Infineon Technologies S26KS128SDABHA030

Overview

S26KS128SDABHA030 from Infineon Technologies is a 128 Mb (16 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, 1.8 V I/O, differential clock (CK/CK#), 8-bit data bus (DQ[7:0]), and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, supports 256-KB uniform sector erase, 1-bit ECC correction/2-bit detection, and operates from –40°C to +105°C (Industrial Plus grade) in automotive and industrial embedded boot memory applications.

For engineers reviewing the S26KS128SDABHA030 datasheet, S26KS128SDABHA030 pinout, S26KS128SDABHA030 application, or S26KS128SDABHA030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), RWDS-synchronized DDR read alignment, configurable burst length (16/32/64 bytes), deep power-down current (4 µA), and AEC-Q100 Grade 2 qualification for automotive control units.

Technical Context

The S26KS128SDABHA030 implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS timing alignment, while Embedded Algorithm Controller (EAC) executes autonomous program/erase sequences without host intervention. Its MIRRORBIT™ NOR core enables word-wide (16-bit) addressing and page-aligned 32-byte random reads.

It uses center-aligned command/address transfers and edge-aligned read data relative to RWDS transitions, supporting both wrapped (circular) and linear burst modes. The device requires no wake-up from active clock stop (12 mA) or standby (25 µA), and features RSTO# for system-level power-on reset with user-configurable LOW pulse duration.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash memory applications.

Compared with S26KL128SDABHA020, this part adds automotive-grade reliability and wider temperature tolerance; compared with S26KS256SDABHA030, it offers optimal cost-per-MB for compact boot memory designs without over-provisioning.

Availability

S26KS128SDABHA030 is available at Aetrix Electronics and suitable for automotive ADAS modules, industrial PLCs, medical imaging controllers, and 5G small cell baseband processors requiring stable component supply, AEC-Q100 compliance, and high-speed boot memory performance.

Supply support for S26KS128SDABHA030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and memory solutions for automotive, industrial, and communications markets.

This device belongs to the HYPERFLASH™ family - designed specifically to replace legacy parallel NOR and QSPI flash in high-performance embedded systems demanding >200 MBps read bandwidth and deterministic low-latency access.

FAQ

What voltage levels does the S26KS128SDABHA030 support for VCC and VCCQ?

The device operates with 1.8 V for both core (VCC) and I/O (VCCQ) supply rails. It is not compatible with 3.0 V I/O operation - the 'D' suffix in the part number denotes the 1.8 V-only variant. All timing specifications (including 166 MHz max clock rate and 96 ns tACC) are guaranteed only at 1.8 V.

Does the S26KS128SDABHA030 require external termination resistors for the CK/CK# or DQ lines?

Yes - the datasheet specifies 40 Ω series source termination on CK/CK# and 50 Ω parallel AC termination on DQ[7:0] at the memory side. These values are mandatory to meet setup/hold timing margins at 166 MHz and prevent signal integrity issues in high-speed DDR routing.

How is the RWDS signal used during read operations, and can it be disabled?

RWDS is an active output driven by the device during read data transfer and cannot be disabled. It toggles synchronously with read data edges and must be used by the host controller to latch DQ values. Its timing relationship to CK/CK# is defined in the DCARS (DDR Center-Aligned Read Strobe) specification and is fundamental to correct data capture.

Is the 1024-byte one-time programmable (OTP) array accessible via standard read commands?

No - the OTP array resides in a separate address space (0x0000_0000–0x0000_03FF) and requires dedicated unlock sequences and command codes (e.g., 0x60 followed by 0xD0) to enable write access. Standard read commands access only the main flash array; OTP reads use the same timing but require prior configuration of the OTP enable bit in the configuration register.