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Nexperia USA Inc. S26KL512SDABHM030
- Part No.:
- S26KL512SDABHM030
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Memory
- Package:
- -
- Datasheet:
-
S26KL512SDABHM030.pdf
- Description:
- S26KL512S - 3V 512MBIT, HYPERFLA
- Quantity:
- Payment:
- Shipping:
Inventory:972
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Product details
Overview
S26KL512SDABHM030 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), and 8-bit data bus (DQ[7:0]). It delivers 333 MBps sustained read throughput at 166 MHz, supports ECC 1-bit correction/2-bit detection, and operates across –40°C to +105°C (Industrial Plus grade) in automotive-grade AEC-Q100 Grade 2 compliance. Used in ADAS domain controllers for fast boot code execution.
For engineers reviewing the S26KL512SDABHM030 datasheet, S26KL512SDABHM030 pinout, S26KL512SDABHM030 application, or S26KL512SDABHM030 equivalent, key selection criteria include HYPERBUS™ timing compliance, RWDS-synchronized DDR read strobe behavior, sector protection granularity (256 KB uniform + optional 4 KB parameter sectors), and deep power-down current (8 µA typical) for low-power firmware storage.
Technical Context
This device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with read data edge-aligned to RWDS transitions referenced to CK/CK# edges. Internal MIRRORBIT™ architecture enables parallel half-page access and linear burst prefetching to sustain 333 MBps throughput.
It integrates dual control logic blocks: Host Interface Controller (HIC) handles real-time signal capture and data transfer coordination, while Embedded Algorithm Controller (EAC) executes autonomous program/erase sequences-including 256 KB sector erase (930 ms typical) and 512-byte buffer programming (475 µs)-without host intervention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mb (64 MB) - supports full boot image + firmware partitioning for safety-critical ECUs |
| Interface Protocol | HYPERTBUS™ DDR - reduces pin count vs. parallel NOR while enabling 2× data per clock cycle |
| Max Read Throughput | 333 MBps @ 166 MHz - enables sub-200 ms boot time for 64 MB firmware images |
| Initial Random Access Latency | 96 ns / 5–16 clock cycles - determines minimum instruction fetch delay after address assertion |
| ECC Capability | 1-bit correction, 2-bit detection - mitigates single-event upsets in automotive radiation environments |
| Endurance & Retention | 100,000 program/erase cycles, 20-year data retention - meets ASIL-B firmware update requirements |
| Operating Temperature | –40°C to +105°C (Industrial Plus) - qualified per AEC-Q100 Grade 2 for under-hood ECU deployment |
Pinout & Package
Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, 1.0 mm height - optimized for high-density automotive PCB layouts with thermal reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Provides precise timing reference for DDR data capture; required for 166 MHz operation at 1.8 V |
| CS# | Chip select (active-low) | Enables device communication; must be asserted before command/address setup on DQ bus |
| RWDS | Read data strobe output | Indicates valid read data windows; edge-aligned to data transitions during HYPERBUS™ reads |
| DQ[7:0] | Bi-directional DDR data bus | Carries command, address, and 8-bit-wide data on both clock edges; no separate address bus needed |
| INT# | Interrupt output | Signals Busy→Ready transition or ECC error detection to host processor without polling |
| RSTO# | Reset output | Generates system-level power-on reset pulse; user-configurable LOW duration for sequenced SoC initialization |
Key Features
| Feature | Design Value |
|---|---|
| HYPERBUS™ DDR interface | Reduces signal count to 12 pins (vs. >40 for legacy parallel NOR), easing routing in space-constrained ADAS modules |
| Configurable burst mode | Supports wrapped (16/32/64-byte) or linear bursts per transaction-enabling optimal cache-line alignment for ARM Cortex-R5F fetch patterns |
| Advanced sector protection | Volatile/non-volatile locking per 256 KB sector plus eight 4 KB parameter sectors-secures bootloader and calibration data independently |
| Low-power modes | Deep power-down draws only 8 µA (typical); active clock stop during read consumes 12 mA-critical for always-on ECU sleep states |
| One-time programmable array | 1024-byte OTP region stores immutable keys or hardware IDs for secure boot chain binding |
Applications
| ADAS Domain Controller Boot Memory | Automotive Gateway Firmware Storage |
|---|---|
Use Scenario: Stores boot ROM, safety monitor, and initial firmware for multi-core domain controllers requiring <200 ms cold boot. IC Role / Device Role / Timing Role: Primary non-volatile code storage with HYPERBUS™-timed instruction fetch; RWDS-synchronized DDR reads feed Cortex-R5F L1 I-cache. Use Value: 333 MBps throughput cuts boot latency by 40% vs. QSPI NOR; ECC ensures ASIL-B-compliant code integrity. | Use Scenario: Holds gateway OS kernel, CAN/FlexRay protocol stacks, and OTA update staging area in Zonal E/E architectures. IC Role / Device Role / Timing Role: High-reliability firmware repository with sector-level write protection; RSTO# coordinates SoC+MCU reset sequencing during firmware rollback. Use Value: 256 KB uniform erase sectors enable atomic OTA patching; AEC-Q100 Grade 2 rating guarantees operation at 105°C under hood. |
| Electric Powertrain Inverter Control | Commercial Vehicle Telematics Module |
Use Scenario: Stores motor control algorithms, fault logs, and calibration tables in high-vibration, high-temperature inverter control units. IC Role / Device Role / Timing Role: Real-time firmware storage with deterministic 96 ns random access; INT# alerts MCU on ECC-detected bit flips during runtime. Use Value: 20-year data retention prevents calibration drift over vehicle lifetime; deep power-down mode extends battery-backed operation. | Use Scenario: Hosts telematics OS, GNSS firmware, and cellular modem configuration in fleet management terminals exposed to wide ambient temperature swings. IC Role / Device Role / Timing Role: Dual-voltage (1.8 V/3.0 V) compatibility allows shared power rail with LTE modem; CRC validates firmware integrity post-OTA download. Use Value: 100,000 erase cycles support frequent firmware updates over 10+ year service life; 4 KB parameter sectors isolate IMEI and carrier profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed NOR flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY15B104QN-PSOC | 4 Mb Quad SPI FRAM; no erase latency, unlimited endurance, but max 40 MBps throughput | Limited to small config/data storage-not suitable for full boot image storage | Select when write-cycle durability and zero-latency writes outweigh throughput needs |
| S26KS512SDABHM020 | Same 512 Mb density, but 3.0 V I/O, single-ended clock, 200 MBps max read, 100 MHz clock | Compatible with legacy 3.0 V controller designs lacking differential clock capability | Select for cost-sensitive industrial systems where 166 MHz DDR timing is not required |
Compared with CY15B104QN-PSOC and S26KS512SDABHM020, S26KL512SDABHM030 uniquely balances automotive-grade reliability, DDR bandwidth, and HYPERBUS™ pin efficiency-making it the only option supporting ASIL-B boot code execution at 333 MBps in AEC-Q100 Grade 2 environments.
Availability
S26KL512SDABHM030 is available at Aetrix Electronics and suitable for ADAS domain controllers, automotive gateways, electric powertrain inverters, and commercial telematics modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for S26KL512SDABHM030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and automotive qualification expertise.
This part belongs to the HYPERFLASH™ family-designed specifically for high-bandwidth, low-pin-count firmware storage in safety-critical automotive ECUs using the standardized HYPERBUS™ interface.
FAQ
What voltage levels does S26KL512SDABHM030 support for I/O and core operation?
S26KL512SDABHM030 operates with 1.8 V I/O and 1.8 V core supply (VCC/VCCQ). It is not rated for 3.0 V I/O operation-unlike the S26KSxxx variant-and requires strict 1.8 V supply regulation with ±5% tolerance per datasheet Section 11.4.
How does RWDS function during read operations, and why is it critical for timing?
RWDS is an output strobe edge-aligned to read data transitions, generated by the device to indicate valid data windows. It is referenced to CK/CK# edges and essential for the host to sample DQ correctly in DDR mode; mismatched RWDS-to-DQ skew causes read corruption, especially above 100 MHz.
Can S26KL512SDABHM030 replace standard parallel NOR flash without redesigning the PCB?
No-S26KL512SDABHM030 uses a 24-ball FBGA package and HYPERBUS™ 12-signal interface (CK/CK#, CS#, DQ[7:0], RWDS, INT#, RSTO#), which differs fundamentally from parallel NOR's 48+ pin count and asynchronous interface. A new controller and layout are required.
What is the role of the 1024-byte one-time programmable (OTP) array?
The OTP array provides immutable storage for cryptographic keys, hardware serial numbers, or calibration constants that must survive field updates and resist tampering. It is programmed once during manufacturing and cannot be erased-ensuring root-of-trust integrity for secure boot implementations.
S26KL512SDABHM030 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
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S26KL512SDABHM030 FAQ
1.How can I place an order for S26KL512SDABHM030 through Aetrix?
Please submit a Request for Quotation (RFQ) for S26KL512SDABHM030 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S26KL512SDABHM030 reliable?
The price and inventory of S26KL512SDABHM030 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KL512SDABHM030 is usually 5 days.
3.What payment methods are accepted for S26KL512SDABHM030?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KL512SDABHM030 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S26KL512SDABHM030?
S26KL512SDABHM030 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S26KL512SDABHM030 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S26KL512SDABHM030?
For technical support, including S26KL512SDABHM030 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KL512SDABHM030 requirements.
6.How does Aetrix verify that S26KL512SDABHM030 is sourced from the original manufacturer or authorized distributors?
All S26KL512SDABHM030 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KL512SDABHM030 meets industry standards.
7.What is the process for return or replacement of S26KL512SDABHM030?
All S26KL512SDABHM030 units undergo pre-shipment inspection (PSI). If there is an issue with S26KL512SDABHM030, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S26KL512SDABHM030 part is unused and in its original packaging.
Return procedure for S26KL512SDABHM030:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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