Nexperia USA Inc. S26KL512SDABHA030

Overview

S26KL512SDABHA030 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DDR data bus (DQ[7:0]), and read-data strobe (RWDS). It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S26KL512SDABHA030 datasheet, S26KL512SDABHA030 pinout, S26KL512SDABHA030 application, or S26KL512SDABHA030 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-synchronized DDR read latency (96 ns initial access), ECC 1-bit correction/2-bit detection capability, and support for wrapped/linear burst configurations in embedded boot and code-execution systems.

Technical Context

The device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with dual-edge sampling referenced to CK/CK#. Its internal MIRRORBIT™ architecture enables page-aligned 32-byte random reads with configurable 5–16 clock-cycle initial latency and automatic next-page prefetch during linear bursts.

Control logic is split between Host Interface Controller (HIC) handling real-time signal capture and RWDS generation, and Embedded Algorithm Controller (EAC) executing non-volatile program/erase sequences-including sector erase, buffer programming, and volatile/non-volatile sector protection-without host intervention.

Key Specifications

Pinout & Package

Package: 24-ball Fortified Ball Grid Array (FBGA), VAA024 footprint (6 mm × 8 mm × 1.0 mm height), RoHS-compliant, lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL512SDABHA030, the S26KS512SDABHA020 trades bandwidth and timing flexibility for 3.0 V compatibility, while the S26KL256SDABHA030 offers identical interface behavior at half the density-making it suitable for cost-sensitive or space-constrained implementations where 256 MB suffices.

Availability

S26KL512SDABHA030 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, and medical imaging systems requiring stable component supply, AEC-Q100 qualification, and long-term firmware storage reliability.

Supply support for S26KL512SDABHA030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and communications markets.

The HYPERFLASH™ product line targets high-performance embedded systems needing fast, reliable, pin-efficient non-volatile memory for code execution and firmware storage-especially where DDR interface bandwidth and ECC integrity are critical.

FAQ

What is the purpose of the RWDS signal in S26KL512SDABHA030?

RWDS (Read Data Strobe) is an output signal synchronized to read data transitions on DQ[7:0]. It provides edge-aligned timing reference for the host to correctly sample valid data during DDR read operations. Unlike clock signals, RWDS is only active during read bursts and is essential for meeting setup/hold timing margins in high-speed interfaces.

Does S26KL512SDABHA030 support true random access or only burst reads?

S26KL512SDABHA030 supports true random access at 32-byte page granularity, with 96 ns initial access time and configurable 5–16 clock-cycle latency. While all reads are burst-oriented, the device allows arbitrary starting addresses within a page and supports single-word reads via short bursts, enabling direct code execution and pointer-based data access.

How does the 512-byte program buffer improve write performance?

The 512-byte buffer allows the host to issue one command and stream up to 512 bytes of data before triggering internal programming. This reduces command overhead and enables sustained write speeds of ~1 MBps-over 2000× faster than single-word programming (4 KBps)-making firmware updates significantly more efficient in production and field deployment.

Can S26KL512SDABHA030 operate in deep power-down mode while retaining data integrity?

Yes-deep power-down draws only 4 µA (typical) at 85°C and preserves all stored data. The device requires a 300 µs wake-up period before accepting commands, but no data loss occurs. This mode is ideal for battery-powered systems requiring ultra-low standby current without compromising non-volatility or ECC protection.