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Infineon Technologies S26KL128SDABHV030
- Part No.:
- S26KL128SDABHV030
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 24-VBGA
- Datasheet:
-
S26KL128SDABHV030.pdf
- Description:
- IC FLASH 128MBIT HYPERBUS 24FBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,942
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Product details
Overview
S26KL128SDABHV030 from Infineon is a 128-Mb (16-MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, supporting 1.8 V I/O and differential clock (CK/CK#), delivering 333 MBps sustained read throughput at 166 MHz, 96 ns initial random access time, and ECC 1-bit correction/2-bit detection - deployed in automotive ADAS domain controllers for boot code storage and real-time firmware updates.
For engineers reviewing the S26KL128SDABHV030 datasheet, S26KL128SDABHV030 pinout, S26KL128SDABHV030 application, or S26KL128SDABHV030 equivalent, key selection criteria include HYPERBUS™ timing compliance (tACC ≤ 96 ns), RWDS-synchronized DDR read strobe behavior, sector protection granularity (256 KB uniform + optional 4 KB parameter sectors), and AEC-Q100 Grade 2 qualification (–40°C to +105°C).
Technical Context
This device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfer, while Embedded Algorithm Controller (EAC) executes non-volatile programming/erase sequences autonomously. It uses MIRRORBIT™ technology for high-density NOR array organization and supports both wrapped (16/32/64-byte) and linear burst modes.
HYPERBUS™ protocol operates over an 8-bit DDR data bus (DQ[7:0]) with center-aligned command/address and edge-aligned read data relative to RWDS transitions. Initial latency is configurable from 5–16 clock cycles, and read operations are page-based (32-byte aligned), with half-page (16-byte) addressing granularity and automatic next-page prefetch during linear bursts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128 Mb (16 MB) - fixed capacity for boot image and firmware partitioning in resource-constrained ECUs. |
| Interface Standard | HYPERRBUS™ DDR - 8-bit bidirectional data bus with differential clock (CK/CK#) and RWDS strobe, reducing pin count vs. parallel NOR. |
| Max Read Throughput | 333 MBps - achieved at 166 MHz clock with 2 transfers/cycle on DQ[7:0], enabling fast application loading in boot ROM scenarios. |
| Initial Access Latency | 96 ns (tACC) - defines minimum time from CS# assertion to first valid data, critical for deterministic boot timing. |
| Operating Voltage | 1.8 V VCC/VCCQ - low-voltage I/O compatible with modern SoC memory controllers; supports industrial (+105°C) and automotive Grade 2 operation. |
| Data Integrity | ECC 1-bit correction / 2-bit detection + CRC - hardware-assisted error handling without host CPU overhead for safety-critical firmware storage. |
| Endurance & Retention | 100,000 program/erase cycles; 20-year data retention - validated for long-life automotive ECU deployments with infrequent OTA updates. |
Pinout & Package
Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Reference for DDR sampling of command/address/data; enables precise timing margin control in high-speed reads. |
| CS# | Chip select (active-low) | Enables device communication; must be asserted before any transaction and held stable during burst operations. |
| RWDS | Read data strobe output | Source-synchronous output indicating valid DQ data edges during read; used by host to latch data without external delay tuning. |
| DQ[7:0] | DDR bidirectional data bus | Transfers 16-bit words across two clock edges per cycle; shared for commands, addresses, and data in multiplexed protocol. |
| INT# | Interrupt output | Signals host on ECC error detection or busy-to-ready transition; eliminates polling overhead in safety firmware. |
| RSTO# | Reset output | User-configurable open-drain reset pulse for system-level power-on initialization; synchronized to internal state machine readiness. |
Key Features
| Feature | Design Value |
|---|---|
| HYPERBUS™ DDR interface | Reduces signal count to 12 pins (vs. ≥30 for legacy parallel NOR), simplifying PCB routing and improving signal integrity at >100 MHz. |
| Configurable burst mode | Supports wrapped (16/32/64-byte) or linear bursts per transaction - enables optimal cache-line alignment and DMA buffer efficiency. |
| Advanced sector protection | Volatile/non-volatile lock bits per 256-KB sector plus eight 4-KB parameter sectors - allows independent firmware and calibration data write-protection. |
| Low-power operation | 25 µA standby, 8 µA deep power-down (typical) - extends battery life in always-on automotive modules without wake-up latency penalty. |
| One-time programmable (OTP) array | 1024-byte dedicated OTP space - stores immutable keys, calibration constants, or security certificates outside main flash array. |
Applications
| Automotive ADAS Domain Controller | Industrial PLC Firmware Storage |
|---|---|
Use Scenario: Stores boot ROM, safety monitor firmware, and sensor fusion algorithms in centralized ADAS ECU with ISO 26262 ASIL-B compliance requirements. IC Role / Device Role / Timing Role: Primary non-volatile code storage with deterministic 96 ns tACC and ECC-protected execution-in-place (XIP) capability. Use Value: Enables secure, fast boot under AEC-Q100 Grade 2 (–40°C to +105°C) conditions while meeting ASIL-B fault coverage targets via hardware ECC. | Use Scenario: Holds field-upgradable ladder logic, motion control profiles, and HMI assets in modular PLC backplane systems requiring long-term reliability. IC Role / Device Role / Timing Role: High-reliability firmware repository with 100,000-cycle endurance and 20-year retention for unattended factory deployment. Use Value: Eliminates external error-checking logic and reduces BOM cost via integrated CRC and ECC, while supporting hot-swappable module reprogramming. |
| Medical Imaging Boot Memory | 5G Baseband Radio Unit |
Use Scenario: Stores certified diagnostic imaging boot loader and FPGA configuration bitstream in Class II medical devices with strict regulatory traceability. IC Role / Device Role / Timing Role: Secure, tamper-resistant boot memory with OTP key storage and non-volatile sector locks for audit-log partitioning. Use Value: Meets IEC 62304 software lifecycle requirements through hardware-enforced write protection and immutable calibration data storage. | Use Scenario: Hosts L1/L2 baseband processor firmware and real-time radio stack in outdoor 5G RU units exposed to wide thermal cycling. IC Role / Device Role / Timing Role: High-throughput code fetch engine supporting 333 MBps DDR reads to feed multi-core DSPs without memory bottleneck. Use Value: Delivers consistent performance across –40°C to +105°C operating range with no derating, enabling compact thermal design in sealed RU enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY15B104QN-PSOC | 4-Mb Quad SPI FRAM; no erase latency, unlimited endurance, but max 40 MBps throughput and no HYPERBUS™ interface. | Suitable for frequent small-data logging, not boot code or high-bandwidth XIP. | Select only when ultra-fast writes and infinite endurance outweigh bandwidth needs. |
| S26KS128SDABHV030 | Pin-compatible 128-Mb variant with 3.0 V I/O (single-ended clock), lower max throughput (200 MBps), same package and feature set. | Used where legacy 3.0 V SoC interfaces exist and 166 MHz timing margin is unavailable. | Choose for backward compatibility with existing 3.0 V HYPERBUS™ designs; not for new 1.8 V high-speed systems. |
Compared with CY15B104QN-PSOC, S26KL128SDABHV030 delivers 8× higher read bandwidth and automotive-grade temperature support but requires erase cycles. Against S26KS128SDABHV030, it enables +66% throughput and tighter timing margins at 1.8 V, justifying migration in new designs targeting ADAS or 5G RU platforms.
Availability
S26KL128SDABHV030 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, medical imaging boot memory, and 5G baseband radio units requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for S26KL128SDABHV030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.
The HYPERFLASH™ product line targets high-performance embedded systems requiring fast, deterministic, and safety-certifiable non-volatile code storage - specifically engineered for automotive, industrial, and communications infrastructure applications demanding AEC-Q100 qualification and ECC-enabled reliability.
FAQ
What is the purpose of the RWDS signal in S26KL128SDABHV030?
RWDS (Read Data Strobe) is a source-synchronous output that indicates valid data edges on DQ[7:0] during read operations. It is referenced to CK/CK# transitions and enables the host controller to latch data without external delay calibration. RWDS is active only during read bursts and is not used for write operations, distinguishing HYPERFLASH™ from conventional DDR memories.
Does S26KL128SDABHV030 support execute-in-place (XIP) operation?
Yes, S26KL128SDABHV030 supports XIP via its HYPERBUS™ DDR interface with deterministic 96 ns access time and configurable burst lengths. The device delivers continuous 333 MBps read throughput with linear burst mode and automatic next-page prefetch, allowing direct instruction execution from flash without copying to RAM - verified in Infineon's reference designs for AURIX™ TC3xx microcontrollers.
How does the embedded algorithm controller (EAC) affect firmware update timing?
The EAC handles all program/erase operations autonomously, eliminating host CPU involvement during flash modifications. Sector erase takes 930 ms (typical), and 512-byte buffer programming completes in 475 µs. These times are fixed and documented in the datasheet; host software must poll INT# or RSTO# to detect completion rather than managing low-level timing sequences.
Can S26KL128SDABHV030 operate in both 1.8 V and 3.0 V I/O modes?
No - S26KL128SDABHV030 is a 1.8 V I/O variant only, with differential clock inputs (CK/CK#) and mandatory 1.8 V VCCQ supply. The 3.0 V counterpart is S26KS128SDABHV030 (single-ended clock). Mixing voltage domains or attempting 3.0 V signaling will violate absolute maximum ratings and cause functional failure or permanent damage.
S26KL128SDABHV030 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HYPERFLASH™ KL
- Package/Case:
- 24-VBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NOR
- Memory Size:
- 128Mbit
- Memory Organization:
- 16M x 8
- Memory Interface:
- HyperBus
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 96 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 24-FBGA (6x8)
S26KL128SDABHV030 FAQ
1.How can I place an order for S26KL128SDABHV030 through Aetrix?
Please submit a Request for Quotation (RFQ) for S26KL128SDABHV030 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S26KL128SDABHV030 reliable?
The price and inventory of S26KL128SDABHV030 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KL128SDABHV030 is usually 5 days.
3.What payment methods are accepted for S26KL128SDABHV030?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KL128SDABHV030 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S26KL128SDABHV030?
S26KL128SDABHV030 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S26KL128SDABHV030 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S26KL128SDABHV030?
For technical support, including S26KL128SDABHV030 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KL128SDABHV030 requirements.
6.How does Aetrix verify that S26KL128SDABHV030 is sourced from the original manufacturer or authorized distributors?
All S26KL128SDABHV030 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KL128SDABHV030 meets industry standards.
7.What is the process for return or replacement of S26KL128SDABHV030?
All S26KL128SDABHV030 units undergo pre-shipment inspection (PSI). If there is an issue with S26KL128SDABHV030, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S26KL128SDABHV030 part is unused and in its original packaging.
Return procedure for S26KL128SDABHV030:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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