Infineon Technologies S26KL128SDABHN030

Overview

S26KL128SDABHN030 from Infineon is a 128 Mb (16 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package for embedded boot code storage.

For engineers reviewing the S26KL128SDABHN030 datasheet, S26KL128SDABHN030 pinout, S26KL128SDABHN030 application, or S26KL128SDABHN030 equivalent, key selection criteria include DDR burst timing compliance, RWDS-synchronized read latency (96 ns initial access), sector protection granularity, deep power-down current (4 µA), and AEC-Q100 grade compatibility for automotive firmware storage.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and data transfer synchronization with CK/CK#, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ charge-trap technology enabling 100,000 program/erase cycles and 20-year data retention.

HYPERBUS™ protocol enables command/address/data multiplexing over the same 8-bit DQ bus using DDR edge-aligned transfers; RWDS output is edge-aligned to CK transitions during reads, and DCARS (DDR Center-Aligned Read Strobe) ensures precise data capture timing. Burst modes-wrapped (16/32/64 bytes) or linear-are configurable per transaction.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with S26KL128SDABHN030, the Cypress alternative offers identical interface and density but omits extended temperature and automotive qualification, while the Macronix part trades HYPERBUS™ performance and integrated ECC for SPI compatibility and lower system integration complexity.

Availability

S26KL128SDABHN030 is available at Aetrix Electronics and suitable for automotive ECU boot memory, industrial PLC firmware storage, medical imaging system code storage, and 5G baseband processor flash requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S26KL128SDABHN030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and communications markets.

The HYPERFLASH™ product line targets high-performance embedded systems requiring fast, reliable, and pin-efficient non-volatile memory for boot code and firmware, especially where DDR interface bandwidth and ECC integrity are critical.

FAQ

What is the minimum wake-up time from Deep Power-Down mode?

The S26KL128SDABHN030 requires exactly 300 µs to resume operation after exiting Deep Power-Down mode, as specified in Table 3 of the datasheet. This fixed wake-up latency is independent of temperature or voltage and must be accounted for in host controller timing budgets before issuing the first command post-wake-up.

Does this device support both 1.8 V and 3.0 V I/O operation?

No - S26KL128SDABHN030 is a 1.8 V I/O variant only, indicated by the 'D' in the part number suffix. It requires 1.8 V VCCQ and uses differential CK/CK# signaling. The 3.0 V I/O variants (e.g., S26KL128SAxx) use single-ended CK and different timing parameters.

How is ECC implemented and what error scenarios does it cover?

ECC is implemented in hardware using Hamming code: it corrects any single-bit error and detects any double-bit error within a 512-byte sector. It operates automatically during read operations and does not require host software intervention. ECC coverage applies to main array reads only-not to ID-CFI or one-time-programmable regions.

Can RSTO# be disabled or configured as a general-purpose output?

No - RSTO# is a dedicated open-drain reset output with user-configurable LOW pulse width (via configuration register). It cannot be repurposed as a GPIO. Its function is strictly to generate a system-level power-on reset signal synchronized to internal device initialization, and it asserts only during power-up or hardware reset events.