Infineon Technologies S26KL128SDABHN020

Overview

S26KL128SDABHN020 from Infineon Technologies is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and read data strobe (RWDS). It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package - deployed in automotive ADAS domain controllers for fast boot code execution.

For engineers reviewing the S26KL128SDABHN020 datasheet, S26KL128SDABHN020 pinout, S26KL128SDABHN020 application, or S26KL128SDABHN020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), RWDS-synchronized DDR read alignment, sector protection granularity, deep power-down current (4 µA), and AEC-Q100 grade 3 qualification status.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS timing alignment, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ floating-gate technology enabling 100,000 program/erase cycles and 20-year data retention.

HYPERBUS™ protocol enforces strict DDR timing: command/address and data are edge-aligned to CK/CK#, with read data edge-aligned to RWDS transitions. Burst modes (wrapped/linear/hybrid) are transaction-selectable, and initial latency ranges from 5–16 clock cycles depending on configuration - critical for deterministic boot timing in safety-critical systems.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL128SDABHN020, the Cypress-branded variant offers identical functionality and qualification, while the HV020 variant trades MSL2 handling for broader reflow process tolerance - both preserve HYPERBUS™ timing, ECC, and sector protection integrity.

Availability

S26KL128SDABHN020 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, medical imaging boot systems, and avionics display units requiring stable component supply and long-term lifecycle support.

Supply support for S26KL128SDABHN020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certification under ISO/TS 16949.

This device belongs to Infineon's HYPERFLASH™ product line, engineered specifically for high-bandwidth, low-pin-count code storage in safety-critical automotive and industrial systems requiring deterministic boot and robust data integrity.

FAQ

What voltage levels does S26KL128SDABHN020 support for core and I/O operation?

The device operates with 1.8 V VCC/VCCQ for both core and I/O, enabling 166 MHz DDR operation and 333 MBps read throughput. It is not rated for 3.0 V operation - only the S26KL128Sxxx010 variant supports 3.0 V I/O at reduced 100 MHz clock rate.

How is RWDS used during read operations, and what timing relationship does it maintain?

RWDS is an output strobe edge-aligned with read data on DQ[7:0]; its rising and falling edges indicate valid data windows during DDR reads. The host uses RWDS transitions-not CK-to latch data, ensuring timing margin independence from clock skew in high-speed layouts.

Does S26KL128SDABHN020 support hardware-based sector protection, and how is it configured?

Yes - it provides volatile (lock bits cleared on power cycle) and non-volatile (persistent across power cycles) sector protection for each 256-KB sector. Configuration is performed via standard CFI commands written to the device's command register, with no external hardware required.

What is the wake-up time from Deep Power-Down mode, and is it consistent across temperature?

Wake-up from Deep Power-Down requires 300 µs maximum, specified over the full industrial temperature range (–40°C to +85°C). This value is guaranteed and does not vary with ambient temperature or supply voltage within rated operating conditions.