Infineon Technologies S26KL128SDABHB023

Overview

S26KL128SDABHB023 from Infineon is a 128-Mb (16-MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package for embedded boot code storage.

For engineers reviewing the S26KL128SDABHB023 datasheet, S26KL128SDABHB023 pinout, S26KL128SDABHB023 application, or S26KL128SDABHB023 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access, 118 ns CS# to first word), RWDS-synchronized DDR read alignment, configurable burst length (16/32/64 bytes), deep power-down current (4 µA), and AEC-Q100 grade 3 qualification for automotive use cases.

Technical Context

The device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with read data edge-aligned to RWDS transitions and command/address center-aligned to CK/CK# edges. Its dual-controller architecture separates host interface control (HIC) for signal timing and data transfer from embedded algorithm control (EAC) managing program/erase sequences.

It supports both wrapped and linear burst reads, with automatic page prefetch during linear mode enabling sustained 333 MBps throughput. The MIRRORBIT™ core enables 16-bit word-wide addressing and 32-byte page granularity, while ECC and CRC ensure data integrity across 100,000 program/erase cycles and 20-year retention.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8-mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL128SDABHB023, the Cypress variant offers identical performance and drop-in compatibility, while the Macronix part trades interface simplicity for >8× lower bandwidth-making it viable only where HYPERBUS™ infrastructure is absent and latency budgets permit.

Availability

S26KL128SDABHB023 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLCs, 5G radio units, and medical imaging systems requiring stable component supply across extended product lifecycles.

Supply support for S26KL128SDABHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global R&D and manufacturing facilities.

This device belongs to the HYPERFLASH™ family, designed specifically to replace parallel NOR flash in high-performance embedded systems requiring low-pin-count, high-bandwidth non-volatile memory with deterministic timing.

FAQ

What is the minimum supported VCCQ voltage for S26KL128SDABHB023?

The device requires 1.71 V to 1.95 V for VCCQ (I/O supply) when operating in 1.8 V mode. Operation below 1.71 V violates absolute maximum ratings and may cause RWDS timing violations or command decode failures. This range ensures stable DDR signaling margins across temperature and process variation.

Does S26KL128SDABHB023 support octal SPI or QPI modes?

No. S26KL128SDABHB023 implements only the HYPERBUS™ DDR interface with mandatory CK/CK#, RWDS, and CS# signals. It does not support SPI, QPI, or xSPI command sets. Interface compatibility is limited to SoCs with native HYPERBUS™ controllers such as NXP i.MX 8M Plus or Renesas RZ/G2L.

How is the 512-byte program buffer utilized during write operations?

The buffer accepts up to 512 bytes of data in a single write transaction, then executes internal page programming in ~475 µs. Host software must issue a "buffer write" command followed by address and data, then poll INT# or status register for completion-enabling 1 MBps effective write speed versus 4 KBps for single-word writes.

Can RSTO# be disabled or repurposed as a general-purpose output?

No. RSTO# is a dedicated open-drain output with fixed functionality: it asserts LOW for a user-configurable duration (via configuration register) upon power-on reset detection. It cannot be disabled or reassigned; its timing and drive strength are hardware-defined to meet system-level reset sequencing requirements.