Infineon Technologies S26KL512SDABHM023

Overview

S26KL512SDABHM023 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package for embedded boot code storage.

For engineers reviewing the S26KL512SDABHM023 datasheet, S26KL512SDABHM023 pinout, S26KL512SDABHM023 application, or S26KL512SDABHM023 equivalent, key selection criteria include DDR read latency (96 ns initial random access), configurable burst lengths (16/32/64 bytes), low-power modes (25 µA standby), RSTO#/INT# signaling, and AEC-Q100 grade 3 compliance for automotive control units.

Technical Context

The device implements a synchronous DDR interface using differential clock (CK/CK#) and RWDS as read-data strobe referenced to CK edges; command/address and data are transferred center-aligned on DQ[7:0] with edge-aligned read data relative to RWDS transitions. Its dual-controller architecture separates host interface (HIC) for signal timing and data transfer from embedded algorithm controller (EAC) managing program/erase sequences.

It uses MIRRORBIT™ NOR core with page-based access (32-byte pages, 16-byte half-pages), supports wrapped or linear burst reads, and enables simultaneous burst output while prefetching next page - enabling sustained 333 MBps throughput. Sector erase and write buffer programming (512-byte buffer) are executed autonomously by EAC without host intervention beyond command issuance.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL512SDABHM023, the Cypress alternative offers wider temperature range but no automotive qualification, while the Winbond part trades pin count and integrated safety signaling for simpler interface and lower BOM cost - making S26KL512SDABHM023 optimal for AEC-Q100-compliant ADAS and industrial control where deterministic timing and hardware ECC are mandatory.

Availability

S26KL512SDABHM023 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, and medical imaging system boot memory requiring stable component supply, long-term lifecycle support, and AEC-Q100 grade 3 compliance.

Supply support for S26KL512SDABHM023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to Infineon's HYPERFLASH™ family - designed specifically for high-speed, low-pin-count boot memory in automotive and industrial systems requiring deterministic DDR read performance, hardware ECC, and robust data retention.

FAQ

What is the purpose of the RWDS signal in S26KL512SDABHM023?

RWDS (Read Data Strobe) is an output signal synchronized to CK/CK# edges that indicates when valid read data is present on DQ[7:0]. It enables precise capture timing for DDR read operations, especially critical in high-speed interfaces where setup/hold margins are tight. Unlike clock signals, RWDS is driven only during read bursts and reflects actual data validity rather than fixed periodic timing.

Does S26KL512SDABHM023 support both 1.8 V and 3.0 V I/O operation?

No - S26KL512SDABHM023 is configured for 1.8 V I/O operation with differential clock (CK/CK#) and supports only 1.8 V VCCQ. The 3.0 V I/O variant is a different part number (e.g., S26KL512SDABHM020). This version's 1.8 V interface reduces power consumption and EMI, aligning with modern SoC I/O voltage standards.

How does the 512-byte program buffer improve write performance?

The 512-byte buffer allows the host to issue a full buffer write in one transaction, reducing command overhead and enabling internal background programming. Measured performance shows ~475 µs buffer programming time (~1 MBps), which is over 200× faster than single-word programming (500 µs per 2-byte word), significantly accelerating firmware updates and field reprogramming.

What is the function of the RSTO# pin, and how is it configured?

RSTO# is an open-drain output that generates a system-level power-on reset signal. Its LOW pulse duration is user-configurable via internal registers, allowing alignment with SoC reset timing requirements (e.g., 1–100 ms). It asserts automatically after power stabilization and can be re-triggered via software command, eliminating need for external reset ICs in compact designs.