Spansion S26KL256SDABHV030

Overview

S26KL256SDABHV030 from Infineon is a 256 Mb (32 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, and operates across –40°C to +105°C (Industrial Plus grade) in automotive and industrial embedded boot memory applications.

For engineers reviewing the S26KL256SDABHV030 datasheet, S26KL256SDABHV030 pinout, S26KL256SDABHV030 application, or S26KL256SDABHV030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), ECC 1-bit correction / 2-bit detection, configurable burst length (16/32/64 bytes), deep power-down current (4 µA), and AEC-Q100 Grade 2 qualification.

Technical Context

The device implements a DDR center-aligned read strobe (DCARS) architecture where command/address and data are transferred over the same 8-bit DQ bus using double-data-rate signaling synchronized to CK/CK#. Read operations require initial latency of 5–16 clock cycles and support wrapped or linear burst modes with automatic page prefetch during linear bursts.

Its dual-controller architecture separates host interface control (HIC) for signal timing and data transfer from the embedded algorithm controller (EAC), which autonomously executes program/erase sequences-including 512-byte buffer programming and sector erase-without host intervention. ECC and CRC are hardware-accelerated and applied per read transaction.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with CY15B104QN-PSOC, S26KL256SDABHV030 provides 8× higher density and 8× faster read throughput but requires erase-before-write; versus S26KL512SDABHV030, it offers identical interface and reliability at lower cost and power for ≤32 MB firmware footprints.

Availability

S26KL256SDABHV030 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, 5G radio units, and medical imaging controllers requiring stable component supply with full AEC-Q100 and ISO/TS16949 traceability.

Supply support for S26KL256SDABHV030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and high-reliability memory solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to Infineon's HYPERFLASH™ family-designed specifically for replacing parallel NOR flash in bandwidth-constrained, high-temperature embedded systems where pin count, power, and boot speed are critical.

FAQ

What voltage levels does S26KL256SDABHV030 support for VCC and VCCQ?

The device supports 1.8 V for both core (VCC) and I/O (VCCQ) supply rails. It is not rated for 3.0 V operation-this variant (SABHV030 suffix) is exclusively 1.8 V I/O. The 3.0 V version uses different ordering suffixes (e.g., SABHV020). Mixing voltages risks latch-up or timing violation per Section 11.4 of the datasheet.

Does S26KL256SDABHV030 require external termination resistors for CK/CK# or DQ signals?

Yes-per Section 10.2 of the datasheet, 49.9 Ω series resistors are required on CK/CK# near the source, and 33 Ω series resistors on each DQ line near the memory device. RWDS also requires a 33 Ω series resistor. These values ensure signal integrity at 166 MHz DDR and meet HYPERBUS™ specification impedance targets.

How is the 512-byte program buffer utilized during firmware updates?

The buffer accepts up to 512 bytes in a single write transaction, then internally programs them in ~475 µs-achieving ~1 MBps effective write speed. Host must issue a "buffer write" command followed by address and data; the EAC handles internal verify and retry. No host polling is needed beyond checking INT# or status register after completion.

Can S26KL256SDABHV030 operate in linear burst mode without external prefetch logic?

Yes-the embedded algorithm controller (EAC) automatically initiates prefetch of the next sequential page during linear burst reads, enabling continuous 333 MBps output without host-side prefetch instructions. This is hardware-managed and transparent to the HYPERBUS™ master, as confirmed in Section 1.2 and Figure 1 of the datasheet.