Infineon Technologies S26KL512SDABHM020

Overview

S26KL512SDABHM020 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and read data strobe (RWDS). It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S26KL512SDABHM020 datasheet, S26KL512SDABHM020 pinout, S26KL512SDABHM020 application, or S26KL512SDABHM020 equivalent, key selection criteria include HYPERBUS™ DDR timing compliance, RWDS-synchronized read latency (96 ns tACC), sector protection configuration, deep power-down current (8 µA), and AEC-Q100 grade compatibility for automotive control modules.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfers, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses center-aligned command/address and edge-aligned read data relative to RWDS transitions.

HYPERBUS™ protocol enables burst-oriented operations with configurable wrapped (16/32/64-byte) or linear bursts, and supports both initial random access (5–16 clock cycles latency) and continuous sequential reads. The MIRRORBIT™ core enables 16-bit word-wide addressing and page-based 32-byte random access aligned to half-page boundaries.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with CY15B104QN-PSOC and S26KS512SDABHM020, S26KL512SDABHM020 uniquely balances 333 MBps bandwidth, automotive qualification, and 1.8 V low-power operation - making it optimal for next-gen ADAS and edge AI boot memory where speed, density, and reliability converge.

Availability

S26KL512SDABHM020 is available at Aetrix Electronics and suitable for automotive ECU design, industrial PLC firmware storage, medical imaging boot systems, and 5G baseband processor code storage requiring stable component supply across extended lifecycle programs.

Supply support for S26KL512SDABHM020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS16949.

The HYPERFLASH™ product line targets high-performance embedded systems requiring fast, reliable, and automotive-qualified non-volatile memory - specifically optimized for boot code execution and firmware updates in resource-constrained, safety-critical platforms.

FAQ

What is the function of the RWDS signal in S26KL512SDABHM020?

RWDS (Read Data Strobe) is a source-synchronous output that indicates valid data edges on DQ[7:0] during read operations. It is referenced to CK/CK# transitions and used exclusively for reads-not writes-to enable precise timing capture by the host controller. RWDS does not drive during write or command phases, and its duty cycle matches the data valid window.

Does S26KL512SDABHM020 support both linear and wrapped burst modes?

Yes, S26KL512SDABHM020 supports both linear and wrapped burst modes per transaction. Wrapped bursts are configurable for 16, 32, or 64 bytes; linear bursts continue sequentially until CS# deassertion. The mode is selected dynamically via command, allowing mixed-mode operation across different memory regions for optimal cache-line or DMA alignment.

How does the embedded algorithm controller (EAC) affect host software design?

Host software interacts only with command registers and status bits-the EAC handles all low-level program/erase sequencing internally. This eliminates need for host-side timing loops or voltage ramping logic. Software initiates operations with standard commands (e.g., 0x10 for program, 0x20 for sector erase) and polls status register bit 7 (READY/BUSY) for completion, simplifying driver development.

Is RSTO# output configurable for duration and polarity?

Yes, RSTO# pulse width is user-configurable via non-volatile configuration register bits (CR[15:12]). Valid durations range from 1 ms to 128 ms in powers of two. Polarity is fixed active-low, and RSTO# asserts after VCC/VCCQ stabilize and internal power-on reset completes-providing a clean, synchronized system reset independent of external RC networks.