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Spansion S26KL512SDABHB030

Part No.:
S26KL512SDABHB030
Manufacturer:
Spansion
Category:
Memory
Package:
24-VBGA
Datasheet:
AetrixS26KL512SDABHB030.pdf
Description:
IC FLASH 512MBIT PAR 24FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:234

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Product details

Overview

S26KL512SDABHB030 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sectors and optional 4-KB parameter sectors, and operates across –40°C to +105°C (Industrial Plus grade) in automotive-grade AEC-Q100 Grade 2 applications.

For engineers reviewing the S26KL512SDABHB030 datasheet, S26KL512SDABHB030 pinout, S26KL512SDABHB030 application, or S26KL512SDABHB030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns tACC, 118 ns CS# access @ 166 MHz), ECC 1-bit correction/2-bit detection, configurable burst modes (16/32/64-byte wrapped or linear), and deep power-down current (8 µA typical).

Technical Context

This device implements a synchronous DDR interface using differential clock inputs (CK/CK#) and a center-aligned read strobe (DCARS) protocol, enabling two 8-bit transfers per clock cycle on the 8-bit DQ bus. Its embedded algorithm controller (EAC) autonomously executes program/erase sequences without host intervention, while the host interface controller (HIC) handles real-time signal capture and command forwarding.

It uses MIRRORBIT™ NOR architecture with page-aligned 32-byte random reads (two 16-byte half-pages), supports both wrapped and linear burst transactions, and integrates RSTO# for system-level power-on reset with user-configurable LOW period and INT# for ECC error or busy-to-ready interrupt signaling.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density512 Mb (64 MB) - provides sufficient code storage for complex boot firmware and real-time OS in automotive ECUs.
Interface StandardHYPERTBUS™ DDR - reduces pin count vs parallel NOR while sustaining 333 MBps read throughput via dual-edge DQ sampling.
Max Clock Rate166 MHz at 1.8 V - enables high-speed sequential execution from flash without external cache or RAM shadowing.
Random Read Access96 ns tACC - ensures deterministic latency for critical boot code fetches in safety-critical systems.
ECC Support1-bit correction / 2-bit detection - maintains data integrity during long-term operation in extended temperature environments.
Power ModesDeep Power-Down: 8 µA typical - extends battery life in always-on vehicle modules during sleep states.
Endurance & Retention100,000 program/erase cycles; 20-year data retention - meets automotive lifecycle requirements for infotainment and ADAS firmware storage.

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
CK / CK#Differential clock inputProvides precise edge-aligned timing reference for DDR data capture; required for 166 MHz operation.
CS#Chip select (active-low)Enables device communication; must be asserted before command/address transfer and held active during burst.
RWDSRead data strobe outputIndicates valid read data windows; synchronized to CK edges during read; not used for write operations.
DQ[7:0]Bi-directional data busTransfers command, address, and 16-bit data (8 bits per clock edge) in DDR mode; no separate address bus.
INT#Interrupt outputAsserts on ECC error detection or busy-to-ready transition; supports asynchronous host event handling.
RSTO#Reset outputGenerates system-level power-on reset pulse; LOW duration programmable via configuration register.

Key Features

FeatureDesign Value
HYPERBUS™ DDR InterfaceReduces signal count to 12 pins (vs ≥40 for legacy parallel NOR), simplifying PCB routing and EMI control in dense automotive layouts.
Configurable Burst ModeSupports 16/32/64-byte wrapped bursts or linear bursts - optimizes bandwidth utilization for both small instruction fetches and large firmware updates.
Embedded Algorithm Controller (EAC)Executes autonomous sector erase and buffer programming - eliminates host CPU overhead and guarantees timing-critical internal sequencing.
Advanced Sector ProtectionVolatile and non-volatile lock bits per 256-KB sector - enables secure firmware partitioning with independent protection of boot code and application regions.
Automotive QualificationAEC-Q100 Grade 2 (–40°C to +105°C) and ISO/TS16949 certified - validated for under-hood and cockpit ECU deployment without derating.

Applications

Automotive ADAS Camera ModuleInfotainment Head Unit

Use Scenario: Stores and executes real-time image processing firmware for surround-view camera fusion.

IC Role / Device Role / Timing Role: High-speed code-execution memory with deterministic 96 ns random access and ECC-protected boot vector fetch.

Use Value: Enables zero-latency startup and continuous firmware integrity monitoring during vehicle power cycling.

Use Scenario: Hosts Linux kernel, GUI assets, and OTA update packages in centralized head unit platforms.

IC Role / Device Role / Timing Role: Primary non-volatile storage with 333 MBps linear burst read for fast UI rendering and media loading.

Use Value: Reduces boot time by >40% vs QSPI NOR and eliminates need for external SRAM caching.

Electric Vehicle Battery Management System (BMS)Commercial Telematics Control Unit

Use Scenario: Stores calibrated cell-balancing algorithms and safety-critical fault logs with 20-year retention.

IC Role / Device Role / Timing Role: Secure, endurance-rated firmware repository with 100,000-cycle erase capability and deep power-down support.

Use Value: Ensures regulatory compliance for ASIL-B software storage and enables over-the-air calibration updates.

Use Scenario: Holds GNSS firmware, cellular modem stack, and fleet management application binaries.

IC Role / Device Role / Timing Role: Dual-voltage (1.8 V/3.0 V) compatible flash supporting hybrid power domains in telematics gateways.

Use Value: Simplifies power architecture by eliminating level shifters between MCU and memory subsystems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress S26KS512SDABHB020Same HYPERBUS™ interface, identical 512 Mb density and FBGA24 package, but rated for Industrial (–40°C to +85°C) only.Lacks AEC-Q100 Grade 2 qualification and Extended temperature support; not approved for under-hood use.Select when cost sensitivity outweighs automotive qualification requirements and ambient temperature stays ≤85°C.
Winbond W25Q512JWQuad SPI interface (not HYPERBUS™), 512 Mb density, 1.8 V operation, but max read speed 133 MBps (vs 333 MBps) and no built-in ECC.No differential clock or RWDS; requires host-side ECC implementation and lacks deterministic low-latency access.Choose only for non-safety-critical consumer devices where pin count and cost are primary constraints.

Compared with S26KL512SDABHB030, the Cypress alternative trades automotive qualification for lower cost in industrial settings, while the Winbond part sacrifices speed, ECC integration, and timing determinism for SPI compatibility and broader vendor availability.

Availability

S26KL512SDABHB030 is available at Aetrix Electronics and suitable for automotive ADAS systems, infotainment head units, electric vehicle BMS, and commercial telematics control units requiring stable component supply, AEC-Q100 compliance, and high-speed code execution.

Supply support for S26KL512SDABHB030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and quality certification aligned to ISO/TS16949.

This device belongs to Infineon's HYPERFLASH™ product line, engineered specifically for automotive and industrial applications demanding high-speed, reliable, and qualified NOR flash memory with minimal interface complexity.

FAQ

What voltage levels does S26KL512SDABHB030 support for core and I/O operation?

The device supports dual-voltage operation: VCC/VCCQ = 1.8 V ±0.15 V for high-speed 166 MHz operation with differential clock, and VCC/VCCQ = 3.0 V ±0.3 V for 100 MHz operation with single-ended clock. Both configurations share the same 24-ball FBGA package and command set, enabling flexible system-level voltage scaling.

Does S26KL512SDABHB030 require external pull-up resistors on its control signals?

No external pull-ups are required on CS#, INT#, or RSTO# - all three signals have internal weak pull-up circuitry enabled after power-on reset. RWDS and DQ[7:0] are actively driven outputs/inputs and do not require termination resistors beyond standard DDR impedance matching (typically 40–50 Ω series or parallel).

How is ECC handled during read operations, and what happens on uncorrectable errors?

ECC logic runs transparently during every read access: 1-bit errors are corrected in hardware and data delivered error-free; 2-bit errors trigger the INT# pin assertion and set the corresponding status bit in the device's error flag register. No automatic retry or host intervention is required for correction, but uncorrectable errors must be handled by firmware via INT# polling or interrupt service routine.

Can S26KL512SDABHB030 be used with controllers lacking native HYPERBUS™ support?

Yes - it can interface with standard microcontrollers via GPIO-banged HYPERBUS™ protocol, though performance will be limited to ~10–20 MBps due to software timing constraints. Full 333 MBps throughput requires a dedicated HYPERBUS™ master IP block (e.g., in NXP S32G or Renesas RH850/U2A), which provides hardware-level DDR clock alignment and RWDS synchronization.

S26KL512SDABHB030 Specifications

Product attributes
Attribute value
Manufacturer:
Spansion
Series:
HYPERFLASH™ KL
Package/Case:
24-VBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NOR
Memory Size:
512Mbit
Memory Organization:
64M x 8
Memory Interface:
Parallel
Clock Frequency:
100 MHz
Write Cycle Time - Word, Page:
-
Access Time:
96 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 105°C (TA)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
24-FBGA (6x8)

S26KL512SDABHB030 FAQ

1.How can I place an order for S26KL512SDABHB030 through Aetrix?

Please submit a Request for Quotation (RFQ) for S26KL512SDABHB030 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S26KL512SDABHB030 reliable?

The price and inventory of S26KL512SDABHB030 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KL512SDABHB030 is usually 5 days.

3.What payment methods are accepted for S26KL512SDABHB030?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KL512SDABHB030 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S26KL512SDABHB030?

S26KL512SDABHB030 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S26KL512SDABHB030 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S26KL512SDABHB030?

For technical support, including S26KL512SDABHB030 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KL512SDABHB030 requirements.

6.How does Aetrix verify that S26KL512SDABHB030 is sourced from the original manufacturer or authorized distributors?

All S26KL512SDABHB030 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KL512SDABHB030 meets industry standards.

7.What is the process for return or replacement of S26KL512SDABHB030?

All S26KL512SDABHB030 units undergo pre-shipment inspection (PSI). If there is an issue with S26KL512SDABHB030, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S26KL512SDABHB030 part is unused and in its original packaging.

Return procedure for S26KL512SDABHB030:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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