Spansion S26KS128SDGBHV030

Overview

S26KS128SDGBHV030 from Infineon is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors with optional 4-KB parameter sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S26KS128SDGBHV030 datasheet, S26KS128SDGBHV030 pinout, S26KS128SDGBHV030 application, or S26KS128SDGBHV030 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns tACC), RWDS-synchronized DDR read alignment, sector protection granularity, deep power-down current (4 µA), and AEC-Q100 grade 3 qualification for automotive boot code storage.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and data transfer synchronization with CK/CK# and RWDS, while Embedded Algorithm Controller (EAC) executes internal program/erase sequences without host intervention. It uses MIRRORBIT™ technology for high-density NOR storage and supports both wrapped (16/32/64-byte) and linear burst modes.

HYPERBUS™ protocol enables command/address/data multiplexing over the same 8-bit DQ bus using DDR edge-aligned transfers; read data is edge-aligned to RWDS transitions, while commands are center-aligned to CK edges. Initial random access latency is configurable from 5–16 clock cycles, with 96 ns maximum access time at 166 MHz.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with S26KS128SDGBHV030, the S26KS128SDABHV020 trades bandwidth for voltage compatibility, while S26KL128SDGBHV030 sacrifices DDR performance and ECC for lower system cost-making the original optimal for new 1.8 V designs demanding maximum throughput and safety features.

Availability

S26KS128SDGBHV030 is available at Aetrix Electronics and suitable for automotive instrument clusters, industrial PLC firmware storage, medical imaging boot memory, and avionics data loggers requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for S26KS128SDGBHV030 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This device belongs to Infineon's HYPERFLASH™ family, engineered specifically for high-bandwidth, low-pin-count boot memory in automotive, industrial, and medical systems requiring deterministic read performance and functional safety compliance.

FAQ

What is the minimum supported clock frequency for S26KS128SDGBHV030?

The device supports variable clock rates down to DC (0 Hz) in active mode, with no specified minimum frequency. However, timing parameters such as tACC and tCS are guaranteed only within the rated operating range (up to 166 MHz at 1.8 V). For reliable initialization and command execution, the host must meet setup/hold times relative to CK/CK# edges regardless of frequency.

Does S26KS128SDGBHV030 require external pull-up resistors on DQ lines?

Yes - the DQ[7:0] bus is open-drain compatible and requires external pull-up resistors (typically 10 kΩ) to VCCQ (1.8 V) for proper signal termination and bus contention management during bidirectional operation. Pull-ups must be placed close to the flash device to maintain signal integrity at 166 MHz DDR rates.

How is the 512-byte program buffer utilized during write operations?

The buffer accepts up to 512 bytes of data in a single write transaction, then internally programs them in parallel across the flash array. This reduces total programming time to ~475 µs (vs. 500 µs per 2-byte word), achieving ~1 MBps effective throughput. The host must issue a "Buffer Write" command followed by address and data, then poll status until completion.

Can RWDS be used as a general-purpose output signal?

No - RWDS is strictly a read-data strobe output synchronized to internal flash timing and cannot be repurposed. Its duty cycle, phase relationship to CK, and assertion timing are fixed by the HYPERBUS™ protocol. Using it for other functions would violate timing specifications and cause read data corruption.