NXP Semiconductors S26KS128SDGBHN030

Overview

S26KS128SDGBHN030 from Cypress Semiconductor is a 128 Mb (16 MB) HyperFlash™ synchronous NOR flash memory with 1.8V core/I/O, differential clock interface (CK/CK#), 8-bit DDR data bus (DQ[7:0]), and Read-Write Data Strobe (RWDS). It delivers 333 MBps sustained read throughput at 166 MHz, supports wrapped/linear burst modes, and integrates ECC 1-bit correction/2-bit detection for automotive-grade reliability.

For engineers reviewing the S26KS128SDGBHN030 datasheet, S26KS128SDGBHN030 pinout, S26KS128SDGBHN030 application, or S26KS128SDGBHN030 equivalent, key selection criteria include HyperBus DDR timing compliance, 24-ball FBGA package compatibility, AEC-Q100 Grade 2 qualification (–40°C to +105°C), and support for DCARS-enabled RWDS phase alignment in high-speed embedded boot applications.

Technical Context

The S26KS128SDGBHN030 implements Cypress's HyperBus interface - a low-pin-count, DDR-capable protocol using CK/CK# for command/address/data capture and RWDS for edge-aligned read data strobing. It operates exclusively in 1.8V I/O mode with 12 mandatory and optional signals, including PSC/PSC# for DDR Center Aligned Read Strobe (DCARS) functionality.

Internally, it uses MirrorBit® NOR architecture with uniform 256-KB erase sectors and a 512-byte write buffer. Embedded Algorithm Controller (EAC) manages program/erase sequences, while Host Interface Controller (HIC) handles real-time signal synchronization, supporting both linear and wrapped burst reads up to 64 bytes per transaction.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (6 mm × 8 mm, 1.0 mm or 1.2 mm height), 1 mm pitch, RoHS-compliant. Ball layout conforms to Cypress's standardized 5×5 array footprint with VSS/VSSQ power separation and RFU ball assignments per model variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous NOR flash applications.

Compared with S26KL128SDHBHI020 and MX25L12873FMI-10G, the S26KS128SDGBHN030 uniquely combines AEC-Q100 Grade 2 qualification, 1.8V DDR HyperBus performance, and hardware ECC - making it the only option for high-reliability, high-speed boot in thermally demanding automotive domains.

Availability

S26KS128SDGBHN030 is available at Aetrix Electronics and suitable for automotive ECU firmware storage, ADAS domain controller boot memory, and industrial PLC program retention requiring stable component supply across extended product lifecycles.

Supply support for S26KS128SDGBHN030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, qualified memory and microcontroller solutions for automotive, industrial, and IoT applications.

The HyperFlash™ family targets high-speed, low-pin-count boot memory for automotive and industrial systems - specifically engineered to replace parallel NOR and accelerate firmware load times via DDR HyperBus interface.

FAQ

What voltage supply does the S26KS128SDGBHN030 require?

The S26KS128SDGBHN030 requires two independent 1.8V supplies: VCC for core logic and VCCQ for I/O drivers. This separation ensures signal integrity and noise immunity in automotive environments. The device does not support 3.0V operation - using 3.0V will damage the IC. Always verify decoupling capacitor placement per Cypress AN98562 layout guidelines for S26KS128SDGBHN030.

Does the S26KS128SDGBHN030 support hardware ECC, and how is it implemented?

Yes, the S26KS128SDGBHN030 implements Hamming ECC with 1-bit correction and 2-bit detection per 16-byte half-page. ECC is automatically generated during write buffer programming and checked on every read. If enabled for two-bit detection, it reports uncorrectable errors via INT# or status register. The S26KS128SDGBHN030 stores ECC syndromes in hidden array locations - no host software overhead is required for basic correction.

What is the purpose of the PSC and PSC# pins on the S26KS128SDGBHN030?

PSC and PSC# are optional differential phase-shifted clock inputs used exclusively for DDR Center Aligned Read Strobe (DCARS) mode. When enabled, they shift RWDS timing relative to CK/CK# to center RWDS edges within the DQ valid window - improving timing margin on long or lossy PCB traces. These pins are unused during write operations and may be tied low per Cypress layout recommendations for S26KS128SDGBHN030.

How does the S26KS128SDGBHN030 handle firmware updates in automotive applications?

The S26KS128SDGBHN030 supports atomic firmware updates via its 512-byte write buffer and uniform 256-KB erase sectors. A full sector can be erased and reprogrammed without affecting adjacent sectors, enabling safe dual-bank OTA updates. Its AEC-Q100 Grade 2 qualification, 100,000 program/erase cycles, and 20-year retention ensure robustness across vehicle lifetime - critical for S26KS128SDGBHN030 deployment in ECU and ADAS systems.

Is the S26KS128SDGBHN030 pin-compatible with other HyperFlash devices like the S26KS256S or S26KS512S?

No - while the S26KS128SDGBHN030 shares the same 24-ball FBGA package and HyperBus interface definition with S26KS256S and S26KS512S, pin functions are identical but density-specific timing and internal address mapping differ. Swapping densities without firmware and timing parameter revalidation risks boot failure. The S26KS128SDGBHN030 must be used with its specific initialization sequence and AC timing parameters defined in Document 001-99198 Rev. *K.