Infineon Technologies S26KL512SDABHB023

Overview

S26KL512SDABHB023 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DDR data bus (DQ[7:0]), and read-data strobe (RWDS). It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. It is used in automotive ADAS domain controllers for fast boot code execution.

For engineers reviewing the S26KL512SDABHB023 datasheet, S26KL512SDABHB023 pinout, S26KL512SDABHB023 application, or S26KL512SDABHB023 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), RWDS-synchronized DDR read alignment, ECC 1-bit correction/2-bit detection capability, and deep power-down current (8 µA typical) for low-power firmware storage.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time signal capture and DDR data transfer timing, while Embedded Algorithm Controller (EAC) executes internal program/erase algorithms without host intervention. It uses MIRRORBIT™ technology for high-density NOR array organization and supports both wrapped (16/32/64-byte) and linear burst modes.

HYPERBUS™ protocol enables command/address/data multiplexing over the same 8-bit DQ bus using DDR edge-aligned transfers; RWDS output is edge-aligned to CK/CK# transitions during reads, enabling precise data capture. Initial latency is configurable from 5 to 16 clock cycles, and DCARS (DDR Center-Aligned Read Strobe) ensures deterministic timing for high-speed boot loaders.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL512SDABHB023, the S26KS512SDABHB020 extends temperature range without trade-offs in speed or pinout, while the S26KL256SDABHB020 halves density and active current-enabling smaller firmware storage with lower power draw in space-constrained modules.

Availability

S26KL512SDABHB023 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, and medical imaging system boot memory requiring stable component supply across extended product lifecycles.

Supply support for S26KL512SDABHB023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

The HYPERFLASH™ product line targets high-speed, low-pin-count firmware storage for automotive, industrial, and medical systems requiring deterministic boot performance and long-term data integrity.

FAQ

What is the purpose of the RWDS signal in S26KL512SDABHB023?

RWDS (Read Data Strobe) is an output signal synchronized to CK/CK# edges during read operations, indicating valid data windows on the DQ[7:0] bus. It enables precise edge-aligned sampling by the host controller and is not used during write operations. Its timing is defined in HYPERBUS™ specification section 4.3 and supports DCARS functionality for jitter-tolerant data capture.

Does S26KL512SDABHB023 support both 1.8 V and 3.0 V I/O operation?

No - S26KL512SDABHB023 is a 1.8 V I/O variant only, with differential clock (CK/CK#) and 12-signal HYPERBUS™ interface. The 3.0 V I/O variants (e.g., S26KL512SDABHA023) use single-ended clock and 11-signal interface. Mixing voltage domains violates absolute maximum ratings and risks permanent damage.

How does the 512-byte program buffer improve write performance?

The 512-byte buffer allows burst programming of up to 512 bytes per command, achieving ~1 MBps effective write speed versus 4 KBps for single-word writes. This reduces total firmware update time by >95% in typical OTA scenarios and minimizes host CPU occupancy during flash programming sequences.

Is RSTO# output configurable for different reset pulse durations?

Yes - RSTO# duration is programmable via internal configuration register (CR2[7:4]). Valid settings range from 16 to 256 clock cycles of CK, enabling system-level reset pulses tailored to downstream power rail stabilization times. Default value is 64 cycles, yielding ~384 ns at 166 MHz.