Infineon Technologies S26KL512SDABHB020

Overview

S26KL512SDABHB020 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S26KL512SDABHB020 datasheet, S26KL512SDABHB020 pinout, S26KL512SDABHB020 application, or S26KL512SDABHB020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access, 118 ns CS# to first word), RWDS-synchronized DDR read alignment, sector protection granularity, deep power-down current (8 µA), and AEC-Q100 grade 3 qualification for automotive control modules.

Technical Context

This device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with RWDS edge-aligned to data transitions during reads and CK/CK# differential clocking enabling precise timing capture. The embedded algorithm controller (EAC) autonomously executes program/erase sequences without host intervention, using internal command memory and MIRRORBIT™ architecture for high endurance.

It supports configurable burst modes - wrapped (16/32/64-byte) or linear - with hybrid option, and uses DCARS (DDR Center-Aligned Read Strobe) to align read data to RWDS edges. Initial latency ranges from 5 to 16 clock cycles, and the 512-byte write buffer enables ~1 MBps buffered programming performance.

Key Specifications

Pinout & Package

Package: 24-ball Fortified Ball Grid Array (FBGA), VAA024 footprint (5 mm × 5 mm, 0.8 mm ball pitch), RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL512SDABHB020, the S26KS512SDABHI020 offers extended temperature support and stronger ECC at no interface or timing penalty, while the S26KL256SDABHB020 provides identical performance in half the density - enabling direct drop-in replacement where firmware size permits.

Availability

S26KL512SDABHB020 is available at Aetrix Electronics and suitable for automotive ADAS controllers, industrial PLCs, 5G radio units, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and AEC-Q100-compliant flash memory.

Supply support for S26KL512SDABHB020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D facilities.

This part belongs to the HYPERFLASH™ product line, designed specifically for high-bandwidth, low-pin-count non-volatile memory applications in automotive, industrial, and communications systems requiring fast boot and reliable firmware storage.

FAQ

What is the minimum initial latency for random read access?

The initial random read access latency is configurable from 5 to 16 clock cycles, depending on system timing margin and HYPERBUS™ master setup. This latency occurs after CS# assertion and clock stabilization, before the first data word appears on DQ. It is independent of burst length and applies to all read operations initiated from idle state.

Does S26KL512SDABHB020 support 3.0 V I/O operation?

No - S26KL512SDABHB020 is specified for 1.8 V I/O operation only, with differential CK/CK# clocking. While the broader HYPERFLASH™ family includes 3.0 V I/O variants (e.g., S26KL512Sxxx000), this specific part number (ending in "BHB020") is exclusively 1.8 V I/O compliant per Infineon's ordering matrix and datasheet Rev. *Q section 14.1.

How does the RSTO# output function during power-up?

RSTO# asserts a LOW pulse during power-on reset, with duration configurable via internal register (default 100 ms). It remains LOW until VCC reaches stable operating voltage and internal logic completes initialization, then transitions HIGH to release downstream logic. This eliminates need for discrete reset supervisors in tightly integrated systems.

Can RWDS be used for write-data capture?

No - RWDS is read-only and functions solely as a read data strobe. During write operations, the host must rely on CK/CK# edges and timing parameters (tDS/tDH) to sample DQ signals. RWDS remains inactive (HIGH) during writes and is not driven by the device in that phase, per HYPERBUS™ protocol specification.