Infineon Technologies S26KL512SDABHN023

Overview

S26KL512SDABHN023 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package for embedded boot code storage.

For engineers reviewing the S26KL512SDABHN023 datasheet, S26KL512SDABHN023 pinout, S26KL512SDABHN023 application, or S26KL512SDABHN023 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access, 118 ns CS# to first word), RWDS-synchronized DDR read alignment, sector protection configuration, deep power-down current (8 µA typical), and AEC-Q100 grade 3 qualification for automotive control modules.

Technical Context

This device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with RWDS edge-aligned to data transitions during reads and CK/CK# differential clocking enabling precise timing capture. The internal MIRRORBIT™ architecture organizes memory into 32-byte pages composed of two 16-byte half-pages, requiring two clock cycles for address/burst-type setup followed by configurable initial latency (5–16 cycles).

Embedded Algorithm Controller (EAC) manages all non-volatile operations: single-word programming (500 µs), 512-byte buffer programming (475 µs), and 256-KB sector erase (930 ms), while Host Interface Controller (HIC) handles real-time signal monitoring, RWDS generation, and RSTO#/INT# assertion for system-level reset and ECC interrupt signaling.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash memory applications.

Compared with S26KL512SDABHN023, the Cypress alternative trades bandwidth and timing precision for interface simplicity, while the Winbond part sacrifices speed and hardware ECC for ultra-low pin count - making the Infineon device optimal for deterministic boot and safety-critical firmware storage.

Availability

S26KL512SDABHN023 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC firmware storage, medical imaging boot ROMs, and 5G baseband unit configuration memory requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S26KL512SDABHN023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification under ISO/TS16949.

The HYPERFLASH™ product line targets high-reliability embedded systems requiring fast, deterministic boot and firmware execution - specifically designed for automotive ECUs, industrial controllers, and medical devices where NOR flash performance and data integrity are critical.

FAQ

What is the purpose of the RWDS signal in S26KL512SDABHN023?

RWDS (Read Data Strobe) is an output signal synchronized to read data transitions on DQ[7:0]. It indicates valid data windows during DDR read bursts and is edge-aligned with data - not clock-aligned - enabling precise capture timing for high-speed hosts. RWDS is used exclusively for reads and is inactive during write operations or idle states.

Does S26KL512SDABHN023 support both 1.8 V and 3.0 V I/O operation?

No - S26KL512SDABHN023 is a 1.8 V I/O variant only, requiring differential CK/CK# clocking and supporting up to 166 MHz operation. The 3.0 V I/O variants (e.g., S26KL512SDABHN021) use single-ended CK and are limited to 100 MHz. Voltage selection is fixed per part number and not user-configurable.

How does the embedded algorithm controller (EAC) affect firmware update design?

The EAC executes all program/erase operations autonomously using internal state machines, eliminating need for host-managed timing loops. Host writes command sequences to specific address locations, then polls INT# or status registers. This simplifies driver development but requires strict adherence to command timing and sequence rules defined in the datasheet's embedded operations section.

Can S26KL512SDABHN023 be used in place of standard parallel NOR flash without redesigning the PCB?

No - HYPERBUS™ requires different signal routing: differential CK/CK#, RWDS, and shared DQ bus for commands/addresses/data. Pinout and timing constraints differ significantly from parallel NOR. Migration requires controller firmware updates, layout revision for controlled impedance CK/CK# traces, and validation of RWDS setup/hold margins per HYPERBUS™ specification.