Nexperia USA Inc. S26KS128SDGBHA030

Overview

S26KS128SDGBHA030 from Infineon Technologies is a 128 Mb (16 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DDR data bus (DQ[7:0]), and read-data strobe (RWDS). It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used in automotive ADAS domain controllers for fast boot code execution.

For engineers reviewing the S26KS128SDGBHA030 datasheet, S26KS128SDGBHA030 pinout, S26KS128SDGBHA030 application, or S26KS128SDGBHA030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), RWDS-synchronized DDR read alignment, sector protection configurability, deep power-down current (4 µA), and AEC-Q100 grade 3 qualification for automotive use.

Technical Context

This device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS timing alignment, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ floating-gate technology for high endurance and retention.

HYPERBUS™ protocol enables command/address/data multiplexing over the same 8-bit DQ bus using DDR edge-aligned transfers; read operations require initial latency of 5–16 clock cycles, followed by wrapped (16/32/64-byte) or linear burst modes. DCARS (DDR Center-Aligned Read Strobe) ensures precise data capture relative to CK/CK# edges.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous NOR flash applications.

Compared with S26KS128SDGBHA030, the S26KS128SDABHA020 trades bandwidth and noise immunity for 3.0 V compatibility, while S26KL128SDGBHA030 extends thermal capability and automotive qualification at identical performance-both retain full HYPERBUS™ protocol and sector architecture compatibility.

Availability

S26KS128SDGBHA030 is available at Aetrix Electronics and suitable for automotive ADAS domain controllers, industrial PLC firmware storage, and medical imaging system boot memory requiring stable component supply across multi-year production cycles.

Supply support for S26KS128SDGBHA030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This part belongs to the HYPERFLASH™ family-designed specifically for high-speed, low-pin-count code storage in automotive and industrial systems requiring deterministic boot and robust data integrity.

FAQ

What is the purpose of the RWDS signal in S26KS128SDGBHA030?

RWDS (Read Data Strobe) is an output signal synchronized to read data edges on DQ[7:0]. It indicates valid data windows during DDR reads and is referenced to CK/CK# transitions. Unlike clock signals, RWDS is driven only during read operations and enables source-synchronous data capture without requiring tight board-level skew control between clock and data lines.

Does S26KS128SDGBHA030 support execute-in-place (XIP) operation?

Yes, S26KS128SDGBHA030 supports XIP via its synchronous HYPERBUS™ interface and deterministic 96 ns random access time. When connected to a compatible host controller with HYPERBUS™ PHY, the processor can fetch instructions directly from flash without copying to RAM, reducing boot latency and SRAM footprint in resource-constrained systems.

How does the 512-byte program buffer improve write efficiency?

The 512-byte buffer allows the host to issue a full buffer write command before internal programming begins. This decouples host transfer timing from flash core programming latency (e.g., 475 µs for 512-byte buffer vs. 500 µs per 2-byte word), enabling continuous data streaming and reducing effective write time per byte by up to 200× compared to single-word programming.

What is the function of the RSTO# pin and how is it configured?

RSTO# is a user-configurable open-drain reset output used to coordinate system-level power-on reset sequencing. Its LOW pulse duration (programmable via configuration register) can be set to match downstream PMIC or MCU reset timing requirements, ensuring reliable initialization across voltage rail ramp-up profiles without external timing components.