Infineon Technologies S26KS128SDGBHI030

Overview

S26KS128SDGBHI030 from Infineon Technologies is a 128 Mb (16 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, supporting 1.8 V I/O and differential clock (CK/CK#), delivering 333 MBps sustained read throughput at 166 MHz, 96 ns initial random access time, and ECC 1-bit correction/2-bit detection - deployed in automotive infotainment boot code storage.

For engineers reviewing the S26KS128SDGBHI030 datasheet, S26KS128SDGBHI030 pinout, S26KS128SDGBHI030 application, or S26KS128SDGBHI030 equivalent, key selection criteria include HYPERBUS™ timing compliance (tACC ≤ 96 ns), RWDS-synchronized DDR read strobe behavior, sector protection granularity (256 KB uniform + optional 4 KB parameter sectors), and AEC-Q100 Grade 2 qualification (–40°C to +105°C).

Technical Context

This device implements a DDR center-aligned read strobe (DCARS) architecture where command/address and data are transferred over the same 8-bit DQ bus using double-data-rate signaling synchronized to CK/CK#. RWDS output is edge-aligned to CK transitions during reads, enabling precise data capture by the host controller.

The embedded algorithm controller (EAC) manages all non-volatile operations - including 512-byte buffer programming (475 µs), 256 KB sector erase (930 ms), and volatile/non-volatile sector protection - without host intervention. Memory array uses MIRRORBIT™ technology for high endurance (100,000 cycles) and 20-year data retention.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with S26KL128SDGBHI030, this part delivers 66% higher bandwidth and automotive-grade thermal robustness; versus S26KS256SDGBHI030, it offers optimal cost-per-MB for compact boot images while maintaining identical timing, ECC, and qualification - ideal for space-constrained ADAS ECUs.

Availability

S26KS128SDGBHI030 is available at Aetrix Electronics and suitable for automotive ADAS modules, industrial PLCs, medical imaging subsystems, and avionics display controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for S26KS128SDGBHI030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to the HYPERFLASH™ family - designed specifically to replace parallel NOR and QSPI flash in bandwidth-constrained embedded systems requiring deterministic, high-speed code execution from non-volatile memory.

FAQ

What voltage levels does S26KS128SDGBHI030 support for I/O and core operation?

The device supports 1.8 V for both VCC and VCCQ, with all I/O signals (CK/CK#, DQ[7:0], RWDS, etc.) referenced to 1.8 V. It does not support mixed-voltage operation or 3.0 V I/O - use S26KL128SDGBHI030 for 3.0 V systems. Absolute maximum ratings specify –0.5 V to 2.2 V on I/O pins, and DC characteristics are fully characterized at 1.8 V ±5%.

How is the RWDS signal used during read operations?

RWDS is an output-only strobe generated by the device during read bursts, edge-aligned to CK transitions. Host controllers use RWDS edges (not CK) to latch DQ data - ensuring timing margin against clock skew. RWDS remains inactive during write and command phases, and its assertion timing is defined in Table 12.2 of the datasheet (tRWDS, tRWDH, tRWDV).

Does S26KS128SDGBHI030 support hardware write protection independent of software commands?

Yes - it implements both volatile (via status register bits) and non-volatile (OTP lock bits) sector protection. The 256 KB uniform sectors and optional 4 KB parameter sectors can be individually locked. Hardware protection persists through power cycles when non-volatile bits are programmed, and requires dedicated unlock sequences to modify - preventing accidental overwrite during field updates.

What is the purpose of the PSC and PSC# pins?

PSC (Power Supply Control) and PSC# form a differential pair that enables Deep Power-Down mode. When driven to specific logic states (PSC = HIGH, PSC# = LOW), the device enters ultra-low-power state (8 µA typical), retaining memory contents. Exit requires CS# deassertion followed by 300 µs stabilization before issuing first command - documented in Section 11.8 of the datasheet.