Nexperia USA Inc. S26KS128SDGBHB030

Overview

S26KS128SDGBHB030 from Infineon is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package for embedded boot code storage.

For engineers reviewing the S26KS128SDGBHB030 datasheet, S26KS128SDGBHB030 pinout, S26KS128SDGBHB030 application, or S26KS128SDGBHB030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), RWDS-synchronized DDR read behavior, sector protection configuration, deep power-down current (4 µA), and AEC-Q100 grade 3 qualification for automotive control modules.

Technical Context

This device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with RWDS output aligned to CK/CK# edges during reads. It uses MIRRORBIT™ architecture enabling 16-bit word-wide accesses on 16-byte-aligned boundaries and supports both wrapped (16/32/64-byte) and linear burst modes.

The embedded algorithm controller (EAC) manages all non-volatile operations - including 512-byte buffer programming (475 µs), 256-KB sector erase (930 ms), and volatile/non-volatile sector protection - without host intervention. DCARS (DDR Center-Aligned Read Strobe) ensures precise data capture timing relative to RWDS transitions.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KS128SDGBHB030, the Cypress alternative lacks 1.8 V compatibility and DDR performance, while the Winbond part trades interface simplicity for >8× lower read bandwidth and no built-in ECC - making the Infineon device uniquely suited for safety-critical, high-throughput embedded boot applications.

Availability

S26KS128SDGBHB030 is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC firmware storage, medical imaging boot ROMs, and avionics display system code storage requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S26KS128SDGBHB030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

The HYPERFLASH™ product line targets high-performance embedded systems needing fast, reliable, low-pin-count code storage - specifically designed to replace parallel NOR flash in automotive, industrial, and medical applications demanding deterministic boot and long-term data integrity.

FAQ

What is the purpose of the RWDS signal in S26KS128SDGBHB030?

RWDS (Read Data Strobe) is an output signal synchronized to CK/CK# transitions that indicates valid data windows on the DQ[7:0] bus during read operations. It enables precise DDR data capture by the host controller and is used exclusively for reads - not for writes or command transfers - ensuring timing margin in high-speed interfaces.

Does S26KS128SDGBHB030 support both 1.8 V and 3.0 V I/O operation?

No - S26KS128SDGBHB030 is a 1.8 V I/O device only, with differential clock inputs (CK/CK#) and mandatory 1.8 V VCCQ supply. It does not support 3.0 V I/O signaling; attempting to operate at 3.0 V violates absolute maximum ratings and may cause permanent damage.

How is sector protection configured on this device?

Sector protection is implemented via volatile (register-based) and non-volatile (OTP-backed) methods per 256-KB sector. Protection status is controlled through specific command sequences written to the device's command interface, and can be locked permanently using the 1024-byte OTP array to prevent unauthorized modification.

What is the wake-up time from Deep Power-Down mode?

The wake-up time from Deep Power-Down mode is 300 µs, measured from CS# de-assertion to readiness for the next command. During this period, the internal oscillator stabilizes and voltage regulators settle - no additional host delay or polling is required beyond this fixed interval.