power cycle) and non-volatile lock bits (persistent through power cycles). No hardware pins are used. Protection status is verified by reading the Sector Protection Register (SPR) at address 0x0000_0050. Both methods support individual 256-KB sector control and optional 4-KB parameter sector locking.

What is the maximum allowable clock duty cycle deviation for CK/CK#?

The CK/CK# differential clock pair must maintain a duty cycle between 45% and 55% across all operating conditions, as specified in datasheet Section 12.2 AC Characteristics. Deviations beyond this range risk violating setup/hold margins for command/address latching in the Host Interface Controller. The device does not include internal duty cycle correction; system-level clock generation must meet this spec, especially under PVT variation.