Spansion S26KL256SDABHI030

Overview

S26KL256SDABHI030 from Infineon is a 256 Mb (32 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S26KL256SDABHI030 datasheet, S26KL256SDABHI030 pinout, S26KL256SDABHI030 application, or S26KL256SDABHI030 equivalent, key selection criteria include DDR burst timing compliance, RWDS-synchronized read latency (96 ns initial access), sector protection granularity, deep power-down current (4 µA), and AEC-Q100 grade compatibility for automotive control units.

Technical Context

This device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with dual-edge sampling referenced to CK/CK#. The embedded algorithm controller (EAC) autonomously executes program/erase sequences without host intervention, using internal command memory and status registers.

It supports configurable burst modes-wrapped (16/32/64 bytes) or linear-with automatic page prefetch during linear reads to sustain 333 MBps throughput. DCARS (DDR Center-Aligned Read Strobe) aligns read data edges to RWDS transitions, while INT# signals ECC errors or busy-to-ready transitions.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, RoHS-compliant, with ball map optimized for signal integrity and thermal dissipation in dense PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed serial NOR flash applications.

Compared with S26KL256SDABHI020 and S26KS256SDABHI030, the S26KL256SDABHI030 uniquely balances automotive-grade reliability, 166 MHz DDR performance, and minimal 24-ball footprint-making it optimal for next-gen ADAS and 5G infrastructure where thermal robustness and bandwidth coexist.

Availability

S26KL256SDABHI030 is available at Aetrix Electronics and suitable for automotive ADAS control units, industrial PLC firmware storage, medical imaging boot memory, and 5G baseband radio controllers requiring stable component supply across extended lifecycles.

Supply support for S26KL256SDABHI030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS16949.

The HYPERFLASH™ product line targets high-performance embedded systems needing fast, deterministic non-volatile code storage-specifically designed to replace parallel NOR and QSPI flash in automotive, industrial, and communications applications demanding >200 MBps read bandwidth.

FAQ

What is the minimum wake-up time from Deep Power-Down mode?

The S26KL256SDABHI030 requires 300 µs to exit Deep Power-Down mode and become ready for read operations. This timing is guaranteed across the full industrial temperature range (–40°C to +85°C) and is independent of VCC ramp rate. During wake-up, the device internally restores internal biasing and reference voltages before asserting RDY#, ensuring deterministic recovery without host polling delays.

Does this device support QSPI-compatible command sets?

No, the S26KL256SDABHI030 uses the proprietary HYPERBUS™ protocol and does not support QSPI command opcodes or quad I/O signaling. It requires a HYPERBUS™-capable memory controller (e.g., Infineon AURIX™ TC3xx, NXP S32K3, or custom FPGA IP) that implements CK/CK# differential clocking, RWDS synchronization, and DDR command/data framing on the 8-bit DQ bus.

How is ECC handled during read operations?

ECC checking is performed automatically on every read access. If a 1-bit error is detected, it is corrected transparently and the corrected data is output via DQ; if a 2-bit error is detected, the INT# pin asserts low and the status register flags the error. No host software intervention is required for correction, and the ECC engine operates entirely in hardware with zero latency impact on read throughput.

Can RSTO# be disabled or configured as a general-purpose output?

RSTO# is a dedicated open-drain output with user-configurable pulse width (via configuration register), but it cannot be repurposed as a GPIO. Its function is strictly defined as a system-level power-on reset signal, driven low for a programmable duration (1–255 µs) after power stabilization. The pin has no alternate functions and remains inactive (high-impedance) unless explicitly triggered by internal power sequencing logic.