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Nexperia USA Inc. S26KL512SDABHN020
- Part No.:
- S26KL512SDABHN020
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Memory
- Package:
- -
- Datasheet:
-
S26KL512SDABHN020.pdf
- Description:
- S26KL512S - 3V 512MBIT, HYPERFLA
- Quantity:
- Payment:
- Shipping:
Inventory:992
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Product details
Overview
S26KL512SDABHN020 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sectors and optional 4-KB parameter sectors, and operates across –40°C to +105°C (Industrial Plus grade). Used in automotive ADAS domain controllers for fast boot code execution.
For engineers reviewing the S26KL512SDABHN020 datasheet, S26KL512SDABHN020 pinout, S26KL512SDABHN020 application, or S26KL512SDABHN020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), ECC 1-bit correction/2-bit detection, RWDS-synchronized DDR read alignment, and AEC-Q100 Grade 2 qualification for automotive embedded storage.
Technical Context
The device implements a DDR center-aligned read strobe (DCARS) architecture where command/address and data are transferred over the same 8-bit DQ bus using double-data-rate signaling synchronized to CK/CK#. Read data is edge-aligned to RWDS transitions, while commands are center-aligned to clock edges.
It integrates two parallel control units: Host Interface Controller (HIC) handles real-time signal monitoring and data transfer coordination with the HYPERBUS™ master, while Embedded Algorithm Controller (EAC) executes non-volatile programming/erase sequences-including sector erase, buffer programming, and protection configuration-without host intervention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 512 Mb (64 MB) - supports full firmware images for high-end microcontrollers and SoCs |
| Interface Standard | HYPERTBUS™ DDR - 11–12 signal count enables compact routing vs. legacy parallel NOR |
| Max Read Throughput | 333 MBps - achieved via 166 MHz differential clock and dual-edge DQ transfers |
| Random Access Time | 96 ns - initial latency of 5–16 clock cycles enables deterministic boot timing |
| ECC Capability | 1-bit correction / 2-bit detection - protects against single-event upsets in automotive environments |
| Operating Temperature | –40°C to +105°C (Industrial Plus) - qualified per AEC-Q100 Grade 2 for under-hood ECUs |
| Data Retention | 20 years - guaranteed at max operating temperature without refresh |
| Endurance | 100,000 program/erase cycles - sufficient for field firmware updates over product lifetime |
Pinout & Package
Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, 1.0 mm height - optimized for high-density automotive PCB layouts with thermal reliability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Defines DDR sampling edges; enables jitter-tolerant 166 MHz operation |
| CS# | Chip select (active low) | Enables device communication; HIGH places device in standby (25 µA) |
| RWDS | Read data strobe output | Edge-aligned timing reference for host to capture valid DQ read data |
| DQ[7:0] | Bi-directional DDR data bus | Transfers 16-bit words across both clock edges; no separate address bus required |
| INT# | Interrupt output | Signals Busy→Ready transition or ECC error detection event to host processor |
| RSTO# | Reset output | User-configurable LOW pulse for system-level power-on reset coordination |
Key Features
| Feature | Design Value |
|---|---|
| HYPERBUS™ DDR interface | Reduces signal count by >50% vs. parallel NOR while sustaining 333 MBps read speed |
| Configurable burst mode | Supports wrapped (16/32/64-byte) or linear bursts per transaction for flexible cache line alignment |
| 512-byte program buffer | Enables 1 MBps effective write speed via buffered programming vs. 4 KBps single-word writes |
| Volatile/non-volatile sector protection | Prevents accidental erase/write of critical boot sectors during field updates |
| Deep Power-Down mode | Draws only 4 µA (typical) with 300 µs wake-up - ideal for always-on vehicle modules |
Applications
| Automotive ADAS Domain Controller | Industrial PLC Firmware Storage |
|---|---|
Use Scenario: Stores boot firmware and safety-critical calibration data for radar/Ethernet domain controllers requiring sub-100 ms cold boot. IC Role / Device Role / Timing Role: High-speed non-volatile code storage with deterministic 96 ns random access and AEC-Q100 Grade 2 qualification. Use Value: Enables deterministic boot timing and ECC-protected execution directly from flash, eliminating need for external RAM copy. | Use Scenario: Holds firmware and configuration parameters for programmable logic controllers deployed in factory automation systems. IC Role / Device Role / Timing Role: Reliable long-term storage with 20-year retention and 100K endurance for infrequent field updates. Use Value: Eliminates external SPI flash + RAM combinations, reducing BOM count and board space in DIN-rail mounted controllers. |
| Medical Imaging System Boot Memory | 5G Baseband Unit Code Storage |
Use Scenario: Stores FPGA bitstreams and boot loaders for CT/MRI subsystems requiring rapid power-up and data integrity certification. IC Role / Device Role / Timing Role: Non-volatile storage with ISO/TS16949-aligned manufacturing and ECC-based fault detection. Use Value: Meets IEC 62304 Class C software requirements via hardware-level ECC and traceable lifecycle management. | Use Scenario: Hosts baseband processor firmware in outdoor 5G RU units exposed to wide temperature swings and EMI. IC Role / Device Role / Timing Role: High-throughput code execution memory with –40°C to +105°C operation and 333 MBps read bandwidth. Use Value: Supports real-time DSP loading without DRAM bottleneck, improving time-to-operational readiness after reboot. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed NOR flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY15B104QN-SXIT | 4 Mb Quad SPI FRAM; no erase latency, unlimited endurance, but 40 MBps max read speed | Best for frequent small writes (e.g., logging); unsuitable for large firmware images due to density limit | Select when write cycle count dominates over read bandwidth requirements |
| S26KS512SDABHN020 | Same HYPERBUS™ interface, identical package and pinout, but 256 Mb density and 1.8 V core/I/O only | Drop-in replacement where firmware size fits within 32 MB; lower cost for non-AEC-Q100 designs | Select when AEC-Q100 Grade 2 is not required and firmware image is ≤32 MB |
Compared with CY15B104QN-SXIT, S26KL512SDABHN020 provides 8× higher density and 8× faster read throughput but requires erase before reprogramming; compared with S26KS512SDABHN020, it adds AEC-Q100 Grade 2 qualification and supports 3.0 V I/O compatibility for mixed-voltage systems.
Availability
S26KL512SDABHN020 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLCs, medical imaging boot systems, and 5G baseband units requiring stable component supply, AEC-Q100 compliance, and high-speed code execution.
Supply support for S26KL512SDABHN020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS16949.
This part belongs to the HYPERFLASH™ family - designed specifically for high-bandwidth, low-pin-count code storage in automotive and industrial systems requiring deterministic boot performance and functional safety support.
FAQ
What voltage levels does S26KL512SDABHN020 support for VCC and VCCQ?
S26KL512SDABHN020 supports dual-voltage operation: VCC (core) is fixed at 1.8 V, while VCCQ (I/O) is configurable for either 1.8 V or 3.0 V. This allows interoperability with both 1.8 V and 3.0 V host processors without level-shifting circuitry, and is explicitly validated in the datasheet's "Valid combinations - standard" table.
Does S26KL512SDABHN020 require external pull-up resistors on RWDS or INT#?
Yes - RWDS is an open-drain output requiring an external 4.7 kΩ pull-up to VCCQ, and INT# is also open-drain with recommended 10 kΩ pull-up to host controller's I/O supply. These values ensure proper signal rise time and noise immunity in automotive harness environments, as specified in Section 11.5 (DC characteristics) of the datasheet.
How is ECC handled during read operations?
ECC checking is automatic and transparent during every read access: the device detects 2-bit errors and corrects 1-bit errors in real time using on-die logic. When a correctable error occurs, INT# asserts; uncorrectable errors trigger a bus error response. No host software intervention is needed for correction, though error status is accessible via the ID-CFI ASO map at offset 0x004C.
Can S26KL512SDABHN020 be used with a host that lacks differential clock capability?
No - S26KL512SDABHN020 mandates differential CK/CK# inputs for 1.8 V operation and does not support single-ended clocking. The 3.0 V variants (e.g., S26KL512TDABHN020) use single-ended CK only, but this specific part number is 1.8 V I/O and requires matched-pair routing and termination for CK/CK# to meet setup/hold timing at 166 MHz.
S26KL512SDABHN020 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
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S26KL512SDABHN020 FAQ
1.How can I place an order for S26KL512SDABHN020 through Aetrix?
Please submit a Request for Quotation (RFQ) for S26KL512SDABHN020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S26KL512SDABHN020 reliable?
The price and inventory of S26KL512SDABHN020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KL512SDABHN020 is usually 5 days.
3.What payment methods are accepted for S26KL512SDABHN020?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KL512SDABHN020 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S26KL512SDABHN020?
S26KL512SDABHN020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S26KL512SDABHN020 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S26KL512SDABHN020?
For technical support, including S26KL512SDABHN020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KL512SDABHN020 requirements.
6.How does Aetrix verify that S26KL512SDABHN020 is sourced from the original manufacturer or authorized distributors?
All S26KL512SDABHN020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KL512SDABHN020 meets industry standards.
7.What is the process for return or replacement of S26KL512SDABHN020?
All S26KL512SDABHN020 units undergo pre-shipment inspection (PSI). If there is an issue with S26KL512SDABHN020, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S26KL512SDABHN020 part is unused and in its original packaging.
Return procedure for S26KL512SDABHN020:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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