Infineon Technologies S26KS128SDPBHA020

Overview

S26KS128SDPBHA020 from Infineon Technologies is a 128 Mb (16 MB) HYPERFLASH™ synchronous NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting 166 MHz differential clock (CK/CK#), delivering 333 MBps sustained read throughput. It features 256-KB uniform sectors, 1-bit ECC correction / 2-bit detection, 100,000 program/erase cycles, and industrial temperature range (–40°C to +85°C), deployed in automotive infotainment boot code storage.

For engineers reviewing the S26KS128SDPBHA020 datasheet, S26KS128SDPBHA020 pinout, S26KS128SDPBHA020 application, or S26KS128SDPBHA020 equivalent, key selection criteria include HYPERBUS™ timing compliance (96 ns random access), RWDS-synchronized DDR read strobe, configurable burst length (16/32/64 bytes), deep power-down current (4 µA), and AEC-Q100 Grade 3 qualification.

Technical Context

The device implements a dual-controller architecture: Host Interface Controller (HIC) manages real-time DDR signal capture and RWDS-aligned data transfer, while Embedded Algorithm Controller (EAC) executes autonomous program/erase sequences without host intervention. It uses MIRRORBIT™ floating-gate technology for high-density NOR storage with word-wide (16-bit) addressing and 8-bit DDR data bus (DQ[7:0]).

HYPERBUS™ protocol enforces center-aligned command/address and edge-aligned read data relative to RWDS transitions; supports both wrapped (circular) and linear burst modes, with hybrid mode enabling one wrapped burst followed by linear continuation. Initial latency is 5–16 clock cycles, and random access targets 32-byte pages composed of two 16-byte half-pages.

Key Specifications

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous NOR flash applications.

Compared with CY15B104QN-SXIT and S26KL128SDPBHA020, the S26KS128SDPBHA020 uniquely balances automotive-grade reliability, 333 MBps DDR throughput, and 1.8 V low-power operation-making it optimal for next-generation ADAS and digital cockpit platforms requiring fast, robust, and energy-efficient boot memory.

Availability

S26KS128SDPBHA020 is available at Aetrix Electronics and suitable for automotive infotainment systems, ADAS domain controllers, and industrial PLCs requiring stable component supply across extended product lifecycles.

Supply support for S26KS128SDPBHA020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions.

The HYPERFLASH™ product line was designed specifically for high-bandwidth, low-pin-count boot and firmware storage in automotive and industrial real-time systems demanding AEC-Q100 qualification and deterministic timing.

FAQ

What is the purpose of the RWDS signal in S26KS128SDPBHA020?

RWDS (Read Data Strobe) is a source-synchronous output that toggles in phase with valid read data on DQ[7:0]. It is edge-aligned to data transitions and referenced to CK/CK# edges during read operations, enabling the host controller to accurately latch DDR data without requiring tight board-level timing closure. RWDS is not used during write operations.

Does S26KS128SDPBHA020 support both linear and wrapped burst modes?

Yes, the device supports configurable burst types per transaction: wrapped bursts (16/32/64 bytes), linear bursts, or hybrid mode (one wrapped burst followed by linear continuation). Burst type is selected via command register bits and determines how sequential addresses wrap within a page or advance across page boundaries during read operations.

How does the Embedded Algorithm Controller (EAC) function during programming?

The EAC autonomously executes internal program algorithms after receiving a valid 16-bit command sequence on DQ[7:0]. It manages voltage ramping, verify cycles, and pass/fail determination without host CPU involvement. The host initiates programming by writing to the 512-byte buffer, then triggers EAC execution - reducing software overhead and improving update reliability.

Is S26KS128SDPBHA020 compatible with standard SPI or QSPI interfaces?

No, it is incompatible with SPI/QSPI. S26KS128SDPBHA020 requires a HYPERBUS™-compliant master controller capable of generating differential CK/CK#, interpreting RWDS-strobed DDR data, and issuing HYPERFLASH™-specific command sequences over the shared DQ[7:0] bus. Standard SPI peripherals cannot drive or decode its protocol.