Infineon Technologies S26KS128SDPBHM020

Overview

S26KS128SDPBHM020 from Infineon Technologies is a 128 Mb (16 MB) HYPERFLASH™ NOR flash memory with HYPERBUS™ DDR interface, operating at 1.8 V I/O and supporting differential clock (CK/CK#), 8-bit DDR data bus (DQ[7:0]), and read-data strobe (RWDS). It delivers 333 MBps sustained read throughput at 166 MHz, features 256-KB uniform sectors, ECC 1-bit correction/2-bit detection, and supports industrial temperature range (–40°C to +85°C) in 24-ball FBGA package. Used in high-performance embedded boot code storage for automotive ADAS ECUs.

For engineers reviewing the S26KS128SDPBHM020 datasheet, S26KS128SDPBHM020 pinout, S26KS128SDPBHM020 application, or S26KS128SDPBHM020 equivalent, key selection criteria include DDR HYPERBUS™ timing compliance, RWDS-synchronized read latency (96 ns tACC), sector protection granularity, ECC capability, and FBGA-24 thermal/mechanical fit in space-constrained automotive modules.

Technical Context

The device implements a synchronous DDR interface where command/address and data share the 8-bit DQ bus, with dual-edge sampling referenced to CK/CK#. Its internal MIRRORBIT™ architecture enables page-aligned 32-byte random reads with 5–16 clock-cycle initial latency and configurable wrapped/linear burst modes (16/32/64 bytes).

Control logic splits into Host Interface Controller (HIC) for real-time signal management and Embedded Algorithm Controller (EAC) for autonomous program/erase execution. Power states include active clock-stop (12 mA), standby (25 µA), and deep power-down (4 µA), all requiring no wake-up sequence except deep power-down (300 µs).

Key Specifications

Pinout & Package

Package: 24-ball Fortified Ball Grid Array (FBGA), 5 mm × 5 mm × 1.0 mm body, 0.8 mm ball pitch, VAA024 footprint per Infineon datasheet Rev. *Q, Figure 10.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed NOR flash applications.

Compared with CY15B104QN-SXIT and S26KL128SDPBHM020, the S26KS128SDPBHM020 uniquely balances high-density boot storage, DDR bandwidth, and automotive-grade reliability in a 1.8 V optimized package-making it the only option meeting simultaneous requirements for fast cold boot, long-term data integrity, and space-constrained ECU layouts.

Availability

S26KS128SDPBHM020 is available at Aetrix Electronics and suitable for automotive ADAS ECUs, industrial PLCs, medical imaging systems, and avionics display units requiring stable component supply, AEC-Q100 compliance, and long-lifecycle support.

Supply support for S26KS128SDPBHM020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certifications including ISO/TS 16949.

This part belongs to the HYPERFLASH™ family, designed specifically for high-bandwidth, low-pin-count boot memory in automotive and industrial systems demanding fast, reliable, and secure firmware execution.

FAQ

What is the difference between S26KS128SDPBHM020 and S26KL128SDPBHM020?

The S26KS128SDPBHM020 operates at 1.8 V I/O with differential clock (CK/CK#) and achieves 333 MBps read throughput at 166 MHz, while the S26KL128SDPBHM020 uses 3.0 V single-ended clock and delivers 200 MBps at 100 MHz. Both share identical 128 Mb density, FBGA-24 package, and command set, but require different host interface voltage and timing design.

Does S26KS128SDPBHM020 support hardware ECC during read operations?

Yes, it provides built-in 1-bit error correction and 2-bit error detection (ECC) on every read access, with automatic correction applied transparently and INT# assertion on uncorrectable errors. ECC is always active and requires no host software intervention or additional memory overhead.

Can S26KS128SDPBHM020 be used in place of parallel NOR flash in existing designs?

No-it requires a HYPERBUS™-capable memory controller with DDR DQ, differential CK/CK#, and RWDS support. Unlike parallel NOR, it lacks dedicated address pins and uses command/address multiplexing over DQ, necessitating firmware and hardware interface redesign.

What is the purpose of the PSC and PSC# pins on S26KS128SDPBHM020?

PSC (Power Supply Control) and PSC# are inputs that manage internal voltage regulation sequencing. They coordinate safe power-up/down transitions to prevent latch-up and ensure proper core/I/O voltage ramp rates, especially critical during hot-plug or brown-out recovery in automotive systems.