Nexperia USA Inc. S26KL128SDABHB030

Overview

S26KL128SDABHB030 from Infineon is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package for embedded boot code storage.

For engineers reviewing the S26KL128SDABHB030 datasheet, S26KL128SDABHB030 pinout, S26KL128SDABHB030 application, or S26KL128SDABHB030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access, 118 ns CS# to first word), RWDS-synchronized DDR read alignment, sector protection granularity, deep power-down current (4 µA), and AEC-Q100 grade 3 qualification for automotive control modules.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-synchronized data transfer, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ technology for high-density NOR storage and supports both wrapped (16/32/64-byte) and linear burst modes.

HYPERBUS™ protocol enables command/address/data multiplexing over the same 8-bit DQ bus using DDR edge-aligned transfers. Read operations require initial latency of 5–16 clock cycles, followed by center-aligned data output referenced to CK/CK#, with RWDS toggling on each data edge to indicate valid read windows.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL128SDABHB030, the Cypress alternative maintains pin and timing compatibility but sacrifices 1.8 V operation and differential clock noise immunity, while the Winbond part requires complete interface redesign and delivers less than 40% of the sustained read bandwidth.

Availability

S26KL128SDABHB030 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, 5G radio units, and medical imaging systems requiring stable component supply, AEC-Q100 qualification, and guaranteed 20-year data retention.

Supply support for S26KL128SDABHB030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

The HYPERFLASH™ product line was designed specifically for high-speed, low-pin-count boot memory in automotive and industrial real-time systems, addressing the need for deterministic DDR flash access without complex routing or signal integrity overhead.

FAQ

What is the minimum wake-up time from Deep Power-Down mode?

The S26KL128SDABHB030 requires 300 µs to exit Deep Power-Down mode and become ready for read access. This wake-up sequence is fully internal and does not require external clock stabilization or initialization commands - the device asserts RSTO# if configured, and RWDS becomes active after the delay. The timing is guaranteed across the full industrial temperature range (–40°C to +85°C).

Does this device support true random access to any 16-bit word address?

No - the S26KL128SDABHB030 accesses data in 32-byte pages aligned to 32-byte boundaries. Each random read targets a full page, and the initial latency (5–16 clocks) includes address decoding and half-page selection. Word-level addressing is supported logically, but physical access is page-granular; unaligned reads still incur full page latency and return the entire 32-byte block.

How is ECC handled during read operations?

ECC is applied automatically on every read: 1-bit errors are corrected transparently in hardware, and 2-bit errors trigger the INT# pin assertion and set an internal status flag readable via command query. No software intervention is needed for correction, but host firmware must monitor INT# and read status registers to detect and log uncorrectable errors for system-level fault reporting.

Can RSTO# be disabled or repurposed?

RSTO# is a dedicated open-drain output with user-configurable LOW pulse duration (programmable via status register bits). It cannot be disabled or reassigned as a general-purpose I/O. Its sole function is to generate a system-level reset pulse synchronized to device power-up or recovery from Deep Power-Down, ensuring deterministic SoC reset timing independent of external reset ICs.