Infineon Technologies S26KL512SDABHV023

Overview

S26KL512SDABHV023 from Infineon is a 512 Mb (64 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DDR data bus (DQ[7:0]), and read data strobe (RWDS). It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, and supports industrial-plus temperature range (–40°C to +105°C) in 24-ball FBGA package for embedded boot code storage in automotive ADAS controllers.

For engineers reviewing the S26KL512SDABHV023 datasheet, S26KL512SDABHV023 pinout, S26KL512SDABHV023 application, or S26KL512SDABHV023 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access, 118 ns CS# to first word), ECC 1-bit correction/2-bit detection capability, RWDS-synchronized DDR read alignment, and deep power-down current (8 µA typical) for low-power firmware update scenarios.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfer, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ technology for high-density NOR storage and supports both wrapped (16/32/64-byte) and linear burst modes with hybrid burst configuration.

HYPERBUS™ protocol enables command/address/data multiplexing over the same 8-bit DQ bus using DDR timing; read operations use edge-aligned data relative to RWDS transitions, and write operations require center-aligned command/address with precise setup/hold timing referenced to CK/CK#. Initial latency ranges from 5–16 clock cycles depending on configuration.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KL512SDABHV023, the Cypress alternative trades temperature grade for lower cost in non-automotive settings, while the Macronix part shifts to octal SPI-reducing timing margin and increasing host software complexity due to missing hardware ECC and RWDS-based DDR alignment.

Availability

S26KL512SDABHV023 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, and medical imaging system boot memory requiring stable component supply across extended temperature and long-lifecycle programs.

Supply support for S26KL512SDABHV023 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification infrastructure.

This device belongs to the HYPERFLASH™ family - designed specifically for high-speed, low-pin-count boot memory in automotive, industrial, and communications systems where DDR timing predictability and ECC reliability are mandatory.

FAQ

What is the minimum wake-up time from Deep Power-Down mode?

The S26KL512SDABHV023 requires 300 µs to exit Deep Power-Down mode and resume normal operation. This fixed wake-up latency is specified across the full industrial-plus temperature range and does not vary with VCC or clock frequency. The device automatically reinitializes internal state and validates memory array integrity before accepting new commands.

Does RWDS function during write operations?

No, RWDS operates exclusively as a read data strobe and remains inactive during write transactions. The datasheet explicitly states that HYPERFLASH™ memories use RWDS only for read operations to indicate valid data windows synchronized to CK/CK# edges. Write data timing is governed solely by DQ setup/hold relative to CK.

How is sector protection configured - volatile or non-volatile?

Sector protection supports both volatile (cleared on power cycle) and non-volatile (retained after reset) modes, controlled independently per 256-KB sector via dedicated status registers. Non-volatile protection is enabled using the Write Protection Register command and persists through power loss, making it suitable for safeguarding bootloader regions in safety-critical systems.

Can this device be used with a 3.0 V I/O interface?

No - S26KL512SDABHV023 is a 1.8 V I/O variant (denoted by 'D' in the part number suffix). It requires 1.8 V VCCQ and supports differential clock signaling (CK/CK#). The 3.0 V I/O version is designated as S26KL512SBABHV023 and uses single-ended clock; mixing voltage variants risks interface failure and violates absolute maximum ratings.