Infineon Technologies S26KL512SDABHI020

Overview

S26KL512SDABHI020 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and 3.0 V core, delivering 333 MBps sustained read throughput via 8-bit DDR data bus (DQ[7:0]), differential clock (CK/CK#), and RWDS strobe. It supports uniform 256-KB sector erase, 100,000 program/erase cycles, and AEC-Q100 Grade 2 automotive qualification (–40°C to +105°C), deployed in ADAS domain controllers for fast boot code execution.

For engineers reviewing the S26KL512SDABHI020 datasheet, S26KL512SDABHI020 pinout, S26KL512SDABHI020 application, or S26KL512SDABHI020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access, 166 MHz DDR clock), ECC 1-bit correction/2-bit detection, RSTO#/INT# interrupt signaling, and FBGA-24 package compatibility with high-density PCB layouts.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and burst data transfer using center-aligned command/address and edge-aligned read data referenced to RWDS transitions; Embedded Algorithm Controller (EAC) autonomously executes program/erase sequences without host intervention. It uses MIRRORBIT™ floating-gate technology for non-volatile storage and supports both wrapped (16/32/64-byte) and linear burst modes.

HYPERBUS™ protocol enables single-ended or differential clock operation, with RWDS acting solely as read-data strobe synchronized to CK/CK# edges. The 512-byte write buffer reduces effective programming time to 475 µs per 512-byte block (~1 MBps), while DCARS (DDR Center-Aligned Read Strobe) ensures precise timing alignment between host and memory during high-speed reads.

Key Specifications

Pinout & Package

Package: 24-ball Fortified Ball Grid Array (FBGA), 5 × 5 mm, 1.0 mm height (VAA024 footprint), RoHS-compliant, suitable for automated SMT assembly and thermal management in compact automotive modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL512SDABHI020, the Cypress alternative matches electrical and functional behavior but omits automotive validation, while Winbond's QSPI part trades bandwidth and integration for broader host compatibility - neither supports the same level of deterministic timing or safety-critical error resilience.

Availability

S26KL512SDABHI020 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, EV battery management systems, and infotainment head units requiring stable component supply, long-term lifecycle support, and AEC-Q100-compliant sourcing.

Supply support for S26KL512SDABHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to Infineon's HYPERFLASH™ family, designed specifically for high-bandwidth, low-latency code storage in automotive and industrial real-time systems where DDR interface efficiency and functional safety are mandatory.

FAQ

What is the minimum supported VCCQ voltage for S26KL512SDABHI020?

The device supports 1.8 V ±0.15 V for I/O (VCCQ) and 3.0 V ±0.3 V for core (VCC). Operation below 1.65 V VCCQ violates absolute maximum ratings and disables DDR functionality - no 1.2 V or 2.5 V modes are supported per datasheet Rev. *Q Section 11.4.

Does S26KL512SDABHI020 require external pull-up resistors on INT# and RSTO#?

Yes - INT# and RSTO# are open-drain outputs requiring external 4.7 kΩ pull-up resistors to VCCQ. This is specified in Section 11.5 (DC characteristics) and confirmed in the connection diagram (Figure 2, page 10), ensuring proper logic-high assertion during idle states.

Can S26KL512SDABHI020 operate in single-ended clock mode?

No - this variant (S26KL512SDABHI020) is configured for differential clock (CK/CK#) only, as indicated by the 'D' in the part number suffix and Table 14.3 (Valid combinations - automotive grade). Single-ended operation is supported only in 3.0 V I/O variants (e.g., S26KL512SAxx).

How is the 512-byte write buffer utilized during programming?

The buffer accepts up to 512 bytes in a single burst write; internal EAC then programs all data in one atomic operation taking 475 µs (typical). This avoids per-word programming overhead (500 µs/word), improving effective throughput to ~1 MBps and reducing host CPU intervention.