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Nexperia USA Inc. S26KL256SDABHN020

Part No.:
S26KL256SDABHN020
Manufacturer:
Nexperia USA Inc.
Category:
Memory
Package:
-
Datasheet:
AetrixS26KL256SDABHN020.pdf
Description:
S26KL256S - 256-Mbit HYPERFLASH
Quantity:
Payment:
Payment
Shipping:
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Inventory:878

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Product details

Overview

S26KL256SDABHN020 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), RWDS read strobe, and 24-ball FBGA package. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sectors with optional 4-KB parameter sectors, and operates across –40°C to +105°C (Industrial Plus grade).

For engineers reviewing the S26KL256SDABHN020 datasheet, S26KL256SDABHN020 pinout, S26KL256SDABHN020 application, or S26KL256SDABHN020 equivalent, key selection criteria include DDR burst timing compliance, RWDS-synchronized read latency (96 ns tACC), ECC 1-bit correction/2-bit detection, low-power deep power-down (4 µA), and AEC-Q100 Grade 2 qualification for automotive control modules.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfers, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ technology for high-density NOR storage and supports both wrapped (16/32/64-byte) and linear burst modes.

HYPERBUS™ protocol enables command/address/data multiplexing over the same 8-bit DQ bus in DDR fashion - two 8-bit transfers per clock cycle - with CK/CK# referenced edge-aligned sampling and RWDS edge-aligned read-data capture. Initial random access requires 5–16 clock cycles of latency before first data output.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density256 Mb (32 MB), organized as 32 M × 8-bit words
Interface StandardHYPERTBUS™ DDR: 8-bit bidirectional DQ bus, differential CK/CK#, RWDS strobe, CS#, RSTO#, INT#
Max Read Throughput333 MBps sustained (166 MHz × 2 transfers/cycle × 1 byte)
Random Access Time96 ns (tACC), with 5–16 clock-cycle initial latency
Power ModesActive clock stop (12 mA), Standby (25 µA), Deep Power-Down (4 µA @ 85°C)
Data IntegrityECC 1-bit correction / 2-bit detection, CRC support, 100,000 P/E cycles, 20-year retention
Operating Temp–40°C to +105°C (Industrial Plus), AEC-Q100 Grade 2 qualified

Pinout & Package

Package: 24-ball Fortified BGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
CK / CK#Differential Clock InputReference for DDR sampling; CK rising/falling edges define command/address/data capture windows
DQ[7:0]Bi-directional Data BusTransfers commands, addresses, and 8-bit data on both clock edges; supports 16-bit word alignment
RWDSRead Data Strobe OutputEdge-aligned output indicating valid read data presence; used only during reads, not writes
CS#Chip Select InputActive-low enable; controls entry into standby/deep power-down when HIGH
INT#Interrupt OutputSignals Busy→Ready transition or ECC error detection event to host controller
RSTO#Reset OutputUser-configurable open-drain reset pulse for system-level power-on initialization

Key Features

FeatureDesign Value
DDR Burst ArchitectureSimultaneous page fetch and burst output enables sustained 333 MBps linear reads without CPU intervention
Configurable Burst ModePer-transaction selection between wrapped (16/32/64-byte) and linear bursts, plus hybrid mode
Hardware ECC EngineOn-the-fly 1-bit correction / 2-bit detection applied to all read data, reducing host software overhead
Volatile & Non-volatile ProtectionIndependent sector lock bits (volatile SRAM-based and non-volatile OTP) prevent accidental erase/write
Low-Power Wake-upDeep power-down exit requires only 300 µs; no external wake-up signal needed

Applications

Automotive ADAS ECU Boot MemoryIndustrial PLC Firmware Storage

Use Scenario: Stores boot code and safety-critical firmware for radar processing units requiring fast, deterministic startup and AEC-Q100 compliance.

IC Role / Device Role / Timing Role: Primary XIP-capable boot memory accessed via HYPERBUS™ DDR interface with sub-100 ns random access for instruction fetch.

Use Value: 333 MBps read bandwidth and 256-KB sector granularity enable rapid image loading; ECC ensures functional safety integrity per ISO 26262 ASIL-B.

Use Scenario: Holds field-upgradable firmware and configuration data in programmable logic controllers deployed in factory automation environments.

IC Role / Device Role / Timing Role: Non-volatile storage with hardware write protection and deep power-down for energy-constrained edge nodes.

Use Value: 4 µA deep power-down current extends battery backup life; 100,000 P/E cycles support frequent firmware updates over 10+ years.

5G Baseband Radio UnitMedical Imaging System FPGA Config

Use Scenario: Stores FPGA bitstreams and DSP firmware in remote radio heads where thermal management and signal integrity are critical.

IC Role / Device Role / Timing Role: High-speed configuration memory interfaced directly to FPGA HPS or hard processor system via HYPERBUS™ PHY.

Use Value: Differential CK/CK# and RWDS eliminate timing skew; 166 MHz DDR operation meets tight setup/hold margins for 5G fronthaul timing budgets.

Use Scenario: Provides secure, tamper-resistant configuration storage for FPGA-based image reconstruction engines in MRI and CT scanners.

IC Role / Device Role / Timing Role: Trusted boot memory with CRC and ECC, supporting secure boot chain verification prior to FPGA configuration.

Use Value: One-time-programmable (OTP) array stores cryptographic keys; 20-year data retention guarantees long-term regulatory compliance (IEC 62304).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress S26KS256SDABHN020Same die, identical electrical specs and pinout; rebranded by Infineon post-acquisitionNo functional difference; legacy part number used in older designsSelect when maintaining backward compatibility with Cypress-designated BOMs
Macronix MX25L25645GQuad SPI interface (not DDR), max 133 MHz, 80 MBps read, no RWDS or differential clockLimited to lower-bandwidth applications; lacks HYPERBUS™ timing determinism and ECC engineChoose only if host MCU lacks HYPERBUS™ PHY and design tolerates 2.5× lower read throughput

Compared with S26KL256SDABHN020, the Cypress variant offers identical performance and drop-in compatibility, while the Macronix part trades speed and advanced features for broader SPI ecosystem support and lower cost in non-timing-critical systems.

Availability

S26KL256SDABHN020 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, and 5G radio units requiring stable component supply, AEC-Q100 qualification, and guaranteed 20-year data retention.

Supply support for S26KL256SDABHN020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to Infineon's HYPERFLASH™ product line, engineered specifically for high-bandwidth, low-latency boot and code execution in automotive, industrial, and communications systems demanding deterministic DDR flash access.

FAQ

Is S26KL256SDABHN020 pin-compatible with earlier S26KL256S variants?

Yes - it uses the identical 24-ball FBGA (VAA024) footprint and pin assignment as all S26KL256S-series devices. The "HN020" suffix denotes Industrial Plus temperature grade (–40°C to +105°C) and specific tape-and-reel packaging, with no electrical or mechanical changes to the silicon or package outline.

Does this device support execute-in-place (XIP) operation?

Yes - the HYPERBUS™ DDR interface enables true XIP capability: the host processor can fetch instructions directly from flash without copying to RAM, supported by deterministic 96 ns random access time and continuous linear burst streaming at 333 MBps.

What is the function of the RSTO# pin, and how is its pulse width configured?

RSTO# is an open-drain output that asserts a system-level power-on reset pulse. Its LOW duration is user-configurable via internal OTP register settings, allowing adjustment from 1 ms to 100 ms to match downstream power sequencing requirements of SoCs or FPGAs.

Can RWDS be disabled or repurposed for general I/O?

No - RWDS is a dedicated, unidirectional output strictly tied to read-data validity timing. It cannot be disabled, tri-stated, or reassigned. During write operations or idle states, RWDS remains inactive (HIGH); its behavior is fixed per HYPERBUS™ specification and not software-controllable.

S26KL256SDABHN020 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Programmable:
-
Memory Type:
-
Memory Format:
-
Technology:
-
Memory Size:
-
Memory Organization:
-
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

S26KL256SDABHN020 FAQ

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Please submit a Request for Quotation (RFQ) for S26KL256SDABHN020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S26KL256SDABHN020 reliable?

The price and inventory of S26KL256SDABHN020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KL256SDABHN020 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KL256SDABHN020 transactions.

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S26KL256SDABHN020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S26KL256SDABHN020 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S26KL256SDABHN020?

For technical support, including S26KL256SDABHN020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KL256SDABHN020 requirements.

6.How does Aetrix verify that S26KL256SDABHN020 is sourced from the original manufacturer or authorized distributors?

All S26KL256SDABHN020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KL256SDABHN020 meets industry standards.

7.What is the process for return or replacement of S26KL256SDABHN020?

All S26KL256SDABHN020 units undergo pre-shipment inspection (PSI). If there is an issue with S26KL256SDABHN020, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S26KL256SDABHN020 part is unused and in its original packaging.

Return procedure for S26KL256SDABHN020:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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