Spansion S26KL256SDABHV020

Overview

S26KL256SDABHV020 from Infineon Technologies is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, supporting 1.8 V I/O and differential clock (CK/CK#), delivering 333 MBps sustained read throughput at 166 MHz, 96 ns initial random access time, and ECC 1-bit correction/2-bit detection - deployed in automotive ADAS domain controllers for fast boot code execution.

For engineers reviewing the S26KL256SDABHV020 datasheet, S26KL256SDABHV020 pinout, S26KL256SDABHV020 application, or S26KL256SDABHV020 equivalent, key selection considerations include HYPERBUS™ timing compliance, RWDS-synchronized DDR read strobe behavior, sector protection granularity (256 KB uniform + optional 4 KB parameter sectors), and AEC-Q100 Grade 2 qualification (–40°C to +105°C).

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfer, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ technology for high-density NOR storage with word-wide (16-bit) addressing and 8-bit DDR data bus (DQ[7:0]).

HYPERBUS™ protocol enables burst-oriented operations with configurable wrapped (16/32/64-byte) or linear bursts, center-aligned command/address transfers, and edge-aligned read data referenced to RWDS transitions. Initial latency ranges from 5–16 clock cycles depending on configuration, and DCARS (DDR Center-Aligned Read Strobe) ensures precise timing alignment during high-speed reads.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with S26KL256SDABHV020, the Cypress variant offers identical performance and compatibility, whereas Winbond's QSPI alternative demands hardware and firmware rework due to fundamental interface divergence and absence of HYPERBUS™-specific features like RWDS synchronization and DCARS.

Availability

S26KL256SDABHV020 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLCs, medical imaging boot systems, and avionics display systems requiring stable component supply across extended temperature grades and long lifecycle support.

Supply support for S26KL256SDABHV020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS16949.

This device belongs to Infineon's HYPERFLASH™ family - designed specifically for high-speed, low-pin-count code storage in safety-critical automotive and industrial systems requiring deterministic timing and AEC-Q100 compliance.

FAQ

What is the function of the RWDS signal in S26KL256SDABHV020?

RWDS (Read Data Strobe) is a source-synchronous output signal generated by the device during read operations only. It aligns with the edges of valid read data on DQ[7:0], allowing the host to accurately latch DDR data without relying on clock skew margins. RWDS transitions occur on both rising and falling edges of CK during the data transfer portion, and its timing is defined by DCARS (DDR Center-Aligned Read Strobe) specification in the datasheet.

Does S26KL256SDABHV020 support execute-in-place (XIP) operation?

Yes, S26KL256SDABHV020 supports true XIP operation via its HYPERBUS™ interface. The device delivers deterministic 96 ns initial access time and sustained 333 MBps read throughput, enabling ARM Cortex-R or RH850 processors to fetch instructions directly from flash without intermediate buffering. XIP requires host controller support for HYPERBUS™ command protocol and RWDS-synchronized latching.

How does the 512-byte program buffer improve write performance?

The 512-byte buffer allows the device to accept a full buffer load in one burst and internally program all 512 bytes in ~475 µs - achieving ~1 MBps effective write speed. This is 95% faster than single-word programming (500 µs per 2-byte word), significantly reducing OTA update time and minimizing host CPU wait states during firmware patching or calibration data writes.

What temperature grades are available for S26KL256SDABHV020?

S26KL256SDABHV020 is qualified for Industrial Plus (–40°C to +105°C) and Automotive Grade 2 (–40°C to +105°C) per AEC-Q100. The "HV" suffix in the part number explicitly denotes the +105°C maximum operating temperature. It is not rated for the +125°C Extended or Grade 1 automotive range - those require the "HX" suffix variant.