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Infineon Technologies S26KS128SDPBHI020

Part No.:
S26KS128SDPBHI020
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
24-VBGA
Datasheet:
AetrixS26KS128SDPBHI020.pdf
Description:
IC FLASH 128MBIT HYPERBUS 24FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:193

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Product details

Overview

S26KS128SDPBHI020 from Infineon Technologies is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DQ bus, and RWDS read strobe. It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package.

For engineers reviewing the S26KS128SDPBHI020 datasheet, S26KS128SDPBHI020 pinout, S26KS128SDPBHI020 application, or S26KS128SDPBHI020 equivalent, this device is selected for high-speed boot code storage in automotive ADAS ECUs, industrial PLCs requiring deterministic low-latency reads, and embedded systems needing AEC-Q100 grade 3 qualification and 20-year data retention.

Technical Context

The S26KS128SDPBHI020 implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with RWDS synchronized to CK/CK# edges during reads. Its internal MIRRORBIT™ architecture enables page-aligned 32-byte random access with 5–16 clock-cycle initial latency and configurable burst modes (wrapped: 16/32/64 bytes; linear; hybrid).

Two dedicated controllers manage operation: the Host Interface Controller (HIC) handles real-time signal timing and data transfer coordination, while the Embedded Algorithm Controller (EAC) executes non-volatile programming/erase sequences-including sector erase, buffer programming, and volatile/non-volatile sector protection-without host intervention.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density128 Mb (16 MB) - fixed capacity for compact boot image and firmware storage
Interface StandardHYPERRBUS™ DDR - 8-bit bidirectional DQ bus with differential clock (CK/CK#) and RWDS strobe
Max Read Throughput333 MBps - achieved via dual-edge 8-bit transfers at 166 MHz (1.8 V)
Random Access Time96 ns - initial latency for first word retrieval after CS# assertion
Operating Voltage1.8 V I/O, 3.0 V core - supports low-power embedded systems with mixed-voltage design
Data Retention20 years - guaranteed non-volatile data integrity under industrial temperature stress
Endurance100,000 program/erase cycles - sufficient for field firmware updates over product lifetime

Pinout & Package

Package: 24-ball FBGA (VAA024), 5 mm × 5 mm × 1.0 mm, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
CK / CK#Differential clock inputReference for DDR timing; enables precise edge-aligned sampling of DQ and RWDS
CS#Chip select (active-low)Enables device communication; must be asserted before command/address transfer
RWDSRead data strobe outputIndicates valid read data on DQ; referenced to CK/CK# transitions during read bursts
DQ[7:0]Bidirectional DDR data busCarries commands, addresses, and 16-bit data (two 8-bit transfers per clock cycle)
INT#Interrupt outputSignals Busy-to-Ready transition or ECC error detection event to host controller
RSTO#Reset outputGenerates system-level power-on reset pulse; duration user-configurable via register

Key Features

FeatureDesign Value
Configurable burst modeSupports wrapped (16/32/64 bytes), linear, or hybrid bursts - enables optimization for cache line fetch or sequential streaming
Low-power operationStandby current 25 µA (typ), Deep Power-Down 4 µA - extends battery life in always-on edge nodes
Hardware ECC engine1-bit correction / 2-bit detection per 512-byte sector - eliminates need for software ECC overhead in safety-critical boot paths
Program buffer512-byte write buffer - reduces effective programming time to ~475 µs per buffer vs. 500 µs per word
Flexible sector protectionVolatile and non-volatile lock bits per 256-KB sector - prevents accidental overwrite of critical firmware partitions

Applications

Automotive ADAS ECU Boot MemoryIndustrial PLC Firmware Storage

Use Scenario: Storing boot code and safety-critical firmware for radar processing units requiring AEC-Q100 Grade 3 compliance and <100 ms cold-boot latency.

IC Role / Device Role / Timing Role: Primary non-volatile boot memory interfaced directly to ARM Cortex-R5F MCU via HYPERBUS™ master controller.

Use Value: 333 MBps read throughput ensures full 16 MB image load in <48 ms; ECC and 20-year retention meet ISO 26262 ASIL-B requirements.

Use Scenario: Holding firmware and configuration data in modular programmable logic controllers deployed in factory automation environments with wide temperature swings.

IC Role / Device Role / Timing Role: Standalone flash memory providing deterministic read access for real-time task scheduler initialization.

Use Value: 96 ns random access and 256-KB uniform sectors enable fast parameter lookup and atomic firmware updates without runtime interruption.

Medical Imaging System Configuration Store5G Small Cell Baseband Processor Code Storage

Use Scenario: Storing calibration tables and device-specific configuration profiles in portable ultrasound machines certified to IEC 60601-1.

IC Role / Device Role / Timing Role: Non-volatile configuration memory accessed during power-up sequence by FPGA-based control subsystem.

Use Value: Deep Power-Down mode (4 µA) preserves battery charge during standby; CRC and ECC ensure integrity of life-critical calibration data.

Use Scenario: Hosting baseband processor firmware in outdoor 5G small cell radios operating at –40°C to +85°C with strict thermal management.

IC Role / Device Role / Timing Role: High-speed code execution memory mapped into ARM Cortex-A53 instruction space via AXI-HYPERBUS™ bridge.

Use Value: Linear burst mode sustains 333 MBps reads across cache-line-aligned instruction fetches, eliminating pipeline stalls in real-time PHY processing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress S26KS128SDPBHI020 (now Infineon)Same die, identical pinout and electrical specs - rebranded post-acquisitionNo functional difference; same AEC-Q100 Grade 3 qualification and HYPERBUS™ timingSelect for continuity in existing designs using legacy Cypress part numbers
Macronix MX25L12873FMI-10GQuad SPI interface (not DDR), max 104 MHz, no RWDS or differential clockLimited to lower-bandwidth applications; lacks HYPERBUS™ deterministic latency and ECC hardwareChoose only if system lacks HYPERBUS™ master IP and requires SPI compatibility

Compared with S26KS128SDPBHI020, the Cypress-branded variant offers identical performance and qualification, while the Macronix MX25L12873FMI-10G trades bandwidth and ECC for SPI simplicity - making it suitable only when HYPERBUS™ infrastructure is unavailable.

Availability

S26KS128SDPBHI020 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, and medical imaging systems requiring stable component supply, long-term lifecycle support, and AEC-Q100 Grade 3 qualification.

Supply support for S26KS128SDPBHI020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

The HYPERFLASH™ product line was developed to address the demand for high-speed, low-pin-count boot memory in safety-critical automotive and industrial systems, replacing parallel NOR and Quad SPI with deterministic DDR timing and integrated ECC.

FAQ

What is the minimum supported clock frequency for reliable operation?

The S26KS128SDPBHI020 does not specify a minimum clock frequency; it operates down to DC in all active modes. The device remains fully functional at any clock rate between 0 MHz and 166 MHz (1.8 V) or 100 MHz (3.0 V), with timing parameters scaling linearly. This allows flexible clock gating and dynamic frequency scaling in power-constrained systems without loss of functionality.

How does the RWDS signal behave during linear burst reads?

During linear burst reads, RWDS toggles synchronously with CK/CK# edges for each 8-bit data transfer on DQ[7:0], remaining active throughout the entire burst. Its rising/falling edges align precisely with valid data transitions, enabling the host to latch data reliably without additional timing margin. RWDS deasserts one half-cycle after the final data byte is driven.

Can the 4-KB parameter sectors be used for storing calibration data?

Yes - the eight optional 4-KB parameter sectors (32 KB total) are designed specifically for frequently updated calibration data, security keys, or runtime configuration. They support independent erase and protection, and retain data for 20 years at 85°C. Each sector can be locked individually using volatile or non-volatile protection bits to prevent accidental overwrite.

Is RSTO# assertion required during power-on reset sequencing?

No - RSTO# is an open-drain output that may be left unconnected if the host system provides its own reset generation. When enabled, it asserts LOW for a user-programmable duration (1–255 ms) after VCC reaches stable operating voltage, ensuring synchronous release of all downstream logic. Its use is optional but recommended for systems lacking robust external reset supervision.

S26KS128SDPBHI020 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HYPERFLASH™ KS
Package/Case:
24-VBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NOR
Memory Size:
128Mbit
Memory Organization:
16M x 8
Memory Interface:
HyperBus
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
-
Access Time:
96 ns
Voltage - Supply:
1.7V ~ 1.95V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
24-FBGA (6x8)

S26KS128SDPBHI020 FAQ

1.How can I place an order for S26KS128SDPBHI020 through Aetrix?

Please submit a Request for Quotation (RFQ) for S26KS128SDPBHI020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for S26KS128SDPBHI020 reliable?

The price and inventory of S26KS128SDPBHI020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for S26KS128SDPBHI020 is usually 5 days.

3.What payment methods are accepted for S26KS128SDPBHI020?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for S26KS128SDPBHI020 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for S26KS128SDPBHI020?

S26KS128SDPBHI020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your S26KS128SDPBHI020 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for S26KS128SDPBHI020?

For technical support, including S26KS128SDPBHI020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your S26KS128SDPBHI020 requirements.

6.How does Aetrix verify that S26KS128SDPBHI020 is sourced from the original manufacturer or authorized distributors?

All S26KS128SDPBHI020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that S26KS128SDPBHI020 meets industry standards.

7.What is the process for return or replacement of S26KS128SDPBHI020?

All S26KS128SDPBHI020 units undergo pre-shipment inspection (PSI). If there is an issue with S26KS128SDPBHI020, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The S26KS128SDPBHI020 part is unused and in its original packaging.

Return procedure for S26KS128SDPBHI020:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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