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Nexperia USA Inc. S26KS128SDGBHM030
- Part No.:
- S26KS128SDGBHM030
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Memory
- Package:
- -
- Datasheet:
-
S26KS128SDGBHM030.pdf
- Description:
- S26KS512S - 3V 512MBIT, HYPERFLA
- Quantity:
- Payment:
- Shipping:
Inventory:1,018
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Product details
Overview
S26KS128SDGBHM030 from Infineon is a 128 Mb (16 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DDR data bus (DQ[7:0]), RWDS read strobe, and 166 MHz clock rate for 333 MBps sustained read throughput. It features 256-KB uniform sectors, 100,000 program/erase cycles, 20-year data retention, ECC 1-bit correction/2-bit detection, and industrial temperature range (–40°C to +85°C), deployed in automotive infotainment boot storage.
For engineers reviewing the S26KS128SDGBHM030 datasheet, S26KS128SDGBHM030 pinout, S26KS128SDGBHM030 application, or S26KS128SDGBHM030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns tACC), RWDS-synchronized DDR read alignment, configurable burst length (16/32/64 bytes), deep power-down current (4 µA), and AEC-Q100 Grade 3 qualification for automotive use.
Technical Context
This device implements a DDR center-aligned read strobe (DCARS) architecture where command/address is center-aligned to CK/CK#, while read data is edge-aligned to RWDS transitions - enabling deterministic timing closure in high-speed host interfaces. Its embedded algorithm controller (EAC) autonomously executes sector erase and buffer programming without host intervention.
The HYPERBUS™ protocol multiplexes commands, addresses, and data over the same 8-bit DQ bus using DDR transfers, requiring precise setup/hold relative to CK/CK# edges and RWDS assertion timing. Internal MIRRORBIT™ array architecture enables simultaneous page fetch and burst output to sustain 333 MBps linear reads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 128 Mb (16 MB) - fixed capacity for boot code and firmware storage in resource-constrained systems |
| Interface Standard | HYPERTBUS™ DDR - 8-bit bidirectional data bus with differential clock (CK/CK#) and RWDS strobe for timing-critical read alignment |
| Max Read Throughput | 333 MBps - achieved at 166 MHz clock with linear burst mode, enabling fast application loading |
| Random Access Time | 96 ns tACC - initial latency for first word access, critical for interrupt response and real-time code execution |
| Endurance & Retention | 100,000 cycles / 20 years - validated for automotive ECU firmware update cycles and long-life deployment |
| Power Modes | Deep Power-Down: 4 µA @ 85°C - enables ultra-low standby power in always-on vehicle modules |
| ECC Capability | 1-bit correction / 2-bit detection - hardware-level data integrity protection for safety-critical boot images |
Pinout & Package
Package: 24-ball FBGA (VAA024), 5 × 5 mm, 0.8 mm pitch, RoHS-compliant, suitable for automated SMT assembly in automotive PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Reference for all DDR timing; CK rising/falling edges sample command/address/data on DQ; CK# provides noise immunity |
| CS# | Chip select (active low) | Enables device communication; HIGH places device in standby or deep power-down mode |
| RWDS | Read data strobe output | Indicates valid read data windows; edges aligned to DQ transitions during read bursts |
| DQ[7:0] | DDR bidirectional data bus | Carries commands, addresses, and 16-bit data words on both clock edges; requires controlled impedance routing |
| INT# | Interrupt output | Asserted on ECC error detection or busy-to-ready transition, enabling host exception handling |
| RSTO# | Reset output | Configurable LOW pulse for system power-on reset synchronization; driven by internal POR circuitry |
Key Features
| Feature | Design Value |
|---|---|
| HYPERBUS™ DDR Interface | Reduces signal count vs. parallel NOR: only 11 signals (1.8 V) enable 333 MBps read speed without address latching |
| Configurable Burst Length | Supports 16/32/64-byte wrapped bursts or linear bursts - optimizes cache line fill and DMA transfer efficiency |
| Embedded Algorithm Controller (EAC) | Executes autonomous sector erase and 512-byte buffer programming - eliminates host CPU overhead during firmware updates |
| Advanced Sector Protection | Volatile and non-volatile lock bits per 256-KB sector - prevents accidental overwrite of bootloader or calibration data |
| AEC-Q100 Grade 3 | Qualified for –40°C to +85°C operation with ISO/TS16949 process control - meets automotive functional safety requirements |
Applications
| Automotive Instrument Cluster | ADAS Domain Controller Boot Storage |
|---|---|
Use Scenario: Stores boot firmware and GUI assets for real-time rendering on digital dashboards with <500 ms startup time. IC Role / Device Role / Timing Role: Primary boot memory mapped directly to MCU's XIP interface; delivers 333 MBps linear reads to preload OS kernel and driver modules. Use Value: 96 ns tACC and DCARS timing ensure deterministic instruction fetch latency; ECC protects against single-event upsets in radiation-prone vehicle cabins. | Use Scenario: Holds secure boot loader and sensor fusion firmware updated over CAN FD, requiring tamper-resistant storage. IC Role / Device Role / Timing Role: Non-volatile code storage with AEC-Q100 Grade 3 qualification; RSTO# synchronizes domain controller power sequencing. Use Value: 256-KB uniform sectors allow atomic firmware partitioning; 100K-cycle endurance supports field OTA updates across 15-year vehicle lifecycle. |
| Industrial PLC Firmware Storage | Medical Imaging System Configuration Memory |
Use Scenario: Stores ladder logic programs and I/O configuration tables in programmable logic controllers operating continuously in factory environments. IC Role / Device Role / Timing Role: High-reliability NOR flash with deep power-down (4 µA) for energy-efficient standby during maintenance windows. Use Value: Sector protection prevents unauthorized reprogramming; 20-year retention ensures firmware integrity across extended equipment service life. | Use Scenario: Retains calibration coefficients, DICOM metadata templates, and regulatory compliance flags in FDA-cleared imaging devices. IC Role / Device Role / Timing Role: Safety-critical parameter storage with ECC and CRC validation; accessed via deterministic HYPERBUS™ timing for audit-trail consistency. Use Value: One-time-programmable 1024-byte array secures cryptographic keys; AEC-Q100 process controls guarantee traceable manufacturing history. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| S26KS128SDABHM020 | Same density and package, but 3.0 V I/O (not 1.8 V); max clock 100 MHz → 200 MBps read | Targets legacy 3.0 V host interfaces; lacks differential clock support and DCARS timing | Select when host PHY does not support 1.8 V differential signaling or requires backward compatibility with older HYPERBUS™ designs |
| MX25L12833FZCII00 | Standard SPI Quad I/O NOR flash; 128 Mb, 133 MHz, no DDR or RWDS; uses standard SPI command set | Lower bandwidth (up to ~66 MBps), simpler interface; no ECC or AEC-Q100 qualification | Select for cost-sensitive industrial applications where 333 MBps read speed and automotive qualification are not required |
Compared with S26KS128SDABHM020, this part delivers 66% higher read bandwidth and deterministic DDR timing; versus MX25L12833FZCII00, it provides automotive-grade reliability, hardware ECC, and HYPERBUS™-optimized throughput for real-time boot and firmware execution.
Availability
S26KS128SDGBHM030 is available at Aetrix Electronics and suitable for automotive infotainment systems, ADAS domain controllers, and industrial PLCs requiring stable component supply with full AEC-Q100 traceability and long-term lifecycle support.
Supply support for S26KS128SDGBHM030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS16949.
This device belongs to the HYPERFLASH™ family - designed specifically for high-bandwidth, low-pin-count boot and firmware storage in automotive and industrial systems demanding AEC-Q100 compliance and deterministic DDR timing.
FAQ
What is the minimum wake-up time from Deep Power-Down mode?
The S26KS128SDGBHM030 requires 300 µs to exit Deep Power-Down mode and become ready for read operations. This wake-up time is fixed and independent of temperature or VCC level, verified across the full industrial temperature range (–40°C to +85°C) per datasheet Section 11.8.
Does this device support true random access to individual 16-bit words?
No - all accesses are burst-oriented. The smallest random access unit is a 32-byte page (two 16-byte half-pages). Even single-word reads require a burst transaction starting at a 16-byte-aligned address, with initial latency of 5–16 clock cycles depending on configuration.
How is the RWDS signal used during write operations?
RWDS is not used during write operations. Per datasheet Section 1.1 and Figure 1, RWDS functions exclusively as a read data strobe output. During writes, the host drives DQ[7:0] synchronously to CK/CK#, and RWDS remains in high-impedance state.
Can the RSTO# pulse width be configured for different reset durations?
Yes - the RSTO# LOW period is user-configurable via non-volatile register settings. Valid durations include 100 µs, 1 ms, 10 ms, and 100 ms, selected during initialization to match downstream power management IC timing requirements.
S26KS128SDGBHM030 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- -
- Memory Type:
- -
- Memory Format:
- -
- Technology:
- -
- Memory Size:
- -
- Memory Organization:
- -
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
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S26KS128SDGBHM030 FAQ
1.How can I place an order for S26KS128SDGBHM030 through Aetrix?
Please submit a Request for Quotation (RFQ) for S26KS128SDGBHM030 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for S26KS128SDGBHM030 reliable?
The price and inventory of S26KS128SDGBHM030 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KS128SDGBHM030 is usually 5 days.
3.What payment methods are accepted for S26KS128SDGBHM030?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KS128SDGBHM030 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for S26KS128SDGBHM030?
S26KS128SDGBHM030 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your S26KS128SDGBHM030 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for S26KS128SDGBHM030?
For technical support, including S26KS128SDGBHM030 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KS128SDGBHM030 requirements.
6.How does Aetrix verify that S26KS128SDGBHM030 is sourced from the original manufacturer or authorized distributors?
All S26KS128SDGBHM030 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KS128SDGBHM030 meets industry standards.
7.What is the process for return or replacement of S26KS128SDGBHM030?
All S26KS128SDGBHM030 units undergo pre-shipment inspection (PSI). If there is an issue with S26KS128SDGBHM030, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The S26KS128SDGBHM030 part is unused and in its original packaging.
Return procedure for S26KS128SDGBHM030:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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